公开(公告)号：US09882059B2

公开(公告)日：2018-01-30

申请号：US14571981

申请日：2014-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US09768320B2

公开(公告)日：2017-09-19

申请号：US15184213

申请日：2016-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Akihisa Shimomura ,  Tetsuhiro Tanaka ,  Sachiaki Tezuka

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/78 ,  H01L29/26 ,  H01L29/10 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/105 ,  H01L29/26 ,  H01L29/41733 ,  H01L29/78 ,  H01L29/78693 ,  H01L29/78696

Abstract: Disclosed is a semiconductor device including two oxide semiconductor layers, where one of the oxide semiconductor layers has an n-doped region while the other of the oxide semiconductor layers is substantially i-type. The semiconductor device includes the two oxide semiconductor layers sandwiched between a pair of oxide layers which have a common element included in any of the two oxide semiconductor layers. A double-well structure is formed in a region including the two oxide semiconductor layers and the pair of oxide layers, leading to the formation of a channel formation region in the n-doped region. This structure allows the channel formation region to be surrounded by an i-type oxide semiconductor, which contributes to the production of a semiconductor device that is capable of feeding enormous current.

公开(公告)号：US09660098B2

公开(公告)日：2017-05-23

申请号：US14883732

申请日：2015-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Sachiaki Tezuka ,  Tetsuhiro Tanaka ,  Toshihiko Takeuchi ,  Hideomi Suzawa ,  Suguru Hondo

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/49 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/1054 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78

Abstract: Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced.

公开(公告)号：US09660097B2

公开(公告)日：2017-05-23

申请号：US14722260

申请日：2015-05-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78648

Abstract: A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions.

公开(公告)号：US09647095B2

公开(公告)日：2017-05-09

申请号：US15044422

申请日：2016-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/26 ,  H01L21/02 ,  H01L21/467 ,  H01L21/477 ,  H01L29/24

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/467 ,  H01L21/477 ,  H01L29/247 ,  H01L29/263 ,  H01L29/78693 ,  H01L29/78696

Abstract: A semiconductor device formed using an oxide semiconductor layer and having small electrical characteristic variation is provided. A highly reliable semiconductor device including an oxide semiconductor layer and exhibiting stable electric characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. In the semiconductor device, an oxide semiconductor layer is used for a channel formation region, a multilayer film which includes an oxide layer in which the oxide semiconductor layer is wrapped is provided, and an edge of the multilayer film has a curvature in a cross section.

公开(公告)号：US09627545B2

公开(公告)日：2017-04-18

申请号：US14243045

申请日：2014-04-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Hideomi Suzawa

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78693 ,  H01L29/78696

Abstract: Provided is a semiconductor device in which deterioration of electrical characteristics can be suppressed. The semiconductor device includes a first oxide semiconductor layer over an insulating surface, a second oxide semiconductor layer over the first oxide semiconductor layer, a source electrode layer and a drain electrode layer whose one surfaces are in contact with part of the first oxide semiconductor layer and part of the second oxide semiconductor layer, a third oxide semiconductor layer over the first oxide semiconductor layer and the second oxide semiconductor layer, a gate insulating film over the third oxide semiconductor layer, and a gate electrode layer over the gate insulating film. The second oxide semiconductor layer wholly overlaps with the first oxide semiconductor layer. Part of the third oxide semiconductor layer is in contact with the other surfaces of the source electrode layer and the drain electrode layer.

公开(公告)号：US09601632B2

公开(公告)日：2017-03-21

申请号：US14021618

申请日：2013-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Motomu Kurata ,  Masashi Tsubuku

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/14616 ,  H01L27/14689 ,  H01L29/7869 ,  H01L29/78696

Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

公开(公告)号：US09601515B2

公开(公告)日：2017-03-21

申请号：US14294301

申请日：2014-06-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hideomi Suzawa ,  Koji Ono ,  Tatsuya Arao

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  G02F1/1345

CPC classification number: H01L27/1222 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L2029/7863

Abstract: A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.

公开(公告)号：US09472678B2

公开(公告)日：2016-10-18

申请号：US14580651

申请日：2014-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Hideomi Suzawa ,  Yasumasa Yamane ,  Yuhei Sato ,  Sachiaki Tezuka

IPC: H01L29/786 ,  H01L29/16 ,  H01L27/088 ,  H01L27/06

CPC classification number: H01L29/7869 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1225 ,  H01L29/16

Abstract: To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.

Abstract translation: 为了提供具有稳定电特性的晶体管，具有低截止电流的晶体管，具有高导通电流的晶体管，包括晶体管的半导体器件或耐用的半导体器件。 半导体器件包括使用硅的第一晶体管，在第一晶体管上的氧化铝膜，以及在氧化铝膜上使用氧化物半导体的第二晶体管。 氧化物半导体的氢浓度低于硅。

公开(公告)号：US20160293773A1

公开(公告)日：2016-10-06

申请号：US15175595

申请日：2016-06-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Hideomi Suzawa ,  Kazuya Hanaoka

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/04

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: To provide a semiconductor device having a structure capable of suppressing deterioration of its electrical characteristics which becomes apparent with miniaturization. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with the second oxide semiconductor film; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode over the gate insulating film. A first interface between the gate electrode and the gate insulating film has a region closer to the insulating surface than a second interface between the first oxide semiconductor film and the second oxide semiconductor film.