公开(公告)号：US09660097B2

公开(公告)日：2017-05-23

申请号：US14722260

申请日：2015-05-27

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Hideomi Suzawa

IPC分类号： H01L29/12 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78648

摘要： A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions.

公开(公告)号：US09647095B2

公开(公告)日：2017-05-09

申请号：US15044422

申请日：2016-02-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Hideomi Suzawa

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/26 ,  H01L21/02 ,  H01L21/467 ,  H01L21/477 ,  H01L29/24

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/467 ,  H01L21/477 ,  H01L29/247 ,  H01L29/263 ,  H01L29/78693 ,  H01L29/78696

摘要： A semiconductor device formed using an oxide semiconductor layer and having small electrical characteristic variation is provided. A highly reliable semiconductor device including an oxide semiconductor layer and exhibiting stable electric characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. In the semiconductor device, an oxide semiconductor layer is used for a channel formation region, a multilayer film which includes an oxide layer in which the oxide semiconductor layer is wrapped is provided, and an edge of the multilayer film has a curvature in a cross section.

公开(公告)号：US09627545B2

公开(公告)日：2017-04-18

申请号：US14243045

申请日：2014-04-02

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Hideomi Suzawa

IPC分类号： H01L29/786 ,  H01L29/417

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/78693 ,  H01L29/78696

摘要： Provided is a semiconductor device in which deterioration of electrical characteristics can be suppressed. The semiconductor device includes a first oxide semiconductor layer over an insulating surface, a second oxide semiconductor layer over the first oxide semiconductor layer, a source electrode layer and a drain electrode layer whose one surfaces are in contact with part of the first oxide semiconductor layer and part of the second oxide semiconductor layer, a third oxide semiconductor layer over the first oxide semiconductor layer and the second oxide semiconductor layer, a gate insulating film over the third oxide semiconductor layer, and a gate electrode layer over the gate insulating film. The second oxide semiconductor layer wholly overlaps with the first oxide semiconductor layer. Part of the third oxide semiconductor layer is in contact with the other surfaces of the source electrode layer and the drain electrode layer.

公开(公告)号：US09601632B2

公开(公告)日：2017-03-21

申请号：US14021618

申请日：2013-09-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Motomu Kurata ,  Masashi Tsubuku

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/14616 ,  H01L27/14689 ,  H01L29/7869 ,  H01L29/78696

摘要： The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

公开(公告)号：US09601515B2

公开(公告)日：2017-03-21

申请号：US14294301

申请日：2014-06-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hideomi Suzawa ,  Koji Ono ,  Tatsuya Arao

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  G02F1/1345

CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L2029/7863

摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.

公开(公告)号：US09472678B2

公开(公告)日：2016-10-18

申请号：US14580651

申请日：2014-12-23

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Hideomi Suzawa ,  Yasumasa Yamane ,  Yuhei Sato ,  Sachiaki Tezuka

IPC分类号： H01L29/786 ,  H01L29/16 ,  H01L27/088 ,  H01L27/06

CPC分类号： H01L29/7869 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1225 ,  H01L29/16

摘要： To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.

摘要翻译： 为了提供具有稳定电特性的晶体管，具有低截止电流的晶体管，具有高导通电流的晶体管，包括晶体管的半导体器件或耐用的半导体器件。 半导体器件包括使用硅的第一晶体管，在第一晶体管上的氧化铝膜，以及在氧化铝膜上使用氧化物半导体的第二晶体管。 氧化物半导体的氢浓度低于硅。

公开(公告)号：US20160293773A1

公开(公告)日：2016-10-06

申请号：US15175595

申请日：2016-06-07

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Hideomi Suzawa ,  Kazuya Hanaoka

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/04

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

摘要： To provide a semiconductor device having a structure capable of suppressing deterioration of its electrical characteristics which becomes apparent with miniaturization. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with the second oxide semiconductor film; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode over the gate insulating film. A first interface between the gate electrode and the gate insulating film has a region closer to the insulating surface than a second interface between the first oxide semiconductor film and the second oxide semiconductor film.

公开(公告)号：US09450080B2

公开(公告)日：2016-09-20

申请号：US14570422

申请日：2014-12-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Naoto Yamade ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Masayuki Sakakura ,  Yuhei Sato ,  Yasumasa Yamane

IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L21/477 ,  H01L21/465 ,  H01L21/441 ,  H01L21/425 ,  H01L21/383

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/383 ,  H01L21/425 ,  H01L21/441 ,  H01L21/465 ,  H01L21/477 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating film, oxygen is added to the first oxide semiconductor film, and then a second oxide semiconductor film is formed over the first oxide semiconductor film. Then, heat treatment is performed. Next, part of the first insulating film, part of the first oxide semiconductor film, and part of the second oxide semiconductor film are etched to form a first gate insulating film having a projection. Next, a pair of electrodes is formed over the second oxide semiconductor film, and a third oxide semiconductor film is formed over the second oxide semiconductor film and the pair of electrodes. Then, a second gate insulating film is formed over the third oxide semiconductor film, and a second gate electrode is formed over the second gate insulating film.

