公开(公告)号：US10222677B2

公开(公告)日：2019-03-05

申请号：US15833990

申请日：2017-12-06

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Amit Singh Nagra ,  Pradeep Srinivasan ,  Haydn Frederick Jones ,  Andrew George Rickman ,  Aaron John Zilkie

IPC: G02F1/225 ,  H01L31/0232 ,  H01L31/0312 ,  H01L31/0304 ,  H01L31/11 ,  G02F1/21

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

公开(公告)号：US20180101082A1

公开(公告)日：2018-04-12

申请号：US15833990

申请日：2017-12-06

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Amit Singh Nagra ,  Pradeep Srinivasan ,  Haydn Frederick Jones ,  Andrew George Rickman ,  Aaron John Zilkie

IPC: G02F1/225 ,  H01L31/0232 ,  H01L31/0312 ,  H01L31/0304 ,  H01L31/11

CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F2001/212 ,  G02F2201/12 ,  G02F2202/10 ,  G02F2202/101 ,  H01L31/02327 ,  H01L31/03048 ,  H01L31/0312 ,  H01L31/1105 ,  Y02E10/544

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

公开(公告)号：US20230277062A1

公开(公告)日：2023-09-07

申请号：US18019085

申请日：2021-08-02

Applicant: Rockley Photonics Limited

Inventor： Cristiano Dalvi ,  Sean Merritt ,  Hooman Abediasl ,  Jeffrey Driscoll ,  Alexander Gondarenko ,  Richard Grote ,  Seiran Petikian ,  David Arlo Nelson

IPC: A61B5/00

CPC classification number: A61B5/0059 ,  A61B5/6802 ,  A61B2562/028

Abstract: A sensor system for diffuse reflectance tissue monitoring, the sensor system comprising: one or more integrated photonic silicon or silicon nitride broadband transceiver circuits for multi-wavelength diffuse reflectance tissue monitoring, wherein the one or more transceiver circuits includes a transmitter photonic integrated circuit (PIC), the transmitter PIC comprising an optical phased array (OP A) the OP A comprising a steering mechanism to steer transmitted light across the tissue.

公开(公告)号：US11036006B2

公开(公告)日：2021-06-15

申请号：US16465538

申请日：2017-12-01

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Damiana Lerose ,  Hooman Abediasl ,  Amit Singh Nagra

IPC: G02B6/14 ,  G02B6/122 ,  G02F1/025 ,  G02B6/134 ,  G02B6/12

Abstract: A waveguide device and method of doping a waveguide device, the waveguide device comprising a rib waveguide region, the rib waveguide region having: a base, and a ridge extending from the base, wherein: the base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; a first doped slab region extends along the first slab region; a second doped slab region extends along the second slab region; a first doped sidewall region extends along a first sidewall of the ridge and along a portion of the first slab, the first doped sidewall region being in contact with the first doped slab region at a first slab interface; and a second doped sidewall region extends along a second sidewall of the ridge and along a portion of the second slab, the second doped sidewall region being in contact with the second doped slab region at a second slab interface; and wherein the separation between the first sidewall of the ridge and the first slab interface is no more than 10 μm; and wherein the separation between the second sidewall of the ridge and the second slab interface is no more than 10 μm.

公开(公告)号：US10955692B2

公开(公告)日：2021-03-23

申请号：US15321723

申请日：2016-11-10

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Kevin Masuda ,  Andrea Trita ,  Aaron Zilkie

IPC: G02F1/025 ,  G02F1/015 ,  G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02F1/17 ,  G02F1/21 ,  G02B6/12

Abstract: An optoelectronic component including a waveguide, the waveguide comprising an optically active region (OAR), the OAR having an upper and a lower surface; a lower doped region, wherein the lower doped region is located at and/or adjacent to at least a portion of a lower surface of the OAR, and extends laterally outwards from the OAR in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of an upper surface of the OAR, and extends laterally outwards from the OAR in a second direction; and an intrinsic region located between the lower doped region and the upper doped region.

公开(公告)号：US20190278111A1

公开(公告)日：2019-09-12

申请号：US16420096

申请日：2019-05-22

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Amit Singh Nagra ,  Pradeep Srinivasan ,  Haydn Jones

IPC: G02F1/01 ,  H01L21/78 ,  H01L27/30 ,  G02B6/13 ,  G02F1/225 ,  G02B6/136 ,  G01J1/04

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

公开(公告)号：US20190258094A1

公开(公告)日：2019-08-22

申请号：US16281035

申请日：2019-02-20

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Dong Yoon Oh ,  Hooman Abediasl ,  Gerald Cois Byrd ,  Karlheinz Muth ,  Yi Zhang ,  Aaron John Zilkie

IPC: G02F1/025

Abstract: An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 μm away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.

公开(公告)号：US20190011799A1

公开(公告)日：2019-01-10

申请号：US15700055

申请日：2017-09-08

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Amit Singh Nagra ,  Pradeep Srinivasan ,  Haydn Frederick Jones

IPC: G02F1/225 ,  G02B6/136 ,  G02B6/13

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; a regrown cladding layer, on top of the substrate; and an optically active region, above the regrown cladding layer; wherein the regrown cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the optoelectronic device is confined to the optically active region, and wherein the optically active region is formed of: SiGeSn, GeSn, InGaNAs, or InGaNAsSb.

公开(公告)号：US11815748B2

公开(公告)日：2023-11-14

申请号：US17540782

申请日：2021-12-02

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： James Dongyoon Oh ,  Hooman Abediasl ,  Gerald Cois Byrd ,  Karlheinz Muth ,  Yi Zhang ,  Aaron John Zilkie

IPC: G02F1/01 ,  G02F1/035 ,  G02F1/295 ,  G02B6/10 ,  G02F1/025 ,  G02F1/015

CPC classification number: G02F1/025 ,  G02F1/0157 ,  G02F2201/063 ,  G02F2203/21

Abstract: An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 μm away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.

公开(公告)号：US11735679B2

公开(公告)日：2023-08-22

申请号：US17059088

申请日：2019-05-29

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Yi Zhang ,  Hooman Abediasl ,  Aaron John Zilkie

IPC: H01L31/101 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18 ,  H01L31/105

CPC classification number: H01L31/1013 ,  H01L31/028 ,  H01L31/02327 ,  H01L31/1804 ,  H01L31/105

Abstract: A silicon based photodetector and method of manufacturing the same are provided. The photodetector comprising: a silicon substrate; a buried oxide layer, above the silicon substrate; and a waveguide, above the buried oxide layer. The waveguide includes a silicon, Si, containing region and a germanium tin, GeSn, containing region, both located between a first doped region and a second doped region of the waveguide, thereby forming a PIN diode. The first doped region and the second doped region are respectively connected to first and second electrodes, such that the waveguide is operable as a photodetector.