公开(公告)号：US07122485B1

公开(公告)日：2006-10-17

申请号：US10316987

申请日：2002-12-09

申请人： George D. Papasouliotis ,  Edith Goldner ,  Vishal Gauri ,  Md Sazzadur Rahman ,  Vikram Singh

发明人： George D. Papasouliotis ,  Edith Goldner ,  Vishal Gauri ,  Md Sazzadur Rahman ,  Vikram Singh

IPC分类号： H01L21/31

CPC分类号： C23C16/401 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

摘要： Disclosed are methods for modifying the topography of HDP CVD films by modifying the composition of the reactive mixture. The methods allow for deposition profile control independent of film deposition rate. They rely on changes in the process chemistry of the HDP CVD system, rather than hardware modifications, to modify the local deposition rates on the wafer. The invention provides methods of modifying the film profile by altering the composition of the reactive gas mixture, in particular the hydrogen content. In this manner, deposition profile and wiw uniformity are decoupled from deposition rate, and can be controlled without hardware modifications.

摘要翻译： 公开了通过改变反应性混合物的组成来改变HDP CVD膜的形貌的方法。 该方法允许独立于膜沉积速率的沉积轮廓控制。 它们依赖于HDP CVD系统的工艺化学变化，而不是硬件修改，以修改晶片上的局部沉积速率。 本发明提供了通过改变反应气体混合物的组成，特别是氢含量来改变膜分布的方法。 以这种方式，沉积轮廓和均匀性与沉积速率分离，并且可以在没有硬件修改的情况下被控制。

公开(公告)号：US07067440B1

公开(公告)日：2006-06-27

申请号：US10890655

申请日：2004-07-13

申请人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasouliotis ,  Vikram Singh

发明人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasouliotis ,  Vikram Singh

IPC分类号： H01L21/00

CPC分类号： C23C16/401 ,  C23C16/045

摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

公开(公告)号：US06846745B1

公开(公告)日：2005-01-25

申请号：US10058897

申请日：2002-01-28

申请人： George D. Papasouliotis ,  Vishal Gauri ,  Raihan M. Tarafdar ,  Vikram Singh

发明人： George D. Papasouliotis ,  Vishal Gauri ,  Raihan M. Tarafdar ,  Vikram Singh

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/762 ,  H01L21/322 ,  H01L21/26 ,  H01L21/302 ,  H01L21/31

CPC分类号： H01L21/3144 ,  C23C16/045 ,  C23C16/402 ,  H01J2237/3327 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76224

摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of both hydrogen and fluorine as process gases in the reactive mixture of a plasma-containing CVD reactor. The process gas also includes dielectric forming precursors such as silicon and oxygen-containing molecules.

摘要翻译： 使用化学气相沉积方法来填充高纵横比（通常至少3:1），窄宽度（通常为1.5微米或更小甚至0.15微米以下）间隙，空隙或弱点的发生率显着降低。 该沉积工艺涉及在含等离子体CVD反应器的反应混合物中使用氢和氟作为工艺气体。 工艺气体还包括电介质形成前体，例如硅和含氧分子。

公开(公告)号：US06867086B1

公开(公告)日：2005-03-15

申请号：US10389164

申请日：2003-03-13

申请人： David Chen ,  Robert A. Shepherd, Jr. ,  Vishal Gauri ,  George D. Papasouliotis

发明人： David Chen ,  Robert A. Shepherd, Jr. ,  Vishal Gauri ,  George D. Papasouliotis

IPC分类号： C23C16/04 ,  C23C16/40 ,  H01L21/311 ,  H01L21/316 ,  H01L21/762 ,  H01L21/338 ,  H01L21/31 ,  H01L21/336 ,  H01L21/76 ,  H01L21/439

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76224

摘要： High density plasma chemical vapor deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots are provided. This deposition part of the process may involve the use of any suitable high density plasma chemical vapor deposition (HDP CVD) chemistry. The etch back part of the process involves an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality gap fill operations.

