公开(公告)号：US20050106498A1

公开(公告)日：2005-05-19

申请号：US10964200

申请日：2004-10-12

申请人： Heidi Cao ,  Robert Meagley

发明人： Heidi Cao ,  Robert Meagley

IPC分类号： G03C1/492 ,  G03C1/76 ,  G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/109 ,  Y10S430/111 ,  Y10S522/914

摘要： By using a branched long chained chain scission polymer as a photoresist for EUV and 157 nanometer applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.

公开(公告)号：US20050074981A1

公开(公告)日：2005-04-07

申请号：US10679793

申请日：2003-10-06

申请人： Robert Meagley ,  Michael Goodner

发明人： Robert Meagley ,  Michael Goodner

IPC分类号： G03F7/40 ,  H01L21/027 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/0273 ,  G03F7/40

摘要： Materials may be utilized as photoresists which have relatively plasma poor etch resistance. Examples include acrylates and fluorinated polymers, which have very good transparency but poor etch resistance. Materials with relatively poor etch resistance may be first applied to the semiconductor wafer and patterned. After they have been patterned, their etch resistance may be improved. For example, the etch resistance may be improved by applying an absorbate which may be cross-linked or polymerized to increase the etch resistance of the already patterned material. Thereafter, the material with the improved etch resistance may be used as an etching mask.

摘要翻译： 可以将材料用作具有相对等离子体不良耐蚀刻性的光致抗蚀剂。 实例包括丙烯酸酯和氟化聚合物，其具有非常好的透明度，但耐腐蚀性差。 可以首先将具有相对差的耐蚀刻性的材料施加到半导体晶片并进行图案化。 在它们被图案化之后，可以提高其耐蚀刻性。 例如，可以通过施加可以被交联或聚合的吸收材料来提高耐蚀刻性以提高已经图案化的材料的耐蚀刻性。 此后，可以使用具有改善的耐蚀刻性的材料作为蚀刻掩模。

公开(公告)号：US20070154836A1

公开(公告)日：2007-07-05

申请号：US11323612

申请日：2005-12-30

申请人： Robert Meagley

发明人： Robert Meagley

IPC分类号： G03C1/00

CPC分类号： G03F7/0382 ,  G03F7/0392

摘要： A helical pixilated photoresist includes a photoacid generator, a photoimageable polymer comprising a self-assembly moiety and a solubility switch, the photoimageable polymer having a helical structure. In one embodiment the helical pixilated photoresist is formed of a photoimageable polymer comprising a pyridine-based quencher copolymer and a solubility switch copolymer, wherein the photoimageable polymer has a helical structure formed by pi-stacking of the pyridine-based quencher copolymer. The helical pixilated photoresist is applied to a substrate and irradiated and developed to form a patterned photoresist.

摘要翻译： 螺旋像素化光致抗蚀剂包括光酸产生剂，包含自组装部分的可光成像聚合物和溶解度开关，所述可光成像聚合物具有螺旋结构。 在一个实施方案中，螺旋像素化光致抗蚀剂由包含基于吡啶的猝灭剂共聚物和溶解度开关共聚物的可光成像聚合物形成，其中可光成像聚合物具有通过吡啶类猝灭剂共聚物的pi层叠形成的螺旋结构。 将螺旋像差光致抗蚀剂施加到基底上并照射和显影以形成图案化的光致抗蚀剂。

公开(公告)号：US20060166132A1

公开(公告)日：2006-07-27

申请号：US11045197

申请日：2005-01-27

申请人： Robert Meagley

发明人： Robert Meagley

IPC分类号： G03C1/76

CPC分类号： G03F7/0382 ,  G03F7/0047 ,  G03F7/0392

摘要： The transparency of photoresist films to ultraviolet light may be increased without sacrificing photospeed or resolution of the photoresist by including ultraviolet light transparent nanoparticles to the photoresist formulations. The ultraviolet light transparent nanoparticles may be included in the photoresist formulations as filler to “dilute” the ultraviolet light opacity of the photoresist, as side-chains to the photoimageable species that form the photoresist matrix, or as the photoimageable species themselves that form the backbone of the photoresist matrix. The photoresist formulation may also be a hybrid solution of any of these variations on the inclusion of the ultraviolet light transparent nanoparticles. The ultraviolet light transparent nanoparticles may mostly contain carbon or silicon.

