-
公开(公告)号：US06820197B2
公开(公告)日：2004-11-16
申请号：US10000690
申请日：2001-11-15
申请人： Alexander Benedix , Georg Braun , Bernd Klehn
发明人： Alexander Benedix , Georg Braun , Bernd Klehn
IPC分类号： G06F15177
CPC分类号： G06F9/4411 , G06F15/177
摘要： The data processing system has configurable components, which each have a configuration register for storing configuration data. A serial bus couples the configuration registers to a non-volatile memory so that a serial transmission of data from the non-volatile memory to the configuration registers is made possible, for example when the system is booted up. The system already functions even if complex bus systems, such as extensively parallel high-speed buses, for example, are not yet available in a configuration process of the system. The system can be used in all data processing systems, in particular in mobile applications.
摘要翻译： 数据处理系统具有可配置的组件，每个组件具有用于存储配置数据的配置寄存器。 串行总线将配置寄存器耦合到非易失性存储器，使得可以例如当系统启动时将数据从非易失性存储器串行传输到配置寄存器。 即使在系统的配置过程中，诸如广泛并行的高速总线之类的复杂总线系统尚不可用，该系统也已经起作用。 该系统可用于所有数据处理系统，特别是在移动应用中。
-
12.发明授权公开(公告)号：US06738309B2
公开(公告)日：2004-05-18
申请号：US10154597
申请日：2002-05-23
IPC分类号： G11C800
CPC分类号： G11C7/1066 , G11C7/1051 , G11C7/22 , G11C7/222
摘要： A semiconductor memory is described which has a clock input, a signal input, a data output, a measuring device, a control circuit, and a latency. The latency elapses between the activation of the signal input and the availability of the data to be read at the data output. A clock signal is fed to the clock input. On the basis of the clock signal, the measuring device determines a value for the latency and the control circuit configures the semiconductor memory with the determined value for the operation of the semiconductor memory.
摘要翻译： 描述了具有时钟输入，信号输入，数据输出，测量装置，控制电路和等待时间的半导体存储器。 在信号输入的激活和在数据输出端要读取的数据的可用性之间经过了延迟。 时钟信号被馈送到时钟输入。 基于时钟信号，测量装置确定延迟的值，并且控制电路以半导体存储器的操作的确定值配置半导体存储器。
-
公开(公告)号：US06665228B2
公开(公告)日：2003-12-16
申请号：US10166962
申请日：2002-06-11
IPC分类号： G11C800
CPC分类号： G11C11/4087 , G11C8/14
摘要： An integrated memory has a memory cell array, which is subdivided into a plurality of separate segments. A first and a second local word line in different segments together form a common global word line. The global word line is decoded via a row decoder. The first and second local word lines are connected to a column decoder in such a way that they can be decoded individually and segment by segment in a manner dependent on a column address. The memory thus allows fast and current-saving activation of a word line.
-
公开(公告)号：US07127553B2
公开(公告)日：2006-10-24
申请号：US10717337
申请日：2003-11-19
申请人： Alexander Benedix , Georg Braun , Bernd Klehn
发明人： Alexander Benedix , Georg Braun , Bernd Klehn
IPC分类号： H01L27/108
CPC分类号： G06F11/3409
摘要： A configuration for executing data processing processes has an operating system and various system resources that are accessed by the operating system using an access strategy for the execution of system processes. When there are different applications, different access strategies to the system resources are used. A method is also provided for determining the optimum access strategy to the system resources.
摘要翻译： 用于执行数据处理过程的配置具有由操作系统使用用于执行系统进程的访问策略来访问的操作系统和各种系统资源。 当有不同的应用程序时，使用与系统资源不同的访问策略。 还提供了一种用于确定对系统资源的最佳访问策略的方法。
-
15.发明授权Method for storing data in a memory device with the possibility of access to redundant memory cells 有权将数据存储在具有访问冗余存储单元的可能性的存储器件中的方法公开(公告)号：US06819606B2
公开(公告)日：2004-11-16
申请号：US10339031
申请日：2003-01-09
IPC分类号： G11C700
CPC分类号： G11C29/70
摘要： A method is provided for storing data in a memory device having memory cells arranged in memory cell rows and memory cell columns. The method can include a step for providing redundant memory cells in the memory device. The method can also include a step for localizing defective cells. Further, the method can include a step of accessing the redundant memory cells by means of a predeterminable access mode. The method can also include a step of bypassing defective memory cells of the memory device in a manner dependent on the predeterminable access mode during operation of the memory device for accessing redundant memory cells and for replacement by redundant memory cells. Further, the method can include a step for providing redundant memory cells for storing additional information describing a defect correction.
