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    IMAGE SENSOR INCLUDING AUTO-FOCUS PIXELS
    11.
    发明公开
    IMAGE SENSOR INCLUDING AUTO-FOCUS PIXELS 审中-公开

    公开(公告)号：US20240258351A1

    公开(公告)日：2024-08-01

    申请号：US18631933

    申请日：2024-04-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Taesung LEE ,  Dongmin KEUM ,  Bumsuk KIM ,  Jinho KIM ,  Junsung PARK ,  Kwanghee LEE ,  Dongkyu LEE ,  Yunki LEE

    IPC: H01L27/146 ,  H04N23/67

    CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14643 ,  H04N23/672

    Abstract: An image sensor includes a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, each of the normal pixel, the first AF pixel and the second AF pixel including a photodiode. The image sensor further includes a normal microlens disposed on the normal pixel, and a first AF microlens disposed on the first AF pixel and the second AF pixel. The photodiode of the normal pixel, the photodiode of the first AF pixel, and the photodiode of the second AF pixel are respectively disposed in photo-detecting areas of a semiconductor substrate. A height of the first AF microlens in a vertical direction from a top surface of the semiconductor substrate is greater than a height of the normal microlens in the vertical direction from the top surface of the semiconductor substrate.

    MEMORY DEVICE INCLUDING VERTICAL CHANNEL TRANSISTOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    12.
    发明公开
    MEMORY DEVICE INCLUDING VERTICAL CHANNEL TRANSISTOR AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240215215A1

    公开(公告)日：2024-06-27

    申请号：US18534220

    申请日：2023-12-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sangwook KIM ,  Kwanghee LEE ,  Jeeeun YANG ,  Moonil JUNG ,  Euntae KIM ,  Youngkwan CHA

    IPC: H10B12/00

    CPC classification number: H10B12/00

    Abstract: A memory device includes a read word line on a substrate, a first channel extending along a plane perpendicular to an upper surface of the substrate, a second channel facing the first channel in parallel, a first gate insulation layer adjacent to the first channel between the first channel and the second channel, a second gate insulation layer adjacent to the second channel between the first channel and the second channel, a gate electrode adjacent to the first gate insulation layer between the first gate insulation layer and the second gate insulation layer, a write word line adjacent to the second gate insulation layer between the first gate insulation layer and the second gate insulation layer, a read bit line electrically connected to the first channel, and a write bit line electrically connected to the second channel.

    IMAGE SENSOR
    14.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20230122283A1

    公开(公告)日：2023-04-20

    申请号：US17812487

    申请日：2022-07-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Taehan KIM ,  Yunki LEE ,  Dongmin KEUM ,  Bumsuk KIM ,  Kwanghee LEE ,  Yeaju JANG

    IPC: H04N5/369 ,  H01L27/146 ,  H04N5/3745

    Abstract: An image sensor includes a pixel array in which a plurality of normal pixels and a plurality of autofocus (AF) pixels are disposed, and a logic circuit. The logic circuit provides an autofocus function using a phase difference between pixel signals obtained from each of the plurality of AF pixels. Each of the AF pixels includes a single AF lens disposed on a pair of pixel areas. An AF lens of the AF pixel spaced apart from a center of the pixel array may have an area larger than an area of the AF lens of the AF pixel adjacent to the center.

    OXIDE SEMICONDUCTOR TRANSISTOR
    15.
    发明申请
    OXIDE SEMICONDUCTOR TRANSISTOR 有权

    公开(公告)号：US20210367080A1

    公开(公告)日：2021-11-25

    申请号：US17308543

    申请日：2021-05-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwanghee LEE ,  Sangwook KIM ,  Jinseong HEO

    IPC: H01L29/78 ,  H01L29/51 ,  H01L29/66

    Abstract: An oxide semiconductor transistor includes: an insulating substrate including a trench; a gate electrode in the trench; an oxide semiconductor layer on a surface of the insulating substrate, the surface exposed through the trench; and a ferroelectric layer between the gate electrode and the oxide semiconductor layer, wherein the oxide semiconductor layer may include a source region and a drain region which are on the insulating substrate outside the trench and are apart from each other with the gate electrode therebetween.

    IMAGE SENSOR INCLUDING DEVICE ISOLATION STRUCTURE
    17.
    发明公开
    IMAGE SENSOR INCLUDING DEVICE ISOLATION STRUCTURE 审中-公开

    公开(公告)号：US20240321921A1

    公开(公告)日：2024-09-26

    申请号：US18610413

    申请日：2024-03-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seounghyun KIM ,  Changhyo KOO ,  Sangchun PARK ,  Kwanghee LEE ,  Wook LEE ,  Haeyeon CHUNG

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645

    Abstract: Provided is an image sensor including a device isolation structure. The image sensor includes a semiconductor substrate including a pixel array including a plurality of pixels, a first photoelectric conversion device and a second photoelectric conversion device inside the semiconductor substrate and included in each of the plurality of pixels, microlenses on the first photoelectric conversion device and the second photoelectric conversion device and a device isolation structure between the plurality of pixels and between the first photoelectric conversion device and the second photoelectric conversion device, the device isolation structure opening a part between the first photoelectric conversion device and the second photoelectric conversion device, including an open region at each edge of the plurality of pixels, and may be continuous in the pixel array.

    IMAGE SENSOR
    20.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240021638A1

    公开(公告)日：2024-01-18

    申请号：US18221736

    申请日：2023-07-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yeaju JANG ,  Dongmin KEUM ,  Kwanghee LEE ,  Bumsuk KIM ,  Jinho KIM ,  Yun Ki LEE

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14645

    Abstract: An image sensor includes a first pixel group on a substrate and including a plurality of first pixels, a second pixel group on the substrate and including a plurality of second pixels, where at least one of the plurality of first pixels and at least one of the plurality of second pixels are adjacent in a first direction, a first autofocus pixel group between the first pixel group and the second pixel group, the first autofocus pixel group including a first autofocus pixel adjacent to the first pixel group and a second autofocus pixel adjacent to the second pixel group, a first color filter on the first autofocus pixel and the second autofocus pixel, a second color filter on the plurality of second pixels, and a light-shield pattern that separates the first color filter and the second color filter.

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