公开(公告)号：US20160242292A1

公开(公告)日：2016-08-18

申请号：US15015870

申请日：2016-02-04

Applicant: ROHM CO., LTD.

Inventor： Isamu NISHIMURA ,  Hideaki YANAGIDA ,  Michihiko MIFUJI ,  Yasuhiro FUWA

IPC: H05K1/18 ,  H05K1/11

CPC classification number: H05K1/183 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2924/15156 ,  H01L2924/181 ,  H05K1/0306 ,  H05K1/111 ,  H05K1/112 ,  H05K1/186 ,  H05K2201/0162 ,  H05K2201/0376 ,  H05K2201/09036 ,  H01L2924/00012

Abstract: An electronic device includes a semiconductor substrate, an electronic element mounted on the substrate, a conductive layer electrically connected to the electronic element, a sealing resin and a columnar conductor. The substrate has a recess formed in its obverse surface. The electronic element is mounted on the bottom surface of the recess. The conductive layer has an obverse-surface contacting region located on the obverse surface of the substrate. The sealing resin is disposed in at least a part of the recess for covering at least a part of the obverse surface of the substrate. The columnar conductor is electrically connected to the obverse-surface contacting region of the conductive layer and exposed from the sealing resin at a side opposite to the obverse surface of the substrate.

Abstract translation: 电子设备包括半导体衬底，安装在衬底上的电子元件，与电子元件电连接的导电层，密封树脂和柱状导体。 基板具有在其正面形成的凹部。 电子元件安装在凹槽的底面上。 导电层具有位于基板的正面上的正面接触区域。 密封树脂设置在用于覆盖基板的正面的至少一部分的凹部的至少一部分中。 柱状导体与导电层的正面接触区域电连接，并且在密封树脂的与基板的正面相反的一侧露出。

公开(公告)号：US20230317608A1

公开(公告)日：2023-10-05

申请号：US18327232

申请日：2023-06-01

Applicant: ROHM CO., LTD.

Inventor： Hideaki YANAGIDA ,  Yoshihisa TAKADA

IPC: H01L23/528 ,  H01L23/532 ,  H01L23/00

CPC classification number: H01L23/5283 ,  H01L23/53233 ,  H01L23/53261 ,  H01L24/20

Abstract: A terminal includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer that is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

公开(公告)号：US20210167254A1

公开(公告)日：2021-06-03

申请号：US17266008

申请日：2019-07-26

Applicant: ROHM CO., LTD.

Inventor： Kazuisao TSURUDA ,  Jaeyoung KIM ,  Hideaki YANAGIDA ,  Toshikazu MUKAI

IPC: H01L33/48 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62

Abstract: A terahertz device includes a terahertz element, a sealing resin, a wiring layer and a frame-shaped member. The terahertz element that performs conversion between terahertz waves and electric energy. The terahertz element has an element front surface and an element back surface spaced apart from each other in a first direction. The sealing resin covers the terahertz element. The wiring layer is electrically connected to the terahertz element. A frame-shaped member is made of a conductive material and arranged around the terahertz element as viewed in the first direction. The frame-shaped member has a reflective surface capable of reflecting the terahertz waves.

公开(公告)号：US20190164906A1

公开(公告)日：2019-05-30

申请号：US16202345

申请日：2018-11-28

Applicant: ROHM CO., LTD.

Inventor： Hideaki YANAGIDA

IPC: H01L23/552 ,  H01L23/13 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device includes an electroconductive shielding layer, an isolation layer formed with a frame-shaped opening, a wiring layer on the isolation layer to be surrounded by the opening, a semiconductor element on the wiring layer with its back surface facing the wiring layer, electroconductive pillars spaced apart from the semiconductor element and standing on the wiring layer, and an electroconductive frame standing on an exposed region of the shielding layer through the opening, with the frame surrounding the semiconductor element and the electroconductive pillars. The semiconductor device further includes an electrically insulating sealing resin that covers the wiring layer and the semiconductor element, and the frame is configured to be electrically connected to an external ground terminal.