摘要翻译： 高密度等离子体化学气相沉积和回蚀工艺，其可以填充高纵横比（通常至少5:1，例如6:1），窄宽度（通常小于0.13微米，例如0.1微米或更小）的间隙，显着降低 提供了空隙或弱点的发生。 该方法的该沉积部分可以涉及使用任何合适的高密度等离子体化学气相沉积（HDP CVD）化学。 该方法的回蚀部分涉及包括各向异性干蚀刻以及各向同性干法蚀刻的集成多步骤（例如两步）程序。 在单一工具中的全部干沉积和回蚀工艺增加了生产量并减少了晶片的处理，从而产生了更有效和更高质量的间隙填充操作。

公开(公告)号：US06596654B1

公开(公告)日：2003-07-22

申请号：US09996619

申请日：2001-11-28

申请人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasoulitotis ,  Vikram Singh

发明人： Atiye Bayman ,  Md Sazzadur Rahman ,  Weijie Zhang ,  Bart van Schravendijk ,  Vishal Gauri ,  George D. Papasoulitotis ,  Vikram Singh

IPC分类号： H01L2131

CPC分类号： H01L21/02129 ,  C23C16/045 ,  C23C16/402 ,  H01J2237/3327 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76224

摘要： Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

摘要翻译： 使用化学气相沉积方法来填充高纵横比（通常至少3:1），窄宽度（通常为1.5微米或更小甚至0.15微米以下）间隙，空隙或弱点的发生率显着降低。 该沉积工艺涉及在含等离子体CVD反应器的反应混合物中使用氢作为工艺气体。 工艺气体还包括电介质形成前体分子，例如硅和含氧分子。

公开(公告)号：US06592804B1

公开(公告)日：2003-07-15

申请号：US09583667

申请日：2000-05-30

申请人： Vishal Gauri

发明人： Vishal Gauri

IPC分类号： B29D2300

CPC分类号： H01J9/247 ,  B28B1/24 ,  B28B3/006 ,  H01J61/30

摘要： A method and apparatus for forming a green ceramic arc tube for a metal halide lamp. A feedstock material comprising ceramic and a binder is prepared and injected into an inner cavity of a mold. The inner cavity of the mold has an inner surface that corresponds to a desired outer shape of a body of the ceramic arc tube. A fluid is injected into the feedstock material to create a cavity in the feedstock material and to force the feedstock material into contact with the inner surface of the mold. The mold is then separated from the formed ceramic green arc tube.

摘要翻译： 一种用于形成金属卤化物灯的绿色陶瓷电弧管的方法和装置。 制备包含陶瓷和粘合剂的原料，并注入模具的内腔。 模具的内腔具有对应于陶瓷电弧管的主体的期望的外部形状的内表面。 流体被注入到原料材料中以在原料材料中形成空腔并且迫使原料与模具的内表面接触。 然后将模具与形成的陶瓷绿色电弧管分离。

公开(公告)号：US06592695B1

公开(公告)日：2003-07-15

申请号：US09714635

申请日：2000-11-16

申请人： Daniel L. Polis ,  David Dudik ,  Vishal Gauri

发明人： Daniel L. Polis ,  David Dudik ,  Vishal Gauri

IPC分类号： B32B3126

CPC分类号： B22F1/0077 ,  B22F2998/00 ,  C04B35/634 ,  C04B35/63492

摘要： A binder system for forming a ceramic body, such as a translucent arc tube for a metal halide lamp, comprises a hydrocarbon, such as a paraffin wax, a copolymer, such as poly (ethylene-co-vinyl acetate), and optionally a surfactant. The binder system is mixed with a ceramic powder and heated to above the melting point of the binder. The heated mixture is formed into a compact having the general shape of the finished ceramic body and then cooled or allowed to cool. The hydrocarbon and copolymer have overlapping freezing points so that when the shaped compact cools, crystalline segments of the copolymer (such as ethylene segments) co-crystallize with the hydrocarbon, while amorphous segments (such as vinyl acetate) form bridges between the crystalline regions. As a result, the cooled compact has improved green strength over conventional binder systems.

摘要翻译： 用于形成陶瓷体的粘合剂体系，例如用于金属卤化物灯的半透明电弧管，包括烃，例如石蜡，共聚物如聚（乙烯 - 共 - 乙酸乙烯酯）和任选的表面活性剂 。 将粘合剂体系与陶瓷粉末混合并加热到粘合剂的熔点以上。 将加热的混合物形成具有成品陶瓷体的总体形状的紧凑件，然后冷却或允许冷却。 烃和共聚物具有重叠的凝固点，使得当成形的压块冷却时，共聚物的结晶段（例如乙烯段）与烃共结晶，而无定形区段（例如乙酸乙烯酯）在结晶区域之间形成桥。 结果，与常规粘合剂体系相比，冷却的压块具有改善的生坯强度。