公开(公告)号：US20070105383A1

公开(公告)日：2007-05-10

申请号：US11620516

申请日：2007-01-05

申请人： Robert Meagley ,  Heidi Cao ,  Kevin O'Brien

发明人： Robert Meagley ,  Heidi Cao ,  Kevin O'Brien

IPC分类号： H01L21/302

CPC分类号： G03F7/091 ,  G03F7/0045

摘要： A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.

摘要翻译： 有助于减少半导体工艺效应的半导体工艺技术，例如不期望的线边缘粗糙度，光刻分辨率不足以及与去除光致抗蚀剂层相关的有限的焦深问题。 更具体地，本发明的实施例使用光致酸产生剂（PAG）材料结合牺牲光吸收材料（SLAM）来帮助减少在半导体制造过程中与去除光致抗蚀剂有关的这些和其它不期望的影响。 此外，本发明的实施例允许PAG以有效的方式应用于半导体制造过程中，与典型的现有技术相比需要较少的处理操作。

公开(公告)号：US20070032675A1

公开(公告)日：2007-02-08

申请号：US11580399

申请日：2006-10-13

申请人： Robert Meagley ,  Michael Goodner ,  Andrew Ott ,  Grant Kloster ,  Michael McSwiney ,  Bob Leet

发明人： Robert Meagley ,  Michael Goodner ,  Andrew Ott ,  Grant Kloster ,  Michael McSwiney ,  Bob Leet

IPC分类号： C04B41/50 ,  C07F7/02

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633

摘要： In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.

摘要翻译： 在一个实施方案中，本发明包括将含有烃取代基的前体和任选的第二常规或含烃前体引入气相沉积设备中; 以及在所述气相沉积设备内的所述前体上形成具有所述烃取代基的介电层。 在某些实施方案中，至少一部分烃取代基可以稍后从介电层去除以降低其密度。

公开(公告)号：US20060216634A1

公开(公告)日：2006-09-28

申请号：US11087181

申请日：2005-03-22

申请人： Robert Meagley ,  Heidi Cao ,  Kevin O'Brien

发明人： Robert Meagley ,  Heidi Cao ,  Kevin O'Brien

IPC分类号： G03C1/00

CPC分类号： G03F7/091 ,  G03F7/0045

摘要： A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.

摘要翻译： 有助于减少半导体工艺效应的半导体工艺技术，例如不期望的线边缘粗糙度，光刻分辨率不足以及与去除光致抗蚀剂层相关的有限的焦深问题。 更具体地，本发明的实施例使用光致酸产生剂（PAG）材料结合牺牲光吸收材料（SLAM）来帮助减少在半导体制造过程中与去除光致抗蚀剂有关的这些和其它不期望的影响。 此外，本发明的实施例允许PAG以有效的方式应用于半导体制造过程中，与典型的现有技术相比需要较少的处理操作。

公开(公告)号：US20060205221A1

公开(公告)日：2006-09-14

申请号：US11417615

申请日：2006-05-03

申请人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

发明人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

IPC分类号： H01L21/465

CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/76802

摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.

公开(公告)号：US20060183348A1

公开(公告)日：2006-08-17

申请号：US11060843

申请日：2005-02-17

申请人： Robert Meagley ,  Michael Leeson ,  Michael Goodner ,  Bob Leet ,  Michael McSwiney ,  Shan Clark

发明人： Robert Meagley ,  Michael Leeson ,  Michael Goodner ,  Bob Leet ,  Michael McSwiney ,  Shan Clark

IPC分类号： H01L21/31

CPC分类号： H01L21/76808 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/76822 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835

摘要： Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.

