公开(公告)号：US20170299809A1

公开(公告)日：2017-10-19

申请号：US15132408

申请日：2016-04-19

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Frédéric BOEUF ,  Charles BAUDOT

IPC: G02B6/12 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48

CPC classification number: G02B6/12004 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L24/14 ,  H01L2924/00014 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2224/13099

Abstract: An electro-optic device may include a substrate layer, and a first photonic layer over the substrate layer and having a first photonic device. The electro-optic device may include a second photonic layer over the first photonic layer and having a second photonic device. The electro-optic device may include a dielectric layer over the second photonic layer, and a first electrically conductive via extending through the dielectric layer and the second photonic layer to couple to the first photonic device, and a second electrically conductive via extending through the dielectric layer and coupling to the second photonic device. The electro-optic device may include a third electrically conductive via extending through the substrate layer, the second photonic layer, and the first photonic layer to couple to the substrate layer.

公开(公告)号：US20170192170A1

公开(公告)日：2017-07-06

申请号：US14984563

申请日：2015-12-30

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Charles BAUDOT ,  Alain CHANTRE ,  Sébastien CREMER

IPC: G02B6/122 ,  G02B6/42 ,  G02B6/34 ,  G02B6/136 ,  G02B6/132

CPC classification number: G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B6/34 ,  G02B6/4201 ,  G02B6/4214 ,  G02B2006/12147

Abstract: A method is for making a photonic chip including EO devices having multiple thicknesses. The method may include forming a first semiconductor layer over a semiconductor film, forming a second semiconductor layer over the first semiconductor layer, and forming a mask layer over the second semiconductor layer. The method may include performing a first selective etching of the mask layer to provide initial alignment trenches, performing a second etching, aligned with some of the initial alignment trenches and using the first semiconductor layer as an etch stop, to provide multi-level trenches, and filling the multi-level trenches to make the EO devices having multiple thicknesses.

公开(公告)号：US20170059893A1

公开(公告)日：2017-03-02

申请号：US14836011

申请日：2015-08-26

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS SA

Inventor： Patrick LEMAITRE ,  Jean-Francois CARPENTIER ,  Charles BAUDOT ,  Jean-Robert MANOUVRIER

IPC: G02F1/025 ,  G02B6/293

CPC classification number: G02F1/225 ,  G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2203/15

Abstract: An electro-optic (E/O) device includes an asymmetric optical coupler having an input and first and second outputs, a first optical waveguide arm coupled to the first output of the first asymmetric optical coupler, and a second optical waveguide arm coupled to the second output of the first asymmetric optical coupler. At least one E/O amplitude modulator is coupled to at least one of the first and second optical waveguide arms. An optical combiner is coupled to the first and second optical waveguide arms downstream from the at least one E/O amplitude modulator.

Abstract translation: 电光（E / O）装置包括具有输入和第一和第二输出的不对称光耦合器，耦合到第一非对称光耦合器的第一输出的第一光波导臂和耦合到第一和第二输出的第二光波导臂 第二非对称光耦合器的第二输出。 至少一个E / O振幅调制器耦合到第一和第二光波导臂中的至少一个。 光合成器耦合到至少一个E / O振幅调制器下游的第一和第二光波导臂。

公开(公告)号：US20150260918A1

公开(公告)日：2015-09-17

申请号：US14643662

申请日：2015-03-10

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Charles BAUDOT

IPC: G02B6/28 ,  G02B6/34 ,  G02B6/125

CPC classification number: G02B6/2813 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/1228 ,  G02B6/125 ,  G02B6/2835 ,  G02B6/34 ,  G02B6/43 ,  G02B2006/12097 ,  G02B2006/12154 ,  G02B2006/12159 ,  Y10T29/49826

Abstract: A multi-mode interference device may include a body having an optical axis and configured to generate a stationary optical interference pattern from an incoming optical wave. The body may include ribs being parallel to the optical axis and being spaced apart to define a pitch and cause an optical coupling between the ribs.

