公开(公告)号：US09356082B2

公开(公告)日：2016-05-31

申请号：US14657419

申请日：2015-03-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiyuki Isa

IPC: H05B33/00 ,  H01J1/62 ,  H01L27/32 ,  H05B33/02 ,  H01L29/786 ,  H01L51/52

CPC classification number: H01L27/3248 ,  H01L27/3206 ,  H01L27/3209 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3246 ,  H01L29/7869 ,  H01L51/5215 ,  H01L51/5218 ,  H01L51/5234 ,  H01L51/5253 ,  H01L51/5265 ,  H01L51/5284 ,  H01L2251/5315 ,  H01L2251/558 ,  H05B33/02

Abstract: To improve image quality of a full-color organic EL display panel. A partition has a stacked structure formed using different materials. A lower partition has a curved shape, and an upper partition has a flat top surface. An angle formed between a plane surface connecting a lower end of a side surface with an upper end of the side surface of the upper partition and the top surface of the upper partition is less than or equal to 90°. The height of the partition is controlled to be greater than or equal to 0.5 μm and less than or equal to 1.3 μm. With such a structure, a large color organic EL display panel achieves high-definition display.

Abstract translation: 提高全彩有机EL显示面板的图像质量。 隔板具有使用不同材料形成的堆叠结构。 下隔板具有弯曲形状，上隔板具有平坦的顶表面。 在连接侧表面的下端的平面与上隔板的侧表面的上端和上隔板的上表面之间形成的角度小于或等于90°。 隔板的高度被控制在大于或等于0.5μm且小于或等于1.3μm。 利用这种结构，大型彩色有机EL显示面板实现高清晰度显示。

公开(公告)号：US20140138680A1

公开(公告)日：2014-05-22

申请号：US14164476

申请日：2014-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiyuki Isa ,  Masafumi Morisue ,  Ikuko Kawamata

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1292 ,  H01L51/0022 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

Abstract translation: 提供可以通过简化的工艺和制造技术制造的半导体器件和显示器件。 另一个目的是提供一种技术，通过该技术可以以可控制性形成具有期望形状的部分构成半导体器件或显示装置的布线等的图案。

公开(公告)号：US12094368B2

公开(公告)日：2024-09-17

申请号：US17346348

申请日：2021-06-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshiyuki Isa ,  Akio Endo ,  Yosuke Tsukamoto ,  Jun Koyama

IPC: G06F1/16 ,  G09F9/30

CPC classification number: G09F9/301 ,  G06F1/1626 ,  G06F1/1643 ,  G06F1/1652

Abstract: An electronic device including a large display region and with improved portability is provided. An electronic device with improved reliability is provided.
An information processing device includes a first film, a panel substrate, and at least a first housing. The panel substrate has flexibility and a display region, and the first film has a visible-light-transmitting property and flexibility. The first housing includes a first slit, the panel substrate includes a region positioned between the first film and a second film, the first slit has a function of storing the region, and one or both of the panel substrate and the first film can slide along the first slit.

公开(公告)号：US09184221B2

公开(公告)日：2015-11-10

申请号：US14669722

申请日：2015-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuhiro Jinbo ,  Toshiyuki Isa ,  Tatsuya Honda

IPC: H01L21/00 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/45 ,  H01L29/423 ,  H01L51/56 ,  H01L21/02

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/283 ,  H01L27/3258 ,  H01L27/3274 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L51/003 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338

Abstract: An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.

公开(公告)号：US08956934B2

公开(公告)日：2015-02-17

申请号：US13706841

申请日：2012-12-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Miyako Nakajima ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Erika Kato ,  Mitsuhiro Ichijo ,  Kazutaka Kuriki ,  Tomokazu Yokoi

IPC: H01L29/66 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/6675 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

Abstract: An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.

Abstract translation: 目的是提供具有小截止电流，大电流和高场效应迁移率的薄膜晶体管。 层叠氮化硅层和通过氧化氮化硅层形成的氧化硅层作为栅极绝缘层，从栅极绝缘层的氧化硅层的界面生长晶体，形成微晶半导体层; 因此，制造了反交错的薄膜晶体管。 由于晶体从栅极绝缘层生长，所以薄膜晶体管可以具有高结晶度，大电流和高的场效应迁移率。 此外，提供缓冲层以减少电流。

公开(公告)号：US12232396B2

公开(公告)日：2025-02-18

申请号：US18201629

申请日：2023-05-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiyuki Isa

IPC: G06F3/041 ,  G06F3/044 ,  H01L27/32 ,  H01L51/00 ,  H05B33/26 ,  H10K59/131 ,  H10K59/40 ,  H10K71/80 ,  H10K77/10 ,  H10K59/12 ,  H10K102/00

Abstract: The display defects of a display device are reduced. The display quality of the display device is improved. The display device includes a display panel and a first conductive layer. The display panel includes a display element including a pair of electrodes. An electrode of the pair of electrodes which is closer to one surface of the display panel is supplied with a constant potential. A constant potential is supplied to the first conductive layer. The second conductive layer provided on the other surface of the display panel is in contact with the first conductive layer, whereby the second conductive layer is also supplied with the constant potential. The second conductive layer includes a portion not fixed to the first conductive layer.

