公开(公告)号：US09780131B1

公开(公告)日：2017-10-03

申请号：US15454498

申请日：2017-03-09

Applicant: SK hynix Inc.

Inventor： Donghyun Woo ,  Yun-Hui Yang

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14643

Abstract: An image sensor may include a substrate having a photoelectric conversion element and a grid pattern formed over the substrate and having a flat upper surface, a first side surface, and a second side surface, wherein the first side surface and the second side are located opposite to each other. A first internal angle is formed between the flat upper surface and the first side surface, a second internal angle is formed between the flat upper surface and the second side surface, and the first internal angle may be smaller than the second internal angle.

公开(公告)号：US10481196B2

公开(公告)日：2019-11-19

申请号：US15957644

申请日：2018-04-19

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang ,  Youngwoong Do

IPC: G01R31/26 ,  H01L27/146

Abstract: An image sensor includes a pixel array and a test region adjacent to the pixel array. Each of the pixel array and the test region include a plurality of pixels, and each of the pixels in the test region include: a substrate including a photoelectric conversion element; and a transparent layer formed over the substrate and having an inclined top surface.

公开(公告)号：US20190296069A1

公开(公告)日：2019-09-26

申请号：US16219571

申请日：2018-12-13

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor may include an antireflection layer formed over a substrate, grid patterns and a guide pattern that are disposed over the antireflection layer, a color filter between the grid patterns, a phase difference detection filter structured to include a portion between one of the grid patterns and the guide pattern, and a lining layer formed to include a portion between one of the grid patterns and the phase difference detection filter. The lining layer has a refractive index lower than that of the phase difference detection filter.

公开(公告)号：US10186543B2

公开(公告)日：2019-01-22

申请号：US15437716

申请日：2017-02-21

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang

IPC: H01L27/146

Abstract: An image sensor may include a main photodiode formed in a substrate, a first inter-layer dielectric layer formed over a lower surface of the substrate, and phase difference detectors formed over the first inter-layer dielectric layer. The phase difference detectors include a left phase difference detector that is vertically overlapping and aligned with a left side region of the main photodiode, and a right phase difference detector that is vertically overlapping and aligned with a right side region of the main photodiode.

公开(公告)号：US10043838B2

公开(公告)日：2018-08-07

申请号：US15215770

申请日：2016-07-21

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag ,  Yun-Hui Yang ,  Young-Jun Kwon

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor may include: a photoelectric conversion element including a second conductive layer formed over a first conductive layer; an insulating layer and a third conductive layer which are sequentially formed over the second conductive layer; an opening exposing the second conductive layer through the third conductive layer and the insulating layer; a channel layer formed along the surface of the opening, and including first and second channel layers which are coupled to each other while having different conductivity types; and a transfer gate formed over the channel layer to fill the opening, and partially formed over the third conductive layer.

公开(公告)号：US10015482B2

公开(公告)日：2018-07-03

申请号：US15454531

申请日：2017-03-09

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang ,  Donghyun Woo ,  Jong-Chae Kim

IPC: H04N17/00

CPC classification number: H04N17/002 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641

Abstract: An image sensor includes a substrate including an active pixel and a test pattern, wherein the test pattern is located adjacent to the active pixel, wherein the active pixel comprises a first photodiode, a floating diffusion, a first channel provided between the first photodiode and the floating diffusion, and a first transfer gate electrode provided over the first channel, wherein the test pattern comprises a first test photodiode, a test floating diffusion, a second channel provided between the first test photodiode and the test floating diffusion, a first test transfer gate electrode provided over the second channel, and a first contact plug connected to the first test photodiode, and wherein the first test photodiode, the test floating diffusion, the second channel, and the first test transfer gate have substantially the same alignment errors as the first photodiode, the floating diffusion, the first channel, and the first transfer gate electrode, respectively.

公开(公告)号：US10008526B2

公开(公告)日：2018-06-26

申请号：US15238468

申请日：2016-08-16

Applicant: SK hynix Inc.

Inventor： Sung-Kun Park ,  Yun-Hui Yang ,  Pyong-Su Kwag ,  Dong-Hyun Woo ,  Young-Jun Kwon ,  Min-Ki Na ,  Cha-Young Lee ,  Ho-Ryeong Lee

IPC: H01L29/04 ,  H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

公开(公告)号：US09929194B2

公开(公告)日：2018-03-27

申请号：US15446775

申请日：2017-03-01

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang ,  Pyong-Su Kwag ,  Young-Jun Kwon ,  Min-Ki Na ,  Sung-Kun Park ,  Donghyun Woo ,  Cha-Young Lee ,  Ho-Ryeong Lee

IPC: H01L31/102 ,  H01L27/146 ,  H01L29/04 ,  H01L29/16 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L27/14614 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L29/04 ,  H01L29/16 ,  H01L29/511 ,  H01L29/7827

Abstract: An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.

公开(公告)号：US09773831B1

公开(公告)日：2017-09-26

申请号：US15258006

申请日：2016-09-07

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang ,  Young-Hun Choi

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor having a lower device, an upper devise, and a TSV structure is provides. The lower device may include a lower substrate, a lower TSV pad, and a lower interlayer insulating layer. The lower TSV pad may be formed over the lower substrate. The lower interlayer insulating layer may cover the lower TSV pad. The upper device may include an upper substrate, an upper TSV pad, and an upper interlayer insulating layer. The upper TSV pad may be formed over the upper substrate. The upper interlayer insulating layer may cover the upper TSV pad. The TSV structure may vertically pass through the upper device and electrically connect the upper TSV pad to the lower TSV pad. The upper TSV pad may include an upper opening. The lower TSV pad may include a unit pad and a lower opening. The unit pad may be exposed through the upper opening and contacts the TSV structure in a top view.