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公开(公告)号:US20220328407A1
公开(公告)日:2022-10-13
申请号:US17851313
申请日:2022-06-28
Applicant: ROHM CO., LTD.
Inventor: Hideaki YANAGIDA , Yoshihisa TAKADA
IPC: H01L23/528 , H01L23/532 , H01L23/00
Abstract: There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.
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公开(公告)号:US20170098625A1
公开(公告)日:2017-04-06
申请号:US15379437
申请日:2016-12-14
Applicant: ROHM CO., LTD.
Inventor: Hirofumi TAKEDA , Yoshihisa TAKADA
IPC: H01L25/065 , H01L23/13 , H01L23/00 , H01L23/31 , H01L23/498 , H01L25/00 , H01L23/14
CPC classification number: H01L25/0652 , G01C17/30 , H01L23/13 , H01L23/147 , H01L23/24 , H01L23/3121 , H01L23/49811 , H01L23/552 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/97 , H01L25/065 , H01L25/0657 , H01L25/50 , H01L2224/11618 , H01L2224/11825 , H01L2224/11826 , H01L2224/131 , H01L2224/1319 , H01L2224/13566 , H01L2224/13583 , H01L2224/13647 , H01L2224/13666 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/81011 , H01L2224/81191 , H01L2224/81192 , H01L2224/81447 , H01L2224/81815 , H01L2224/81907 , H01L2224/97 , H01L2225/06517 , H01L2225/06524 , H01L2225/06548 , H01L2225/06551 , H01L2225/06555 , H01L2225/06568 , H01L2225/06582 , H01L2225/06586 , H01L2924/10158 , H01L2924/15156 , H01L2924/15157 , H01L2924/15321 , H01L2924/19102 , H01L2924/19105 , H01L2924/3512 , H01L2924/014 , H01L2924/0665 , H01L2924/00014 , H01L2224/81 , H01L2924/00012
Abstract: A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (1D) includes, a substrate (100D), which includes a main surface (101D) and a recess (108D) depressed from the main surface (101D), and includes a semiconductor material; a wiring layer (200D) in which at least a portion thereof is formed on the substrate (100D); one or more first elements (370D) accommodated in the recess (108D); a sealing resin (400D) covering at least a portion of the one or more first elements (370D) and filled in the recess (108D); and a plurality of columnar conductive portions (230D) penetrating through the sealing resin (400D) in the depth direction of the recess (108D), and respectively connected with the portion of the wiring layer (200D) that is formed at the recess (108D).
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公开(公告)号:US20230091632A1
公开(公告)日:2023-03-23
申请号:US17816826
申请日:2022-08-02
Applicant: ROHM CO., LTD.
Inventor: Satoshi KAGEYAMA , Hiroyuki SHINKAI , Yoshihisa TAKADA , Natsuki SAKAMOTO
IPC: H01L23/00 , H01L23/498 , H01L21/48 , H01L21/56
Abstract: A semiconductor device includes: a resin layer having a resin main surface; a mounting wiring layer arranged on the resin main surface, and having a mounting wiring main surface facing the same side as the resin main surface and a mounting wiring back surface facing the side of the resin main surface; a semiconductor element including an element wiring layer which is mounted on the mounting wiring main surface, has an element wiring main surface facing the side of the resin layer, and is connected to the mounting wiring layer; and a sealing resin which seals the mounting wiring layer and the semiconductor element, wherein the mounting wiring main surface and the element wiring main surface are rough surfaces having a larger surface roughness than the mounting wiring back surface.
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公开(公告)号:US20210035889A1
公开(公告)日:2021-02-04
申请号:US16939502
申请日:2020-07-27
Applicant: ROHM CO., LTD.
Inventor: Satoshi KAGEYAMA , Yoshihisa TAKADA
IPC: H01L23/488 , H01L23/00 , H01L23/04 , H01L23/12
Abstract: There is provided a semiconductor device that includes a wiring layer having a main surface and a rear surface which face opposite sides in a thickness direction, a first insulating layer covering an entirety of the rear surface, a second insulating layer which is in contact with the main surface, a semiconductor element which faces the second insulating layer and is mounted on the wiring layer, and a sealing resin which is in contact with the second insulating layer and covers the semiconductor element, wherein surface roughness of the main surface is larger than surface roughness of the rear surface.
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公开(公告)号:US20230317608A1
公开(公告)日:2023-10-05
申请号:US18327232
申请日:2023-06-01
Applicant: ROHM CO., LTD.
