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公开(公告)号：US20230378412A1
公开(公告)日：2023-11-23
申请号：US18200400
申请日：2023-05-22
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min JANG , Chang Yeon KIM
IPC: H01L33/62 , H01L33/24 , H01L33/56 , H01L25/075 , H01L33/00
CPC classification number: H01L33/62 , H01L33/24 , H01L33/56 , H01L25/0753 , H01L33/0008 , H01L25/0756
Abstract: A light emitting device including a first light emitter, a second light emitter, and a third light emitter, each including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. An adhesive layer includes a first adhesive portion disposed between the first light emitter, and the second light emitter, and a second adhesive portion disposed between the second light emitter and the third light emitter, in which the second light emitter is disposed between the first light emitter and the third light emitter, and the first adhesive portion and the second adhesive portion are optically transmitting and connect adjacent light emitters.
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公开(公告)号：US20220359474A1
公开(公告)日：2022-11-10
申请号：US17873040
申请日：2022-07-25
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min JANG , Chang Yeon KIM
IPC: H01L25/075 , H01L33/62 , H01L23/00
Abstract: A light emitting device for a display including: a base layer; a first LED sub-unit, a second LED sub-unit, and a third LED sub-unit on the base layer; and a supporting layer covering the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit, in which the third LED sub-unit is configured to emit light having a shorter wavelength than that of light emitted from the first LED sub-unit, and to emit light having a longer wavelength than that of light emitted from the second LED sub-unit, and a luminous intensity ratio of light emitted from the third LED sub-unit and the second LED sub-unit is configured to be about 6:1.
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公开(公告)号：US20220085239A1
公开(公告)日：2022-03-17
申请号：US17539050
申请日：2021-11-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Yeon KIM , Jong Hyeon CHAE , Chung Hoon LEE , Seong Gyu JANG , Jong Min JANG , Ho Joon LEE
Abstract: A light emitting diode (LED) pixel for a display including a light emitting structure configured to generate light and comprising at least one active layer, a first passivation layer surrounding side surfaces and an upper portion of the light emitting structure, the first passivation layer including via holes, and a plurality of via contacts filling the via holes and electrically connected to the light emitting structure, in which the via holes do not overlap the at least one active layer, and an area of the first passivation layer is greater than that of the light emitting structure in plan view.
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公开(公告)号：US20210091256A1
公开(公告)日：2021-03-25
申请号：US17110368
申请日：2020-12-03
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Min JANG , Chang Yeon KIM , Myoung Hak YANG
Abstract: A method of manufacturing a light emitting device including forming first light emitting parts on a first substrate, the first light emitting part including a first n-type semiconductor layer and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first electrode and exposing a portion of the first n-type semiconductor layer, forming second light emitting parts on a second substrate, the second light emitting part including a second n-type semiconductor layer and a second mesa structure including a second active layer, a second p-type semiconductor layer, and a second electrode and exposing a portion of the second n-type semiconductor layer, attaching a first removable carrier onto the second light emitting parts and enclosing the second light emitting parts, removing the second substrate from the second light emitting parts, and bonding the second light emitting parts to the first light emitting parts.
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公开(公告)号：US20200328250A1
公开(公告)日：2020-10-15
申请号：US16915384
申请日：2020-06-29
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon CHAE , Chung Hoon LEE , Seong Gyu JANG , Chang Yeon KIM , Ho Joon LEE
Abstract: A light emitting diode (LED) stack for a display including a first LED sub-unit configured to emit a first colored light, a second LED sub-unit disposed on the first LED sub-unit and configured to emit a second colored light, and a third LED sub-unit disposed on at least one of the first LED sub-unit and the second LED sub-unit and configured to emit a third colored light, in which the first LED sub-unit is configured to emit light through the second LED sub-unit and the third LED sub-unit, and the second LED sub-unit is configured to emit light through the third LED sub-unit.