摘要翻译： 提供了一种用于将数据存储在具有布置在存储单元行和存储单元列中的存储单元的存储器件中的方法。 该方法可以包括在存储器件中提供冗余存储器单元的步骤。 该方法还可以包括用于定位缺陷单元的步骤。 此外，该方法可以包括通过可预定访问模式访问冗余存储器单元的步骤。 该方法还可以包括在存储器设备的操作期间以取决于可预定访问模式的方式绕过存储器件的有缺陷的存储单元的步骤，用于访问冗余存储器单元并由冗余存储器单元替换。 此外，该方法可以包括用于提供用于存储描述缺陷校正的附加信息的冗余存储器单元的步骤。
-
16.发明申请公开(公告)号：US20050248994A1
公开(公告)日：2005-11-10
申请号：US11132419
申请日：2005-05-19
CPC分类号： H04N21/2182 , G11C7/1018 , G11C7/103 , H04N21/23116 , H04N21/2312 , H04N21/2323
摘要： A memory system for network broadcasting applications, such as video/audio applications, has at least one memory which is divided into a plurality of addressable memory units, which have a respective dedicated output for interchanging data. The inputs of a matrix switch are connected to a respective output of a different memory unit. The matrix switch is operated such that a plurality of the memory units are connected to its output in a sequential order. A first sequence of memory units and a second sequence of memory units are connected to its output independently. This results in a memory system, which can handle a number of requests to the same memory at staggered times. The interaction of the individual memory units with the matrix switch allows a high data throughput and a short access time.
摘要翻译： 用于诸如视频/音频应用的网络广播应用的存储器系统具有至少一个存储器，其被分成多个可寻址存储器单元，其具有用于交换数据的相应的专用输出。 矩阵开关的输入端连接到不同存储器单元的相应输出端。 矩阵开关的操作使得多个存储器单元以其顺序连接到其输出。 存储单元的第一序列和第二存储单元序列独立地连接到其输出。 这导致存储器系统，其可以以交错的时间处理对相同存储器的多个请求。 单个存储器单元与矩阵开关的交互允许高数据吞吐量和短的访问时间。
-
17.发明授权Method for integrating imperfect semiconductor memory devices in data processing apparatus 有权在数据处理装置中集成不完美的半导体存储器件的方法公开(公告)号：US06762965B2
公开(公告)日：2004-07-13
申请号：US10254694
申请日：2002-09-25
IPC分类号： G11C700
CPC分类号： G11C29/76 , G11C29/88 , G11C29/883
摘要： A method for integrating imperfect semiconductor memory devices having functional and defective memory cells into a data processing apparatus. The defective memory cells are assigned defect addresses or defect address ranges. Before a memory access of the data processing apparatus is carried out, the address of the memory access is compared with the defect addresses or defect address ranges and is recoded in the event of correspondence.