摘要翻译： 半导体器件通过以下方法制造。 在第一栅电极和第一绝缘膜上形成第一氧化物半导体膜，在第一氧化物半导体膜上添加氧，然后在第一氧化物半导体膜上形成第二氧化物半导体膜。 然后进行热处理。 接下来，蚀刻第一绝缘膜的一部分，第一氧化物半导体膜的一部分和第二氧化物半导体膜的一部分，以形成具有突起的第一栅极绝缘膜。 接着，在第二氧化物半导体膜上形成一对电极，在第二氧化物半导体膜和一对电极上形成第三氧化物半导体膜。 然后，在第三氧化物半导体膜上形成第二栅极绝缘膜，在第二栅极绝缘膜上形成第二栅电极。

公开(公告)号：US09449853B2

公开(公告)日：2016-09-20

申请号：US14471766

申请日：2014-08-28

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yoshitaka Yamamoto ,  Tetsuhiro Tanaka ,  Takayuki Inoue ,  Hideomi Suzawa

IPC分类号： H01L21/336 ,  H01L21/441 ,  H01L21/473 ,  H01L29/786 ,  H01L29/51 ,  H01L21/02 ,  H01L29/66 ,  H01L29/423 ,  H01L21/28 ,  H01L29/792 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/465 ,  H01L29/49 ,  H01L27/12 ,  H01L21/316

CPC分类号： H01L29/7869 ,  H01L21/0214 ,  H01L21/02181 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/28194 ,  H01L21/28282 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31645 ,  H01L21/32136 ,  H01L21/441 ,  H01L21/465 ,  H01L21/473 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696 ,  H01L29/792

摘要： A semiconductor device in which the threshold is adjusted is provided. In a transistor including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the semiconductor, the electron trap layer includes crystallized hafnium oxide. The crystallized hafnium oxide is deposited by a sputtering method using hafnium oxide as a target. When the substrate temperature is Tsub (° C.) and the proportion of oxygen in an atmosphere is P (%) in the sputtering method, P≧45−0.15×Tsub is satisfied. The crystallized hafnium oxide has excellent electron trapping properties. By the trap of an appropriate number of electrons, the threshold of the semiconductor device can be adjusted.

摘要翻译： 提供其中调整阈值的半导体器件。 在包括半导体，与半导体电连接的源电极或漏电极，栅电极和栅电极和半导体之间的电子捕获层的晶体管中，电子捕获层包括结晶的氧化铪。 通过使用氧化铪作为靶的溅射法沉积结晶的氧化铪。 溅射法中，衬底温度为Tsub（℃），气氛中氧的比例为P（％）时，P≥45〜0.15×Tsub。 结晶的氧化铪具有优异的电子捕获性能。 通过适当数量的电子的陷阱，可以调整半导体器件的阈值。

公开(公告)号：US09412877B2

公开(公告)日：2016-08-09

申请号：US14176472

申请日：2014-02-10

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Tetsuhiro Tanaka ,  Yasumasa Yamane ,  Hideomi Suzawa ,  Daisuke Matsubayashi ,  Shunpei Yamazaki

IPC分类号： H01L27/14 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/7869

摘要： A transistor or the like having excellent electrical characteristics is provided. A semiconductor device includes a gate electrode; a gate insulating film in contact with the gate electrode; and a multilayer film which is in contact with the gate insulating film and includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer in the order from a side farthest from the gate insulating film. The first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer each contain indium, an element M (aluminum, gallium, yttrium, or tin), and zinc. The first oxide semiconductor layer has a thickness greater than or equal to 20 nm and less than or equal to 200 nm. The third oxide semiconductor layer has a thickness greater than or equal to 0.3 nm and less than 10 nm.

摘要翻译： 提供具有优异电特性的晶体管等。 半导体器件包括栅电极; 与栅电极接触的栅极绝缘膜; 以及与所述栅极绝缘膜接触并且从距离所述栅极绝缘膜最远的一侧依次包括第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层的多层膜。 第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层各自含有铟，元素M（铝，镓，钇或锡）和锌。 第一氧化物半导体层具有大于或等于20nm且小于或等于200nm的厚度。 第三氧化物半导体层的厚度大于或等于0.3nm且小于10nm。