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    SEMICONDUCTOR DEVICE
    11.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240105734A1

    公开(公告)日：2024-03-28

    申请号：US18531767

    申请日：2023-12-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masayuki SAKAKURA ,  Motoki NAKASHIMA

    IPC: H01L27/12

    CPC classification number: H01L27/1225

    Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

    METHOD FOR SUPPORTING DOCUMENT PREPARATION AND SYSTEM FOR SUPPORTING DOCUMENT PREPARATION
    12.
    发明公开
    METHOD FOR SUPPORTING DOCUMENT PREPARATION AND SYSTEM FOR SUPPORTING DOCUMENT PREPARATION 审中-公开

    公开(公告)号：US20240104291A1

    公开(公告)日：2024-03-28

    申请号：US18470752

    申请日：2023-09-20

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Junpei MOMO ,  Motoki NAKASHIMA ,  Natsuko TAKASE

    IPC: G06F40/106 ,  G06F40/194 ,  G06F40/205

    CPC classification number: G06F40/106 ,  G06F40/194 ,  G06F40/205

    Abstract: To support preparation of a document with consistency. First document data and second document data are received, the first document data is divided into a plurality of first blocks, the second document data is divided into a plurality of second blocks, a plurality of first combinations each including corresponding first and second blocks are determined, and of the plurality of first combinations, one or more second combinations with a difference between the corresponding first and second blocks are shown, any one of the plurality of first blocks included in the second combinations is received as a first designated block, the second block corresponding to the first designated block is received as a second designated block, and of the first combinations, a third combination in which presence or absence of establishment of textual entailment between the first designated block and the first block is different from presence or absence of establishment of textual entailment between the second designated block and the second block is shown.

    OXIDE MATERIAL AND SEMICONDUCTOR DEVICE
    13.
    发明申请
    OXIDE MATERIAL AND SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220165883A1

    公开(公告)日：2022-05-26

    申请号：US17564556

    申请日：2021-12-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Tatsuya HONDA

    IPC: H01L29/786 ,  H01L29/26 ,  H01L29/04 ,  C01G19/00

    Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

    OXIDE MATERIAL AND SEMICONDUCTOR DEVICE
    14.
    发明申请
    OXIDE MATERIAL AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190013407A1

    公开(公告)日：2019-01-10

    申请号：US16130588

    申请日：2018-09-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Tatsuya HONDA

    IPC: H01L29/786 ,  H01L29/26 ,  C01G19/00 ,  H01L29/04

    Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

    OXIDE MATERIAL AND SEMICONDUCTOR DEVICE
    17.
    发明申请
    OXIDE MATERIAL AND SEMICONDUCTOR DEVICE 审中-公开
    氧化物材料和半导体器件

    公开(公告)号：US20160284861A1

    公开(公告)日：2016-09-29

    申请号：US15178949

    申请日：2016-06-10

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Tatsuya HONDA

    IPC: H01L29/786 ,  H01L29/04

    CPC classification number: H01L29/7869 ,  C01G19/006 ,  C01P2002/72 ,  H01L29/04 ,  H01L29/045 ,  H01L29/26 ,  H01L29/78696

    Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

    Abstract translation: 目的是提供适用于晶体管，二极管等中所包含的半导体的材料。 另一个目的是提供一种包括晶体管的半导体器件，其中与氧化物半导体膜接触的氧化物半导体膜和栅极绝缘膜之间的界面处的电子态的条件是有利的。 此外，另一个目的是通过给氧化半导体膜用于沟道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。 使用包括具有c轴对准的晶体的氧化物材料形成半导体器件，当从表面或界面的方向观察时，半导体器件具有三角形或六边形的原子排列，并围绕c轴旋转。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    18.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20160254386A1

    公开(公告)日：2016-09-01

    申请号：US15047940

    申请日：2016-02-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Tetsuhiro TANAKA ,  Akihisa SHIMOMURA ,  Ryo TOKUMARU ,  Yasumasa YAMANE ,  Yuhei SATO ,  Naoki OKUNO ,  Motoki NAKASHIMA

    IPC: H01L29/786 ,  H01L29/06 ,  H01L29/51

    CPC classification number: H01L29/7869 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/0607 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969

    Abstract: Provided is a transistor with stable electrical characteristics. Provided is a semiconductor device including an oxide semiconductor over a substrate, a first conductor in contact with a top surface of the oxide semiconductor, a second conductor in contact with the top surface of the oxide semiconductor, a first insulator over the first and second conductors and in contact with the top surface of the oxide semiconductor, a second insulator over the first insulator, a third conductor over the second insulator, and a third insulator over the third conductor. The third conductor overlaps with the first conductor with the first and second insulators positioned therebetween, and overlaps with the second conductor with the first and second insulators positioned therebetween. The first insulator contains oxygen. The second insulator transmits less oxygen than the first insulator. The third insulator transmits less oxygen than the first insulator.

    Abstract translation: 提供了具有稳定电特性的晶体管。 提供了一种半导体器件，其包括在衬底上的氧化物半导体，与氧化物半导体的顶表面接触的第一导体，与氧化物半导体的顶表面接触的第二导体，第一和第二导体上的第一绝缘体 并且与所述氧化物半导体的顶表面接触，在所述第一绝缘体上方的第二绝缘体，所述第二绝缘体上的第三导体以及所述第三导体上的第三绝缘体。 第三导体与第一导体重叠，其中第一和第二绝缘体位于它们之间，并且与第二导体重叠，其中第一和第二绝缘体位于它们之间。 第一绝缘体包含氧。 第二绝缘体比第一绝缘体传输更少的氧。 第三绝缘体比第一绝缘体传输更少的氧。

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