摘要翻译： 一种用于将具有功能和缺陷存储器单元的不完美半导体存储器件集成到数据处理装置中的方法。 缺陷存储单元被分配缺陷地址或缺陷地址范围。 在执行数据处理装置的存储器访问之前，将存储器访问的地址与缺陷地址或缺陷地址范围进行比较，并且在对应的情况下被重新编码。
-
18.发明授权公开(公告)号：US06806121B2
公开(公告)日：2004-10-19
申请号：US10285090
申请日：2002-10-31
IPC分类号： H01L2144
CPC分类号： H01L21/76838 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to an interconnect structure for an integrated circuit (1) having a first interconnect (B1; B1′; B1″), which is composed of a plurality of interconnect sections (A11-A16; A11′-A16′; A11″-A14″) lying in a first and a second interconnect plane (M0, M1); and a second interconnect (B2; B2′; B2″), which runs adjacent to the first interconnect (B1; B1′; B1″) and which is composed of a plurality of interconnect sections (A21-A25; A21′-A25′; A21″-A23″) lying in the first and second interconnect planes (M0, M1); the first and second interconnects (B1; B1′; B1″; B2; B2′; B2″) being offset with respect to one another in the longitudinal direction in such a way that the interconnect sections (A12, A14, A16; A12′, A14′, A16′; A12″, A14″) of the first interconnect (B1; B1′; B1″) which lie in the first interconnect plane (M0) run at least in sections beside the interconnect sections (A22, A24; A22′; A24′; A21″, A23″) of the second interconnect (B2; B2′; B2″) which lie in the second interconnection plane (M1), and that the interconnect sections (A11, A13, A15; A11′, A13′, A15′; A11″, A13″) of the first interconnect (B1; B1′; B1″) which lie in the second interconnect plane (M1) run at least in sections beside the interconnect sections (A21, A23, A25; A21′, A23′, A25′; A22″) of the second interconnect (B2; B2′; B2″) which lie in the first interconnect plane (M0). The invention also provides a corresponding fabrication method.
摘要翻译： 本发明涉及具有第一互连（B1; B1'; B1“）的集成电路（1）的互连结构，其由多个互连部分（A11-A16; A11'-A16'）组成; A11“-A14”），位于第一和第二互连平面（M0，M1）中; 和与第一互连（B1; B1'; B1“）相邻的第二互连（B2; B2'; B2”），它们由多个互连部分（A21-A25; A21'- A25“; A21”-A23“），位于第一和第二互连平面（M0，M1）中; 第一和第二互连（B1; B1'; B1“; B2; B2'; B2”）在纵向方向上彼此偏移，使得互连部分（A12，A14，A16; 位于第一互连平面（M0）中的第一互连（B1; B1'; B1“）的A12'，A14'，A16'; A12”，A14“）至少在互连部分旁边 位于第二互连平面（M1）中的第二互连（B2; B2'; B2“）的位置（A22，A24; A22'; A24'; A21”，A23“）， A11，A13，A
-
公开(公告)号：US06738304B2
公开(公告)日：2004-05-18
申请号：US10283992
申请日：2002-10-30
IPC分类号： G11C700
CPC分类号： G11C11/406
摘要： According to one embodiment, a dynamic memory is provided. The dynamic memory can include a memory matrix having a plurality of memory cells arranged in rows and columns. The memory cells in a row can be connected by in each case one of a plurality of word lines. The memory cells in a column can be connected by in each case one of a plurality of bit lines. The dynamic memory can also include a sense amplifier for reading data from the memory cells via the plurality of bit lines. Further, the dynamic memory can include a row address decoder and a column address decoder for generating memory-internal address in a manner dependent on a memory-external address signal. The dynamic memory can also include a sequence control device for cyclically generating refresh addresses for carrying for carrying out a refresh operation of the memory cells.
摘要翻译： 根据一个实施例，提供动态存储器。 动态存储器可以包括具有以行和列排列的多个存储器单元的存储器矩阵。 在每种情况下，可以连接多行字线中的一行中的存储单元。 列中的存储单元可以在每种情况下连接多个位线中的一个。 动态存储器还可以包括用于经由多个位线从存储器单元读取数据的读出放大器。 此外，动态存储器可以包括行地址解码器和用于以取决于存储器 - 外部地址信号的方式产生存储器内部地址的列地址解码器。 动态存储器还可以包括用于循环产生刷新地址以执行对存储器单元进行刷新操作的序列控制装置。
-
公开(公告)号：US06635947B2
公开(公告)日：2003-10-21
申请号：US09934979
申请日：2001-08-21
申请人： Alexander Benedix , Georg Braun , Helmut Fischer , Bernd Klehn , Sebastian Kuhne
发明人： Alexander Benedix , Georg Braun , Helmut Fischer , Bernd Klehn , Sebastian Kuhne
IPC分类号： H01L2900
摘要： A monolithically integrable inductor containing a layer sequence of conductive layers and insulating layers that are stacked mutually alternately above one another is described. The conductive layers are configured in such a way that they form a coil-type structure around a central region, in which giant magnetic resistance materials can be provided.
-
-
-
-
-
-
-
-
-
搜索结果
21 条记录 (耗时 0.018 秒)
