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公开(公告)号：US20190296204A1
公开(公告)日：2019-09-26
申请号：US16464679
申请日：2017-10-11
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee OH , Hyun A KIM , Joon Sup LEE , Min Woo KANG , Hyoung Jin LIM
Abstract: A light emitting diode including a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, an ohmic reflection layer disposed on the mesa to form an ohmic contact with the second semiconductor layer, a lower insulation layer covering the mesa and the ohmic reflection layer and partially exposing the first semiconductor layer and the ohmic reflection layer, a first pad metal layer disposed on the lower insulation layer and electrically connected to the first semiconductor layer, a metal reflection layer disposed on the lower insulation layer and laterally spaced apart from the first pad metal layer, and an upper insulation layer covering the first pad metal layer and the metal reflection layer, and having a first opening exposing the first pad metal layer, in which at least a portion of the metal reflection layer covers a side surface of the mesa.
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公开(公告)号：US20230215990A1
公开(公告)日：2023-07-06
申请号：US18169499
申请日：2023-02-15
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee OH , Sang Won WOO , Wan Tae LIM
IPC: H01L33/46 , H01L25/075 , H01L33/42
CPC classification number: H01L33/46 , H01L25/0753 , H01L33/42
Abstract: A light emitting diode is provided to include a substrate; a light emitting structure disposed on the substrate, and including first and second semiconductor layers; a transparent electrode in ohmic contact with the second semiconductor layer; a contact electrode disposed on the first semiconductor layer; a current spreader disposed on the transparent electrode; a first insulation reflection layer covering the substrate, the light emitting structure, the transparent electrode, the contact electrode, and the current spreader, having openings exposing portions of the contact electrode and the current spreader, and including a distributed Bragg reflector; first and second pad electrodes disposed on the first insulation reflection layer and connected to the contact electrode and the current spreader through the openings; and a second insulation reflection layer disposed under the substrate and including a distributed Bragg reflector.
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公开(公告)号：US20220158056A1
公开(公告)日：2022-05-19
申请号：US17526072
申请日：2021-11-15
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee OH , Hyun A. KIM , Jong Kyu KIM , Jong Hyeon CHAE
IPC: H01L33/62 , H01L33/32 , H01L33/10 , H01L33/64 , H01L33/44 , H01L33/08 , H01L33/38 , H01L33/40 , H01L33/60
Abstract: A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.
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公开(公告)号：US20210005785A1
公开(公告)日：2021-01-07
申请号：US17024167
申请日：2020-09-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon CHAE , Joon Sup LEE , Daewoong SUH , Won Young ROH , Min Woo KANG , Jong Min JANG , Se Hee OH , Hyun A KIM
IPC: H01L33/38
Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.
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公开(公告)号：US20200220049A1
公开(公告)日：2020-07-09
申请号：US16823734
申请日：2020-03-19
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee OH , Jae Kwon KIM , Jong Kyu KIM , Hyun A KIM , Joon Sup LEE
Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.
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Patent Agency Ranking
公开(公告)号：US20190051805A1
公开(公告)日：2019-02-14
申请号：US16158305
申请日：2018-10-12
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee OH , Hyun A KIM , Jong Kyu KIM , Hyoung Jin LIM
Abstract: A light emitting diode includes a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell. An n-electrode pad is connected to the first contact layer; and a p-electrode pad is connected to the reflection structure on the second light emitting cell. The first light emitting cell and the second light emitting cell are isolated from each other, and their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.
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公开(公告)号：US20140353692A1
公开(公告)日：2014-12-04
申请号：US14459887
申请日：2014-08-14
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee OH , Mae Yi KIM , Seom Guen LEE , Myoung Hak YANG , Yeo Jin YOON
CPC classification number: H01L33/62 , H01L27/15 , H01L27/156 , H01L33/08 , H01L33/14 , H01L33/385 , H01L33/387 , H01L33/42 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting diode includes light emitting cells disposed on a substrate and interconnections connecting the light emitting cells to each other. Each of the light emitting cells includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a transparent electrode layer disposed on the second semiconductor layer, wherein the first and second semiconductor layers have different conductivity types. The interconnections include a common cathode commonly connecting first and second light emitting cells of the light emitting cells, the first and second light emitting cells share the first semiconductor layer, the transparent electrode layer is continuously disposed between the first and second light emitting cells, and the common cathode is electrically connected to the first and second light emitting cells through the transparent electrode layer.
Abstract translation: 发光二极管包括设置在基板上的发光单元和将发光单元彼此连接的互连。 每个发光单元包括第一半导体层，第二半导体层，设置在第一半导体层和第二半导体层之间的有源层，以及设置在第二半导体层上的透明电极层，其中第一和第二半导体 层具有不同的导电类型。 互连包括通常连接发光单元的第一和第二发光单元的公共阴极，第一和第二发光单元共享第一半导体层，透明电极层连续地设置在第一和第二发光单元之间，以及 公共阴极通过透明电极层电连接到第一和第二发光单元。
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公开(公告)号：US20230317763A1
公开(公告)日：2023-10-05
申请号：US18040904
申请日：2021-08-09
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee OH , Wan Tae LIM , Sang Won WOO
IPC: H01L27/15
CPC classification number: H01L27/156
Abstract: A light emitting diode having a plurality of light emitting cells is provided. A light emitting diode according to an embodiment includes a reflection metal layer covering a region between light emitting cells, in which the reflection metal layer is disposed between connectors electrically connecting adjacent light emitting cells, and electrically insulated from a bump pad.
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公开(公告)号：US20230079200A1
公开(公告)日：2023-03-16
申请号：US17987711
申请日：2022-11-15
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Se Hee OH , Jae Kwon KIM , Jong Kyu KIM , Hyun A KIM , Joon Sup LEE
Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.
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公开(公告)号：US20220208851A1
公开(公告)日：2022-06-30
申请号：US17697410
申请日：2022-03-17
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Kyu KIM , So Ra LEE , Yeo Jin YOON , Jae Kwon KIM , Joon Sup LEE , Min Woo KANG , Se Hee OH , Hyun A. KIM , Hyoung Jin LIM
Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.
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