Control circuit for an S-DRAM
    11.
    发明授权
    Control circuit for an S-DRAM 有权
    用于S-DRAM的控制电路

    公开(公告)号:US06717886B2

    公开(公告)日:2004-04-06

    申请号:US10248874

    申请日:2003-02-26

    IPC分类号: G11C800

    摘要: Control circuit for a data path of an S-DRAM which is clocked by a high-frequency clock signal, having a programmable mode register for storing a latency value; a latency generator for temporally delaying a data path control signal, generated by an internal sequence controller, with a switchable latency; a latency decoder, which switches the latency generator in a manner dependent on the latency value stored in the mode register, provision being made of at least one signal delay element, which can be switched in by the latency decoder and serves for the signal delay of the data path control signal with a specific delay time, the latency decoder switching in the associated signal delay element if the stored latency value is high.

    摘要翻译: 用于由具有用于存储等待时间值的可编程模式寄存器的由高频时钟信号计时的S-DRAM的数据路径的控制电路; 延迟发生器,用于以可切换的等待时间延迟由内部序列控制器产生的数据路径控制信号; 延迟解码器,其以取决于存储在模式寄存器中的等待时间值的方式切换等待时间发生器,由至少一个信号延迟元件提供,其可由等待时间解码器切换并用于信号延迟 具有特定延迟时间的数据路径控制信号,如果存储的等待时间值高,延迟解码器切换相关联的信号延迟元件。

    Method and circuit configuration for read-write mode control of a synchronous memory
    12.
    发明授权
    Method and circuit configuration for read-write mode control of a synchronous memory 有权
    用于同步存储器的读写模式控制的方法和电路配置

    公开(公告)号:US06359832B2

    公开(公告)日:2002-03-19

    申请号:US09773222

    申请日:2001-01-31

    IPC分类号: G11C800

    摘要: A read-write mode control method is described in which a waiting time during a reading process can be shortened by conducting a read instruction with auto-precharging in a first circuit part. The first circuit part is separate from a second circuit part used for conducting the write instruction, since a memory controller does not need to insert any wait cycles between a write instruction and an associated activate signal.

    摘要翻译: 描述了一种读写模式控制方法,其中可以通过在第一电路部分中进行具有自动预充电的读取指令来缩短读取处理期间的等待时间。 第一电路部分与用于执行写指令的第二电路部分分开,因为存储器控制器不需要在写指令和相关联的激活信号之间插入任何等待周期。

    Integrated circuit having a command decoder
    14.
    发明授权
    Integrated circuit having a command decoder 有权
    具有命令解码器的集成电路

    公开(公告)号:US06404699B1

    公开(公告)日:2002-06-11

    申请号:US09603742

    申请日:2000-06-26

    IPC分类号: G11C800

    摘要: The integrated circuit has an activation decoder whose outputs are connected to the inputs of a command decoder. When an activation signal is at a first logic level, the activation decoder produces at its outputs a command supplied to it from command inputs. When the activation signal is at a second logic level, the activation decoder produces a deactivation command at its outputs irrespective of the command supplied to it from the command inputs. The command decoder does not activate any of its outputs when the deactivation command is being supplied to its inputs. The command decoder activates one of its outputs in each case when a different command is supplied to its inputs.

    摘要翻译: 集成电路具有激活解码器,其输出端连接到命令解码器的输入端。 当激活信号处于第一逻辑电平时,激活解码器在其输出端产生从命令输入提供给它的命令。 当激活信号处于第二逻辑电平时,激活解码器在其输出处产生停用命令,而与从命令输入提供给其的命令无关。 当向其输入提供停用命令时,命令解码器不会激活其任何输出。 当向其输入提供不同的命令时,命令解码器在每种情况下激活其一个输出。

    Integrated memory with a block writing function and global amplifiers requiring less space
    15.
    发明授权
    Integrated memory with a block writing function and global amplifiers requiring less space 有权
    具有块写入功能的集成存储器和需要较少空间的全局放大器

    公开(公告)号:US06351419B1

    公开(公告)日:2002-02-26

    申请号:US09580986

    申请日:2000-05-30

    IPC分类号: G11C700

    CPC分类号: G11C7/18 G11C7/06

    摘要: An integrated memory has a first operating mode, in which, during each write access, only one of the two global amplifiers is active and transmits a datum via one of the local amplifiers to the corresponding bit line. Moreover, the memory has a second operating mode, in which, during each write access, both global amplifiers are simultaneously active and transmit a common datum via in each case at least one of the local amplifiers to the corresponding bit lines.

    摘要翻译: 集成存储器具有第一操作模式,其中在每个写入期间,两个全局放大器中只有一个是有源的,并且通过一个本地放大器将数据发送到对应的位线。 此外,存储器具有第二操作模式,其中在每个写入期间,两个全局放大器同时被激活,并且在每个情况下将至少一个本地放大器的公共数据通路传送到对应的位线。

    Integrated memory having column decoder for addressing corresponding bit line
    16.
    发明授权
    Integrated memory having column decoder for addressing corresponding bit line 失效
    具有用于寻址相应位线的列解码器的集成存储器

    公开(公告)号:US06188642B1

    公开(公告)日:2001-02-13

    申请号:US09348736

    申请日:1999-07-06

    IPC分类号: G11C800

    CPC分类号: G11C8/00

    摘要: The integrated memory has a column decoder for decoding column addresses and for addressing corresponding bit lines. The memory also has a first column address bus, which is used to transfer first column addresses to the column decoder, and a second column address bus, which is used to transfer second column addresses to the column decoder. The column decoder in each case addresses bit lines which correspond to the first and second column addresses supplied to it.