公开(公告)号：US11984562B2

公开(公告)日：2024-05-14

申请号：US18089199

申请日：2022-12-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota Tajima ,  Toshiyuki Isa ,  Akihiro Chida

IPC: H01M10/42 ,  B60L58/18 ,  G01R31/367 ,  H01M10/48

CPC classification number: H01M10/4235 ,  B60L58/18 ,  G01R31/367 ,  H01M10/4257 ,  H01M10/48 ,  H01M2010/4271 ,  H01M2220/20

Abstract: A highly safe power storage system is provided. If n (n is an integer over or equal to three) secondary batteries are used in a vehicle such as an electric vehicle, a circuit configuration is used with which the condition of each secondary battery is monitored using an anomaly detection unit; and if an anomaly such as a micro-short circuit is detected, only the detected anomalous secondary battery is electrically separated from the charging system or the discharging system. At least one microcomputer monitors anomalies in n secondary batteries consecutively, selects the anomalous secondary battery or the detected secondary battery which causes an anomaly, and gives an instruction to bypass the secondary battery with each switch.

公开(公告)号：US11955612B2

公开(公告)日：2024-04-09

申请号：US18093833

申请日：2023-01-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazutaka Kuriki ,  Ryota Tajima ,  Kouhei Toyotaka ,  Hideaki Shishido ,  Toshiyuki Isa

IPC: H01M10/48 ,  G06N3/04 ,  G06N3/065 ,  H01M10/44 ,  H02J7/00

CPC classification number: H01M10/482 ,  G06N3/04 ,  G06N3/065 ,  H01M10/441 ,  H01M10/486 ,  H02J7/0013 ,  H02J7/0047 ,  H02J7/007

Abstract: A power storage system with excellent characteristics is provided. A power storage system with a high degree of safety is provided. A power storage system with less deterioration is provided. A storage battery with excellent characteristics is provided. The power storage system includes a neural network and a storage battery. The neural network includes an input layer, an output layer, and one or more hidden layers between the input layer and the output layer. The predetermined hidden layer is connected to the previous hidden layer or the previous input layer by a predetermined weight coefficient, and connected to the next hidden layer or the next output layer by a predetermined weight coefficient. In the storage battery, voltage and time at which the voltage is obtained are measured as one of sets of data. The sets of data measured at different times are input to the input layer and the operational condition of the storage battery is changed in accordance with a signal output from the output layer.

公开(公告)号：US11455940B2

公开(公告)日：2022-09-27

申请号：US17056687

申请日：2019-05-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koji Kusunoki ,  Kei Takahashi ,  Toshiyuki Isa

IPC: G09G3/32

Abstract: A display device that inhibits display deterioration is provided. The display device estimates the amount of deterioration of a pixel included in the display device and corrects a first image signal supplied to the pixel. The display device includes a display panel including a plurality of pixels, a frame memory, and an arithmetic portion. The pixels each include a light-emitting element and a transistor supplying a current to the light-emitting element. The arithmetic portion has a function of performing an arithmetic operation in accordance with a regression model. A forecast error parameter and an output parameter are set in the arithmetic portion. The arithmetic portion updates the forecast error parameter from a first observation signal supplied from the frame memory and a second observation signal supplied from the pixel, in accordance with the regression model, and updates an output parameter by the forecast error parameter in accordance with the regression model. The arithmetic portion corrects the first image signal by the output parameter and generates a second image signal, and the light-emitting element emits light by the second image signal supplied to the transistor included in the pixel.

公开(公告)号：US11437601B2

公开(公告)日：2022-09-06

申请号：US14804872

申请日：2015-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiyuki Isa

IPC: H01L51/52 ,  H01L27/32

Abstract: A novel stacked structure that is highly convenient or reliable is provided. A method for manufacturing a novel stacked structure that is highly convenient or reliable is also provided. Furthermore, a novel semiconductor device is provided. The stacked structure includes first to fifth regions in this order. Each of the first to fifth regions includes a first base and a second base. The first region, the third region, and the fifth region each include a spacer that makes a predetermined distance between the first base and the second base.