Abstract translation: 多模干涉装置可以包括具有光轴并被配置为从入射光波产生固定光学干涉图案的主体。 主体可以包括平行于光轴并且间隔开以限定间距并且引起肋之间的光学联接的肋。

公开(公告)号：US20230015854A1

公开(公告)日：2023-01-19

申请号：US17932623

申请日：2022-09-15

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Jean-Francois CARPENTIER ,  Charles BAUDOT

IPC: G02B6/43 ,  G02B6/12 ,  G02B6/13 ,  G02B6/42

Abstract: A photonic system includes a first photonic circuit having a first face and a second photonic circuit having a second face. The first photonic circuit comprises first wave guides, and, for each first wave guide, a second wave guide covering the first wave guide, the second wave guides being in contact with the first face and placed between the first face and the second face, the first wave guides being located on the side of the first face opposite the second wave guides. The second photonic circuit comprises, for each second wave guide, a third wave guide covering the second wave guide. The first photonic circuit comprises first positioning devices projecting from the first face and the second photonic circuit comprises second positioning devices projecting from the second face, at least one of the first positioning devices abutting one of the second positioning devices in a first direction.

公开(公告)号：US20190285799A1

公开(公告)日：2019-09-19

申请号：US16295929

申请日：2019-03-07

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Sylvain GUERBER ,  Charles BAUDOT

IPC: G02B6/122

Abstract: An optical waveguide is configured to propagate a light signal. Metal vias are arranged along and on either side of a portion of the optical waveguide. Additional metal vias are further arranged along and on either side of the optical waveguide both upstream and downstream of the portion of the optical waveguide. The metal vias and additional metal vias are oriented orthogonal to a same plane, the same plane being orthogonal to a transverse cross-section of the portion of the optical waveguide.

公开(公告)号：US20190235166A1

公开(公告)日：2019-08-01

申请号：US16374214

申请日：2019-04-03

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Charles BAUDOT

IPC: G02B6/125 ,  G02B6/122 ,  G02B6/136

CPC classification number: G02B6/125 ,  G02B6/1228 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/121 ,  G02B2006/12173 ,  G02B2006/12176

Abstract: A photonic integrated device includes a first waveguide and a second waveguide. The first and second waveguides are mutually coupled at a junction region which includes a bulge region. The bulge region is defined two successive etching operations using two distinct etch masks, where the first etching operation is a partial etch and the second etching operation is a complete etch.

公开(公告)号：US20170075148A1

公开(公告)日：2017-03-16

申请号：US15084645

申请日：2016-03-30

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Charles BAUDOT ,  Maurin DOUIX ,  Frédéric BOEUF ,  Sébastien CREMER

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2001/0151

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

Abstract translation: E / O相位调制器可以包括具有绝缘衬底，单晶硅条和相同厚度的多晶硅条的波导，并且在绝缘衬底之上掺杂相反导电类型，并且在单晶之间的绝缘界面层 硅带和多晶硅条。 单晶硅带和多晶硅条中的每一个可以通过相应的延伸部横向连续，并且相应的电触点耦合到每个延伸部。

公开(公告)号：US20160233641A1

公开(公告)日：2016-08-11

申请号：US14945859

申请日：2015-11-19

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Alain CHANTRE ,  Charles BAUDOT ,  Sébastien CREMER

IPC: H01S5/026 ,  H01S5/22 ,  H01S5/125

CPC classification number: H01S5/026 ,  G02B6/12004 ,  G02B6/1225 ,  G02B6/132 ,  G02B6/136 ,  H01S5/021 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0267 ,  H01S5/0268 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0656 ,  H01S5/1032 ,  H01S5/1035 ,  H01S5/125 ,  H01S5/22 ,  H01S5/2206

Abstract: A photonic integrated circuit includes a first insulating region encapsulating at least one metallization level, a second insulating region at least partially encapsulating a gain medium of a laser source, and a stacked structure placed between the two insulating regions. The stacked structure includes a first polycrystalline or single-crystal silicon layer, a second polycrystalline or single-crystal silicon layer, an intermediate layer optically compatible with the wavelength of the laser source and selectively etchable relative to silicon and that separates the first layer from a first portion of the second layer, and the gain medium facing at least one portion of the first layer. The first layer, the intermediate layer, and the first portion of the second layer form an assembly containing a resonant cavity and a waveguide, which are optically coupled to the gain medium, and a second portion of the second layer containing at least one other photonic component.

Abstract translation: 光子集成电路包括封装至少一个金属化水平的第一绝缘区域，至少部分地封装激光源的增益介质的第二绝缘区域和放置在两个绝缘区域之间的层叠结构。 层叠结构包括第一多晶或单晶硅层，第二多晶或单晶硅层，与激光源的波长光学兼容并且可相对于硅选择性地蚀刻的中间层，并且将第一层与 所述第二层的第一部分和所述增益介质面向所述第一层的至少一部分。 第一层，中间层和第二层的第一部分形成包含谐振腔和波导的组件，光学耦合到增益介质，第二层的第二部分包含至少一个其他光子 零件。