摘要:
Control circuit for a data path of an S-DRAM which is clocked by a high-frequency clock signal, having a programmable mode register for storing a latency value; a latency generator for temporally delaying a data path control signal, generated by an internal sequence controller, with a switchable latency; a latency decoder, which switches the latency generator in a manner dependent on the latency value stored in the mode register, provision being made of at least one signal delay element, which can be switched in by the latency decoder and serves for the signal delay of the data path control signal with a specific delay time, the latency decoder switching in the associated signal delay element if the stored latency value is high.
摘要:
A read-write mode control method is described in which a waiting time during a reading process can be shortened by conducting a read instruction with auto-precharging in a first circuit part. The first circuit part is separate from a second circuit part used for conducting the write instruction, since a memory controller does not need to insert any wait cycles between a write instruction and an associated activate signal.
摘要:
A circuit configuration includes two signal path sections that are used to program the delay of a signal path, in particular in DRAMs. The two signal path sections have different delays and can be driven in parallel at the input end. The two signal path sections can be connected to an output terminal via a multiplexer. A selection circuit includes two signal path sections which are connected between supply voltage potentials. The selection circuit has two complimentary transistors which are connected in series and has source-end programmable elements. These transistors can be driven by complimentary control signals. This permits the delay to be programmed flexibly with little expenditure on circuitry.
摘要:
The integrated circuit has an activation decoder whose outputs are connected to the inputs of a command decoder. When an activation signal is at a first logic level, the activation decoder produces at its outputs a command supplied to it from command inputs. When the activation signal is at a second logic level, the activation decoder produces a deactivation command at its outputs irrespective of the command supplied to it from the command inputs. The command decoder does not activate any of its outputs when the deactivation command is being supplied to its inputs. The command decoder activates one of its outputs in each case when a different command is supplied to its inputs.
摘要:
An integrated memory has a first operating mode, in which, during each write access, only one of the two global amplifiers is active and transmits a datum via one of the local amplifiers to the corresponding bit line. Moreover, the memory has a second operating mode, in which, during each write access, both global amplifiers are simultaneously active and transmit a common datum via in each case at least one of the local amplifiers to the corresponding bit lines.
摘要:
The integrated memory has a column decoder for decoding column addresses and for addressing corresponding bit lines. The memory also has a first column address bus, which is used to transfer first column addresses to the column decoder, and a second column address bus, which is used to transfer second column addresses to the column decoder. The column decoder in each case addresses bit lines which correspond to the first and second column addresses supplied to it.
摘要:
The invention relates to a method for resetting at least one circuit part of an integrated circuit, in particular a synchronous semiconductor memory, in which a clock signal and a clock signal that is inverted with respect to the latter are provided in order to clock the integrated circuit, and in which, when a reset condition is present, an item of reset information is coded onto the clock signal or onto the inverted clock signal. The invention also relates to a circuit arrangement for carrying out the method according to the invention, having a clock suppression device and a decoder circuit, which is intended to extract the reset information from the clock signal or from the inverted clock signal.
摘要:
A test method suitable for testing at least one integrated circuit which, on a main area, has contact areas that serve to transfer signals during a first operating mode of the circuit. Only some of the contact areas are contact-connected to test contacts of a test apparatus and the circuit is put into a second operating mode in which the signals which are transferred via at least one of the non-contact-connected contact areas in the first operating mode are transferred via at least one of the contact-connected contact areas.
摘要:
A memory has data lines through which data connections are connected to groups of memory cells via a synchronizing unit. The synchronizing unit is disposed adjacent to the cell group and has a clock input to which an internal clock signal is fed. In the event of a write access to the memory, the synchronizing unit synchronizes with the internal clock signal data signals that are fed via the data connections and are synchronous with an external clock signal.
摘要:
An integrated memory has memory cells which are each connected to a row line to select one of the memory cells and to a column line to read or write a data signal. A row access controller is used to activate one of the row lines to select one of the memory cells and to control a precharging operation to precharge one of the row lines. A precharge command initiates a precharging operation. The precharging operation for an activated row line is triggered by the row access controller when the reading or writing of a data signal has been finished and when a defined time interval, during which the row line must at least be activated, has elapsed since the activation. As a result, a precharging operation of the activated row line is controlled in a self-adjusting manner. A method of operating an integrated memory is also provided.