摘要翻译： 集成电路处理中的多层膜可以通过在半导体衬底上形成的单一组合物的相分离来形成。 然后将组合物诱导相分离成至少第一连续相和第二连续相。 组合物可以由相分离成不同连续层的两种或多种组分形成。 组合物还可以是单一组分，其在活化时分解成两个或多个相分离成不同连续层的组分。 相分离可用于形成例如牺牲光吸收材料（SLAM）和显影剂抗性皮肤，介电层和硬掩模，光致抗蚀剂和抗反射涂层（ARC），应力缓冲涂层和 衬底封装上的保护层，以及光干涉层。

公开(公告)号：US07029723B2

公开(公告)日：2006-04-18

申请号：US10337524

申请日：2003-01-07

申请人： Tian-An Chen ,  Robert Meagley ,  Kevin P. O'Brien ,  Michael D. Goodner ,  James Powers

发明人： Tian-An Chen ,  Robert Meagley ,  Kevin P. O'Brien ,  Michael D. Goodner ,  James Powers

IPC分类号： C23C16/38 ,  C23C16/28

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/312 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/30 ,  H01L2924/00

摘要： Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.

摘要翻译： 碳硼烷可用作前体以形成低介电常数电介质。 可以修饰碳硼烷材料以使其能够通过化学气相沉积沉积。

公开(公告)号：US20080220380A1

公开(公告)日：2008-09-11

申请号：US12075703

申请日：2008-03-13

申请人： Robert Bristol ,  Heidi Cao ,  Manish Chandhok ,  Robert Meagley ,  Vijayakumar S. Ramachandrarao

发明人： Robert Bristol ,  Heidi Cao ,  Manish Chandhok ,  Robert Meagley ,  Vijayakumar S. Ramachandrarao

IPC分类号： G03F7/20

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/093 ,  G03F7/11 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/3007 ,  G03F7/38

摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.

公开(公告)号：US20060046206A1

公开(公告)日：2006-03-02

申请号：US10927885

申请日：2004-08-27

申请人： Robert Meagley ,  Michael McSwiney ,  Michael Goodner ,  Robert Leet ,  Manish Chandhok

发明人： Robert Meagley ,  Michael McSwiney ,  Michael Goodner ,  Robert Leet ,  Manish Chandhok

IPC分类号： G03F7/00

CPC分类号： G03F7/40

摘要： A cap may be formed anisotropically over a photoresist feature. For example, a material, such as a polymer, may be coated over the photoresist feature. If the coated material is photoactive, the cap may be grown preferentially in the vertical direction, creating high aspect ratio structures in some embodiments of the present invention.

公开(公告)号：US20050239281A1

公开(公告)日：2005-10-27

申请号：US10829592

申请日：2004-04-21

申请人： Michael Goodner ,  Kevin O'Brien ,  Grant Kloster ,  Robert Meagley

发明人： Michael Goodner ,  Kevin O'Brien ,  Grant Kloster ,  Robert Meagley

IPC分类号： H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/76808 ,  H01L21/76825 ,  H01L21/76831

摘要： The invention provides a layer of photosensitive material that may be directly patterned. The photosensitive material may then be decomposed to leave voids or air gaps in the layer. This may provide a low dielectric constant layer with reduced resistance capacitance delay characteristics.

摘要翻译： 本发明提供可以直接图案化的感光材料层。 然后可以将感光材料分解以留下该层中的空隙或气隙。 这可以提供具有降低的电阻电容延迟特性的低介电常数层。

公开(公告)号：US20050164502A1

公开(公告)日：2005-07-28

申请号：US10763467

申请日：2004-01-22

申请人： Hai Deng ,  Yueh Wang ,  Huey-Chiang Liou ,  Hok-Kin Choi ,  Robert Meagley ,  Ernisse Putna

发明人： Hai Deng ,  Yueh Wang ,  Huey-Chiang Liou ,  Hok-Kin Choi ,  Robert Meagley ,  Ernisse Putna

IPC分类号： G03F7/20 ,  H01L21/302 ,  H01L21/461

CPC分类号： G03F7/2041 ,  G03F7/70341

摘要： Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.

摘要翻译： 用于浸没液体材料和相关浸没光刻系统和技术的组合物。 与水和一些其它常用的浸液相比，基于聚合物或低聚物的浸渍液体的实例被描述为具有优异的浸渍光刻材料性能。 此外，某些材料添加剂可以添加到水和水基浸液中以改善浸没式光刻中的浸液的性能。