公开(公告)号：US20250159946A1

公开(公告)日：2025-05-15

申请号：US18811194

申请日：2024-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Baekwon PARK ,  Keunwook SHIN ,  Changhyun KIM ,  Minsu SEOL ,  Joungeun YOO ,  Hyunmi LEE

IPC: H01L29/76 ,  H01L21/02 ,  H01L21/443 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device may include a gate electrode, a metal nitride layer on the gate electrode, a gate insulating film on the metal nitride layer, a channel on the gate insulating film, a source electrode in one side of the channel, and a drain electrode in another side of the channel.

公开(公告)号：US20240038664A1

公开(公告)日：2024-02-01

申请号：US18486574

申请日：2023-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joungeun YOO ,  Youngjae KANG ,  Duseop YOON

IPC: H01L23/532 ,  C22C29/14

CPC classification number: H01L23/53209 ,  H01L23/53257 ,  C22C29/14 ,  B22F2302/35

Abstract: Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.

公开(公告)号：US20190165336A1

公开(公告)日：2019-05-30

申请号：US16204304

申请日：2018-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Ki KIM ,  Kyeong PANG ,  In KIM ,  Feifei FANG ,  Joungeun YOO ,  Ginam KIM ,  In Su LEE

IPC: H01M2/02 ,  H01M2/04 ,  H01M6/46 ,  H01M10/0525 ,  C08G63/60 ,  C08G69/44 ,  C09K19/38

Abstract: A battery case comprising a container configured to house an electrode assembly, wherein the container comprises a bottom wall and a plurality of side walls, the bottom wall and the plurality of side walls are integrated to define an internal space for housing the electrode assembly and to further define a top opening on an opposing side from the bottom wall, at least one of the bottom wall and the plurality of side walls comprises a liquid crystal polymer, the liquid crystal polymer comprises a plurality of blocks comprising an average of about 2 to about 5 structural units derived from hydroxybenzoic acid, and the container has a water vapor transmission rate at a wall thickness of 1 mm of less than about 0.07 g/m2/day, as measured at 38° C. and a relative humidity of 100% according to ISO 15106 and ASTM F1249.

公开(公告)号：US20170059755A1

公开(公告)日：2017-03-02

申请号：US15242862

申请日：2016-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joungeun YOO ,  Dmitry ANDROSOV ,  Changki KIM ,  Kitae PARK

IPC: G02B5/30 ,  C08J5/18 ,  C08G73/10 ,  C07C211/51 ,  C07C229/60

CPC classification number: G02B5/305 ,  C07C211/51 ,  C07C229/60 ,  C08G73/10 ,  C08G73/1007 ,  C08G73/1039 ,  C08G73/1042 ,  C08G73/1046 ,  C08G73/1053 ,  C08G73/1082 ,  C08J5/18 ,  C08J2379/08

Abstract: A monomer represented by Chemical Formula 1-1 wherein in Chemical Formula 1-1, Z, L1, L2, R1 to R6, n, m, p, and a to f are the same as defined in the detailed description.

Abstract translation: 其中，在化学式1-1中，Z，L1，L2，R1〜R6，n，m，p，a〜f与详细说明中的定义相同。

公开(公告)号：US20240047564A1

公开(公告)日：2024-02-08

申请号：US18321290

申请日：2023-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joungeun YOO ,  Changhyun Kim ,  Kyung-Eun Byun ,  Minsu Seol ,  Keunwook Shin ,  Eunkyu Lee

IPC: H01L29/76 ,  H01L29/24

CPC classification number: H01L29/7606 ,  H01L29/24

Abstract: A semiconductor device may include a channel layer including a two-dimensional (2D) semiconductor material, a gate insulating layer on a center portion of the channel layer, a gate electrode on the gate insulating layer, and a first conductive layer and a second conductive layer respectively contacting opposite sides of the channel layer. Each of the first and second conductive layers may include metal boride.

公开(公告)号：US20230343709A1

公开(公告)日：2023-10-26

申请号：US18342145

申请日：2023-06-27

Applicant: Samsung Electronics Co., Ltd. ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

Inventor： Youngjae KANG ,  SangWoon LEE ,  Joungeun YOO ,  Duseop YOON

IPC: H01L23/532 ,  H01L21/285 ,  H01L23/528 ,  H01L29/45

CPC classification number: H01L23/53204 ,  H01L21/2855 ,  H01L23/5283 ,  H01L29/45

Abstract: A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 µΩ·cm:








M

n+1




AX

n





­­­Formula 1







In Formula 1, M, A, X, and n are as described in the specification.

公开(公告)号：US20230238329A1

公开(公告)日：2023-07-27

申请号：US18158233

申请日：2023-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Sangwon KIM ,  Kyung-Eun BYUN ,  Joungeun YOO ,  Eunkyu LEE ,  Changseok LEE ,  Alum JUNG

IPC: H01L23/532 ,  H01L23/528

CPC classification number: H01L23/53276 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242

Abstract: An interconnect structure may include a dielectric layer including a trench, a conductive wiring including graphene filling an inside of the trench, and a liner layer in contact with at least one surface of the conductive wiring and including a metal.

公开(公告)号：US20220068824A1

公开(公告)日：2022-03-03

申请号：US17376624

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joungeun YOO ,  Youngjae KANG ,  Duseop YOON

IPC: H01L23/532

Abstract: Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.

公开(公告)号：US20190162888A1

公开(公告)日：2019-05-30

申请号：US16265205

申请日：2019-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joungeun YOO ,  Dmitry ANDROSOV ,  Changki KIM ,  Kitae PARK

IPC: G02B5/30 ,  C08G73/10 ,  C07C211/51 ,  C07C229/60 ,  C08J5/18

Abstract: A monomer represented by Chemical Formula 1-1 wherein in Chemical Formula 1-1, Z, L1, L2, R1 to R6, n, m, p, and a to f are the same as defined in the detailed description.

公开(公告)号：US20170183286A1

公开(公告)日：2017-06-29

申请号：US15392507

申请日：2016-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dmitry ANDROSOV ,  Joungeun YOO ,  Ju Hyun KIM ,  Eun Sung LEE ,  Changki KIM ,  Hyunseok CHOI

IPC: C07C65/21 ,  G02B5/30 ,  C09D135/02 ,  C09K19/38 ,  C07C235/64 ,  C08F122/20

CPC classification number: C07C65/21 ,  C07C235/64 ,  C08F122/20 ,  C09D135/02 ,  C09K19/18 ,  C09K19/2014 ,  C09K19/3838 ,  C09K2019/0448 ,  C09K2219/03 ,  G02B5/3016

Abstract: A polymerizable liquid crystal compound represented by Chemical Formula 1: wherein in Chemical Formula 1, groups and variables are the same as defined in the detailed description.