摘要翻译： 可以增加光致抗蚀剂膜对紫外光的透明度，而不会通过将紫外光透明纳米粒子包括在光致抗蚀剂制剂上而牺牲光刻胶的光速或分辨率。 紫外光透明纳米颗粒可以包含在光致抗蚀剂制剂中作为填料，以“稀释”光致抗蚀剂的紫外光不透明度，作为形成光致抗蚀剂基质的可光成像物质的侧链，或者形成主链的可光成像物质本身 的光致抗蚀剂基质。 光致抗蚀剂制剂也可以是任何这些变化对包含紫外光透明纳米颗粒的混合溶液。 紫外光透明纳米粒子主要含有碳或硅。

公开(公告)号：US20060063394A1

公开(公告)日：2006-03-23

申请号：US10947820

申请日：2004-09-22

申请人： Michael McSwiney ,  Huey-Chiang Liou ,  Michael Goodner ,  Robert Leet ,  Robert Meagley

发明人： Michael McSwiney ,  Huey-Chiang Liou ,  Michael Goodner ,  Robert Leet ,  Robert Meagley

IPC分类号： H01L21/31

CPC分类号： H01L21/02222 ,  C23C16/22 ,  H01L21/02123 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/3125 ,  H01L21/3185

摘要： A method including introducing a precursor in the presence of a circuit substrate, and forming a film including a reaction product of the precursor on the substrate, wherein the precursor includes a molecule comprising a primary species of the film and a modifier. A method including introducing a precursor in the presence of a circuit substrate, the precursor including a primary species and a film modifier as a single source, and forming a film on the circuit substrate. An apparatus including a semiconductor substrate, and a film on a surface of the semiconductor substrate, the film including a reaction product of a precursor including a molecule comprising a primary species and a modifier.

公开(公告)号：US20050227094A1

公开(公告)日：2005-10-13

申请号：US11147909

申请日：2005-06-07

申请人： Grant Kloster ,  Robert Meagley ,  Michael Goodner ,  Kevin O'brien ,  Don Bruner

发明人： Grant Kloster ,  Robert Meagley ,  Michael Goodner ,  Kevin O'brien ,  Don Bruner

IPC分类号： B32B3/26 ,  B32B9/04

CPC分类号： B32B3/26 ,  B32B2310/12 ,  B32B2457/00 ,  H01L21/76814 ,  Y10T428/249953 ,  Y10T428/249978 ,  Y10T428/249993 ,  Y10T428/31663

摘要： Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may be sealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.

公开(公告)号：US20050138992A1

公开(公告)日：2005-06-30

申请号：US10750199

申请日：2003-12-30

申请人： Hok-Kin Choi ,  Robert Meagley

发明人： Hok-Kin Choi ,  Robert Meagley

IPC分类号： G01N30/02 ,  H01L21/768 ,  G01N30/00

CPC分类号： H01L21/76808 ,  G01N30/02 ,  G01N2030/027

摘要： Numerous embodiments of a method to assay sacrificial material are disclosed. In one embodiment, a sacrificial material may be analyzed by high performance liquid chromatography. Chemical markers that correlate with material contaminants in the sacrificial material may be identified.

