Stacked DRAM device and method of manufacture

    公开(公告)号:US11227639B2

    公开(公告)日:2022-01-18

    申请号:US17135138

    申请日:2020-12-28

    Applicant: Rambus Inc.

    Inventor: Thomas Vogelsang

    Abstract: A memory device includes a first dynamic random access memory (DRAM) integrated circuit (IC) chip including first memory core circuitry, and first input/output (I/O) circuitry. A second DRAM IC chip is stacked vertically with the first DRAM IC chip. The second DRAM IC chip includes second memory core circuitry, and second I/O circuitry. Solely one of the first DRAM IC chip or the second DRAM IC chip includes a conductive path that electrically couples at least one of the first memory core circuitry or the second memory core circuitry to solely one of the first I/O circuitry or the second I/O circuitry, respectively.

    Reduced transport energy in a memory system

    公开(公告)号:US10706913B2

    公开(公告)日:2020-07-07

    申请号:US16261937

    申请日:2019-01-30

    Applicant: Rambus Inc.

    Abstract: A memory stack comprises at least two memory components. The memory components have a first data link interface and are to transmit signals on a data link coupled to the first data link interface at a first voltage level. A buffer component has a second data link interface coupled to the data link. The buffer component is to receive signals on the second data link interface at the first voltage level. A level shifting latch produces a second voltage level in response to receiving the signals at the second data link interface, where the second voltage level is higher than the first voltage level.

    Fractional-readout oversampled image sensor

    公开(公告)号:US10659715B2

    公开(公告)日:2020-05-19

    申请号:US16503391

    申请日:2019-07-03

    Applicant: Rambus Inc.

    Abstract: Signals representative of total photocharge integrated within respective image-sensor pixels are read out of the pixels after a first exposure interval that constitutes a first fraction of a frame interval. Signals in excess of a threshold level are read out of the pixels after an ensuing second exposure interval that constitutes a second fraction of the frame interval, leaving residual photocharge within the pixels. After a third exposure interval that constitutes a third fraction of the frame interval, signals representative of a combination of at least the residual photocharge and photocharge integrated within the pixels during the third exposure interval are read out of the pixels.

    Systems and Methods for Improving Resolution in Lensless Imaging

    公开(公告)号:US20170230575A1

    公开(公告)日:2017-08-10

    申请号:US15423892

    申请日:2017-02-03

    Applicant: Rambus Inc.

    CPC classification number: G02B5/1871 G02B5/1842 H04N5/335

    Abstract: An imaging device uses a grating to produce an interference pattern for capture by a photodetector array. Digital photographs and other image information can then be extracted from the pattern. An integrated processor locally supports this extraction by upsampling the captured interference pattern and deconvolving the upsampled pattern with an image-calculation parameter set that represents the grating at a resolution greater than that provided by the photodetector array. Deconvolving the upsampled pattern with a high-resolution parameter increases the resolution of extracted image information.

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