公开(公告)号：US20200219904A1

公开(公告)日：2020-07-09

申请号：US16823691

申请日：2020-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/24

Abstract: A pixel portion and a driver circuit driving the pixel portion are formed over the same substrate. At least a part of the driver circuit is faulted using an inverted staggered thin film transistor in which an oxide semiconductor layer is used and a channel protective layer is provided over the oxide semiconductor layer serving as a channel formation region which is overlapped with the gate electrode. The driver circuit as well as the pixel portion is provided over the same substrate to reduce manufacturing costs.

公开(公告)号：US20190326444A1

公开(公告)日：2019-10-24

申请号：US16459951

申请日：2019-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Tatsuya HONDA ,  Norihito SONE

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/04 ,  H01L27/12 ,  H01L21/465 ,  H01L21/428 ,  H01L21/477 ,  H01L29/66

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

公开(公告)号：US20180308989A1

公开(公告)日：2018-10-25

申请号：US16021490

申请日：2018-06-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

公开(公告)号：US20180166581A1

公开(公告)日：2018-06-14

申请号：US15891583

申请日：2018-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Junichiro SAKATA ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

公开(公告)号：US20180076335A1

公开(公告)日：2018-03-15

申请号：US15815938

申请日：2017-11-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Junichiro SAKATA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78618 ,  H01L27/1225 ,  H01L29/7869

Abstract: An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.

公开(公告)号：US20180059721A1

公开(公告)日：2018-03-01

申请号：US15685045

申请日：2017-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO

IPC: G06F1/16 ,  G09G5/38

Abstract: A novel display device and the like are provided. The data processing device includes a display panel, a means to obtain locational data, an arithmetic device, an angular sensor, a first housing, a second housing, and a hinge connected the first and second housings. The display panel is flexible, and is held in the inside of the first and second housings. The arithmetic device has a function of generating first image data based on locational data. The angular sensor supplies data of the folding angle between the housings to the arithmetic device. The arithmetic device has a function of generating second image data based on the locational data and the angular data. The second image data includes a second image and display coordinates of the second image. The display panel has a function of displaying an image based on the first image data and the second image data.

公开(公告)号：US20170323909A1

公开(公告)日：2017-11-09

申请号：US15598806

申请日：2017-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  G02F1/1362

Abstract: With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

公开(公告)号：US20170221410A1

公开(公告)日：2017-08-03

申请号：US15416317

申请日：2017-01-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Isamu SHIGEMORI

IPC: G09G3/20 ,  G09G3/3275 ,  G06F3/03 ,  G09G3/36

CPC classification number: G09G3/2096 ,  G06F1/1613 ,  G06F1/1643 ,  G06F1/1684 ,  G06F1/1686 ,  G06F1/3265 ,  G06F3/03 ,  G06F3/03547 ,  G06F3/0481 ,  G06F3/04842 ,  G06F3/0488 ,  G09G3/22 ,  G09G3/30 ,  G09G3/3208 ,  G09G3/3225 ,  G09G3/3275 ,  G09G3/3406 ,  G09G3/3611 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2300/0456 ,  G09G2300/046 ,  G09G2360/145 ,  Y02D10/153

Abstract: A novel information processing device that is highly convenient is provided. The information processing device includes a selection circuit having a function of supplying image data to a reflective display element, a light-emitting element, or both of them on the basis of input position coordinate data, sensing data about the illuminance of the usage environment, and the image data. An icon with high selection frequency is displayed by both the reflective display element and the light-emitting element on the basis of icon coordinate data and the input position coordinate data, so that the icon can be displayed brightly with improved visibility.

公开(公告)号：US20170110337A1

公开(公告)日：2017-04-20

申请号：US15295016

申请日：2016-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Yukinori SHIMA

IPC: H01L21/385 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/385 ,  H01L21/46 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device including an oxide conductor with high conductivity and high transmittance is provided. A manufacturing method for a semiconductor device includes the steps of: forming an oxide semiconductor over a first insulator; forming a second insulator over the first insulator and the oxide semiconductor; forming a first conductor over the second insulator; forming an etching mask over the first conductor; forming a second conductor including a region overlapping with the oxide semiconductor by etching the first conductor with use of the etching mask as a mask; removing the etching mask; and performing heat treatment after forming a hydrogen-containing layer over the second insulator and the second conductor.

公开(公告)号：US20160190177A1

公开(公告)日：2016-06-30

申请号：US15063737

申请日：2016-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Rihito WADA ,  Yoko CHIBA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L27/1225 ,  G02F1/13392 ,  G02F1/13458 ,  G02F2001/13398 ,  G09G2300/0804 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/5221

Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

Abstract translation: 显示装置包括其中像素电极层布置在矩阵中的像素部分，并且相应于像素电极设置具有至少两种具有不同量的氧的氧化物半导体层的组合的倒置交错薄膜晶体管 层。 在该显示装置的像素部的周围，设置有通过与像素电极层相同的材料形成的导电层与形成在对置基板上的公共电极层电连接的焊盘部。 通过提供适合于设置在显示面板中的焊盘部分的结构，实现了本发明防止由于各种显示装置中的薄膜分离引起的缺陷的一个反对意见。