摘要翻译： 公开了用于测定牺牲材料的方法的许多实施例。 在一个实施方案中，可以通过高效液相色谱分析牺牲材料。 可以鉴定与牺牲材料中的材料污染物相关的化学标记。

公开(公告)号：US20050124152A1

公开(公告)日：2005-06-09

申请号：US10985510

申请日：2004-11-10

申请人： Robert Meagley ,  Michael Goodner

发明人： Robert Meagley ,  Michael Goodner

IPC分类号： H01L21/31 ,  H01L21/311 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L29/02 ,  H01L47/00

CPC分类号： H01L21/76808

摘要： A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix with filler material mixed therein. The filler material may be particulate matter that may be used to modify one or more properties of the composite sacrificial material during semiconductor processing.

摘要翻译： 复合牺牲材料沉积在半导体衬底上的电介质层的空隙或开口中。 复合牺牲材料包括其中混合有填料的聚合物或低聚物基质。 填充材料可以是可以用于在半导体加工期间修饰复合牺牲材料的一种或多种性质的颗粒物质。

公开(公告)号：US20050084794A1

公开(公告)日：2005-04-21

申请号：US10688109

申请日：2003-10-16

申请人： Robert Meagley ,  Ernisse Putna ,  Wang Yueh

发明人： Robert Meagley ,  Ernisse Putna ,  Wang Yueh

IPC分类号： G03C1/76 ,  G03F7/039 ,  G03F7/20

CPC分类号： G03F7/2041 ,  G03F7/0392

摘要： Embodiments of the invention provide methods and compositions for providing photoresists with improved liquid-contact properties. For one embodiment of the invention, a photoresist is provided having one or more constituent components that are resistant to diffusion between the photoresist and an index-matching liquid (IML). For such an embodiment in which the IML is water, a photoresist component is provided that is hydrophobic thus reducing diffusion between the photoresist and the water. In various alternative embodiments of the invention, a photoresist is provided having one or more constituent components that encourage diffusion between the photoresist layer and the IML in such manner as to impart beneficial liquid-contact properties to the photoresist layer. For such an embodiment in which the IML is water, a photoresist is provided having one or more hydrophilic constituents.

摘要翻译： 本发明的实施方案提供了提供具有改进的液体接触性能的光致抗蚀剂的方法和组合物。 对于本发明的一个实施例，提供具有一个或多个阻挡光致抗蚀剂和折射率匹配液体（IML）之间的扩散的组成成分的光致抗蚀剂。 对于其中IML为水的这种实施方案，提供了疏水性的光致抗蚀剂组分，从而减少光致抗蚀剂和水之间的扩散。 在本发明的各种替代实施例中，提供具有一种或多种构成组分的光致抗蚀剂，其以促使光致抗蚀剂层有益的液体接触性质的方式促进光致抗蚀剂层和IML之间的扩散。 对于其中IML为水的这种实施方案，提供具有一种或多种亲水组分的光致抗蚀剂。

公开(公告)号：US20050070096A1

公开(公告)日：2005-03-31

申请号：US10676294

申请日：2003-09-30

申请人： Reza Golzarian ,  Robert Meagley ,  Seiichi Morimoto ,  Mansour Moinpour

发明人： Reza Golzarian ,  Robert Meagley ,  Seiichi Morimoto ,  Mansour Moinpour

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76843 ,  H01L21/76849 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions. Finally, the unidirectional conductive material may have properties tending to reduce metal diffusion, reduce electron migration, provide adhesion or bonding, and/or act as an etch stop.

摘要翻译： 描述了一种形成方法和包括具有单向导电材料的互连结构的器件。 单向导电材料可以覆盖互连材料，和/或可以围绕互连材料，例如通过衬套沟槽和通孔的壁和底座。 单向导电材料可以被配置为在对应于与接触点的突出物相对应的方向上导电，并且覆盖在单向导电材料上方的导电材料，但是在其它方向上没有实质的导电性。 此外，单向导电材料可以在垂直于其形成的表面的方向或沿着或跨平面的方向上导电，但在其它方向上不具有实质的导电性。 最后，单向导电材料可能具有倾向于减少金属扩散，减少电子迁移，提供粘附或粘结和/或用作蚀刻停止的性质。