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Patent Agency Ranking
公开(公告)号：US20190165207A1
公开(公告)日：2019-05-30
申请号：US16198784
申请日：2018-11-22
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Yeon KIM , Jong Hyeon Chae , Chung Hoon Lee , Seong Gyu Jang , Jong Min Jang , Ho Joon Lee
Abstract: A light emitting chip includes a light emitting structure including a first light emitting sub-unit, a second light emitting sub-unit, and a third light emitting sub-unit vertically stacked on each other, and a first passivation layer covering at least part of the light emitting structure, in which the first passivation layer has a bottom surface that exposes the light emitting structure to permit light from the first, second, and third sub-units to be emitted from the light emitting chip.
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公开(公告)号：US20180151780A1
公开(公告)日：2018-05-31
申请号：US15816201
申请日：2017-11-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Min JANG , Chang Yeon KIM , Jae Hee LIM
CPC classification number: H01L33/46 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2933/0025 , H01L2933/0033
Abstract: A light emitting diode including a light blocking layer is disclosed. The light emitting diode includes: a substrate including an upper surface and side surfaces; a semiconductor stack disposed under the substrate and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a light blocking layer covering the upper surface and the side surfaces of the substrate to define a light emitting surface on the upper surface of the substrate. The size of a light emitting surface of the light emitting diode can be easily controlled using the light blocking layer.
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18.发明申请公开(公告)号：US20170365743A1
公开(公告)日：2017-12-21
申请号：US15623375
申请日：2017-06-14
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Kyun YOU , Byoung Kyu PARK , Chang Yeon KIM , Chae Hon KIM
CPC classification number: H01L33/38 , H01L33/08 , H01L33/22 , H01L33/387 , H01L33/44 , H01L33/486 , H01L33/501 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2924/00014
Abstract: A light emitting diode including a semiconductor stack including a lower semiconductor layer, an active layer, and an upper semiconductor layer; an upper electrode connected to the upper semiconductor layer and including an electrode pad and extensions extending from the electrode pad; and a lower electrode connected to the lower semiconductor layer. The electrode pad includes a first electrode pad having an elongated shape, disposed along a first side of the upper semiconductor layer, and covering the upper semiconductor layer near the first side of the upper semiconductor layer, and the extensions include an edge extension extending along an edge of the upper semiconductor layer in the electrode pad and surrounding a luminous region and middle extensions extending from the edge extension or the electrode pad and dividing the luminous region into a plurality of luminous regions.
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公开(公告)号：US20150060923A1
公开(公告)日：2015-03-05
申请号：US14474982
申请日：2014-09-02
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ju Yong PARK , Jong Kyun YOU , Chang Yeon KIM
CPC classification number: H01L33/405 , H01L33/32 , H01L33/387 , H01L2933/0016
Abstract: A light emitting diode and a method of fabricating the same, the light emitting diode including: a gallium nitride-based compound semiconductor layer; a first metal layer including Mg and disposed in the form of islands that are in ohmic contact with the gallium nitride-based compound semiconductor layer; a second metal layer including Ni, covering the first metal layer, and contacting the gallium nitride-based compound semiconductor layer between the islands of the first metal layer; and a reflective metal layer covering the second metal layer.
Abstract translation: 一种发光二极管及其制造方法，所述发光二极管包括：氮化镓系化合物半导体层; 包括Mg的第一金属层，并且以与氮化镓基化合物半导体层欧姆接触的岛的形式设置; 包含Ni的第二金属层，覆盖所述第一金属层，并且使所述氮化镓基化合物半导体层与所述第一金属层的岛之间接触; 以及覆盖第二金属层的反射金属层。
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公开(公告)号：US20250023006A1
公开(公告)日：2025-01-16
申请号：US18897592
申请日：2024-09-26
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min JANG , Chang Yeon KIM
IPC: H01L33/62 , H01L25/075 , H01L33/00 , H01L33/24 , H01L33/56
Abstract: A light emitting device including a first light emitting stack, a second light emitting stack, and a third light emitting stack each including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a first adhesive layer bonding the first light emitting stack and the second light emitting stack, and a second adhesive layer bonding the second light emitting stack and the third light emitting stack, in which the second light emitting stack is disposed between the first light emitting stack and the third light emitting stack, and one of the first adhesive layer and the second adhesive layer electrically connects adjacent light emitting stacks.
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