    摘要翻译: 集成存储器具有用于解码列地址并用于寻址对应位线的列解码器。 存储器还具有第一列地址总线,其用于将第一列地址传送到列解码器,以及第二列地址总线,其用于将第二列地址传送到列解码器。 列解码器在每种情况下都对应于提供给它的第一列地址和第二列地址的位线。

    Method and circuit arrangement for resetting an integrated circuit
    17.
    发明授权
    Method and circuit arrangement for resetting an integrated circuit 有权
    用于复位集成电路的方法和电路装置

    公开(公告)号:US07363561B2

    公开(公告)日:2008-04-22

    申请号:US11117736

    申请日:2005-04-29

    IPC分类号: G01R31/28

    CPC分类号: G06F1/24 H03K5/1534

    摘要: The invention relates to a method for resetting at least one circuit part of an integrated circuit, in particular a synchronous semiconductor memory, in which a clock signal and a clock signal that is inverted with respect to the latter are provided in order to clock the integrated circuit, and in which, when a reset condition is present, an item of reset information is coded onto the clock signal or onto the inverted clock signal. The invention also relates to a circuit arrangement for carrying out the method according to the invention, having a clock suppression device and a decoder circuit, which is intended to extract the reset information from the clock signal or from the inverted clock signal.

    摘要翻译: 本发明涉及一种用于复位集成电路,特别是同步半导体存储器的至少一个电路部分的方法,其中提供时钟信号和相对于后者反相的时钟信号,以便对集成电路 电路,并且当存在复位条件时,将复位信息的项目编码到时钟信号或反相时钟信号上。 本发明还涉及用于执行根据本发明的方法的电路装置,其具有时钟抑制装置和解码器电路,其用于从时钟信号或反相时钟信号中提取复位信息。

    Integrated circuit and method for testing it
    18.
    发明授权
    Integrated circuit and method for testing it 有权
    集成电路及其测试方法

    公开(公告)号:US06401224B1

    公开(公告)日:2002-06-04

    申请号:US09261100

    申请日:1999-03-02

    IPC分类号: G01R3128

    CPC分类号: G01R31/3185

    摘要: A test method suitable for testing at least one integrated circuit which, on a main area, has contact areas that serve to transfer signals during a first operating mode of the circuit. Only some of the contact areas are contact-connected to test contacts of a test apparatus and the circuit is put into a second operating mode in which the signals which are transferred via at least one of the non-contact-connected contact areas in the first operating mode are transferred via at least one of the contact-connected contact areas.

    摘要翻译: 一种适用于测试至少一个集成电路的测试方法,该集成电路在主区域具有用于在电路的第一操作模式期间传送信号的接触区域。 只有一些接触区域接触连接到测试装置的测试触点,并且电路进入第二操作模式,其中通过第一操作模式中的至少一个非接触连接的接触区域传送的信号 操作模式通过至少一个接触连接的接触区域传送。

    Synchronous integrated memory
    19.
    发明授权
    Synchronous integrated memory 有权
    同步集成存储器

    公开(公告)号:US06275445B1

    公开(公告)日:2001-08-14

    申请号:US09617649

    申请日:2000-07-17

    IPC分类号: G11C800

    摘要: A memory has data lines through which data connections are connected to groups of memory cells via a synchronizing unit. The synchronizing unit is disposed adjacent to the cell group and has a clock input to which an internal clock signal is fed. In the event of a write access to the memory, the synchronizing unit synchronizes with the internal clock signal data signals that are fed via the data connections and are synchronous with an external clock signal.

    摘要翻译: 存储器具有数据线,数据连接经由同步单元连接到存储器单元组。 同步单元被布置成与单元组相邻并且具有被馈送内部时钟信号的时钟输入。 在对存储器进行写访问的情况下,同步单元与经由数据连接馈送的内部时钟信号数据信号同步,并与外部时钟信号同步。

    Integrated memory with row access control to activate and precharge row lines, and method of operating such a memory
    20.
    发明授权
    Integrated memory with row access control to activate and precharge row lines, and method of operating such a memory 有权
    具有行访问控制的集成存储器,用于激活和预充行行,以及操作这种存储器的方法

    公开(公告)号:US06396755B2

    公开(公告)日:2002-05-28

    申请号:US09864978

    申请日:2001-05-24

    IPC分类号: G11C700

    CPC分类号: G11C8/00

    摘要: An integrated memory has memory cells which are each connected to a row line to select one of the memory cells and to a column line to read or write a data signal. A row access controller is used to activate one of the row lines to select one of the memory cells and to control a precharging operation to precharge one of the row lines. A precharge command initiates a precharging operation. The precharging operation for an activated row line is triggered by the row access controller when the reading or writing of a data signal has been finished and when a defined time interval, during which the row line must at least be activated, has elapsed since the activation. As a result, a precharging operation of the activated row line is controlled in a self-adjusting manner. A method of operating an integrated memory is also provided.

    摘要翻译: 集成存储器具有各自连接到行线的存储单元,以选择存储器单元之一和列线来读取或写入数据信号。 行访问控制器用于激活行行之一以选择存储器单元之一并且控制预充电操作以对行行之一进行预充电。 预充电命令启动预充电操作。 激活的行线的预充电操作在数据信号的读取或写入已经完成时由行存取控制器触发,并且当激活行至少必须被激活的定义的时间间隔已经过去时 。 结果,以自动调节的方式控制激活的行线的预充电操作。 还提供了一种操作集成存储器的方法。