Inventor: Hideaki YANAGIDA , Yoshihisa TAKADA
IPC: H01L23/528 , H01L23/532 , H01L23/00
CPC classification number: H01L23/5283 , H01L23/53233 , H01L23/53261 , H01L24/20
Abstract: A terminal includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer that is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.
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公开(公告)号:US20160027756A1
公开(公告)日:2016-01-28
申请号:US14807868
申请日:2015-07-23
Applicant: ROHM CO., LTD.
Inventor: Hirofumi TAKEDA , Yoshihisa TAKADA
CPC classification number: H01L25/0652 , G01C17/30 , H01L23/13 , H01L23/147 , H01L23/24 , H01L23/3121 , H01L23/49811 , H01L23/552 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/97 , H01L25/065 , H01L25/0657 , H01L25/50 , H01L2224/11618 , H01L2224/11825 , H01L2224/11826 , H01L2224/131 , H01L2224/1319 , H01L2224/13566 , H01L2224/13583 , H01L2224/13647 , H01L2224/13666 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/81011 , H01L2224/81191 , H01L2224/81192 , H01L2224/81447 , H01L2224/81815 , H01L2224/81907 , H01L2224/97 , H01L2225/06517 , H01L2225/06524 , H01L2225/06548 , H01L2225/06551 , H01L2225/06555 , H01L2225/06568 , H01L2225/06582 , H01L2225/06586 , H01L2924/10158 , H01L2924/15156 , H01L2924/15157 , H01L2924/15321 , H01L2924/19102 , H01L2924/19105 , H01L2924/3512 , H01L2924/014 , H01L2924/0665 , H01L2924/00014 , H01L2224/81 , H01L2924/00012
Abstract: A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (1D) includes, a substrate (100D), which includes a main surface (101D) and a recess (108D) depressed from the main surface (101D), and includes a semiconductor material; a wiring layer (200D) in which at least a portion thereof is formed on the substrate (100D); one or more first elements (370D) accommodated in the recess (108D); a sealing resin (400D) covering at least a portion of the one or more first elements (370D) and filled in the recess (108D); and a plurality of columnar conductive portions (230D) penetrating through the sealing resin (400D) in the depth direction of the recess (108D), and respectively connected with the portion of the wiring layer (200D) that is formed at the recess (108D).
Abstract translation: 提供半导体器件。 可以以降低的成本制造半导体器件。 半导体器件(1D)包括:衬底(100D),其包括从主表面(101D)凹陷的主表面(101D)和凹部(108D),并且包括半导体材料; 布线层(200D),其中至少一部分形成在所述基板(100D)上; 容纳在所述凹部(108D)中的一个或多个第一元件(370D); 覆盖所述一个或多个第一元件(370D)的至少一部分并填充在所述凹部(108D)中的密封树脂(400D); 以及在所述凹部(108D)的深度方向上穿过所述密封树脂(400D)的多个柱状导电部(230D),分别与形成在所述凹部(108D)的所述布线层(200D)的部分连接 )。
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公开(公告)号:US20220352105A1
公开(公告)日:2022-11-03
申请号:US17765265
申请日:2020-09-29
Applicant: ROHM CO., LTD.
Inventor: Isamu NISHIMURA , Hiroyuki SHINKAI , Yoshihisa TAKADA , Hideaki YANAGIDA , Hirofumi TAKEDA
IPC: H01L23/00 , H01L23/498 , H01L23/31 , H01L21/48 , H01L25/16
Abstract: A semiconductor device includes a substrate, a wire portion, a bonding portion, a semiconductor element, and an encapsulation resin. The substrate includes substrate main and back surfaces facing in opposite directions. The wire portion includes a conductive layer formed on the substrate main surface. The bonding portion includes a first plated layer formed on an upper surface of the wire portion and a first solder layer formed on an upper surface of the first plated layer. The semiconductor element includes an element main surface facing the substrate main surface, an element electrode formed on the element main surface, and a second plated layer formed on a lower surface of the element electrode and bonded to the first solder layer. The encapsulation resin covers the semiconductor element. The bonding portion is larger than the element electrode as viewed in a thickness-wise direction that is perpendicular to the substrate main surface.
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公开(公告)号:US20210098374A1
公开(公告)日:2021-04-01
申请号:US17003124
申请日:2020-08-26
Applicant: ROHM CO., LTD.
Inventor: Hideaki YANAGIDA , Yoshihisa TAKADA
IPC: H01L23/528 , H01L23/00 , H01L23/532
Abstract: There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.
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