Abstract:
An oscillator device includes: a structural layer extending over a first side of a semiconductor substrate; a semiconductor cap set on the structural layer; a coupling region extending between and hermetically sealing the structural layer and the cap and forming a cavity within the oscillator device; first and second conductive paths extending between the substrate and the structural layer; first and second conductive pads housed in the cavity and electrically coupled to first terminal portions of the first and second conductive paths by first and second connection regions, respectively, which extend through and are insulated from the structural layer; a piezoelectric resonator having first and second ends electrically coupled, respectively, to the first and second conductive pads, and extending in the cavity; and third and fourth conductive pads positioned outside the cavity and electrically coupled to second terminal portions of the first and second conductive paths.
Abstract:
An electrostatically actuated oscillating structure includes a first stator subregion, a second stator subregion, a first rotor subregion and a second rotor subregion. Torsional elastic elements mounted to the first and second rotor subregions define an axis of rotation. A mobile element is coupled to the torsional elastic elements. The stator subregions are electrostatically coupled to respective regions of actuation on the mobile element. The stator subregions exhibit an element of structural asymmetry such that the electrostatic coupling surface between the first stator subregion and the first actuation region differs from the electrostatic coupling surface between the second stator subregion and the second actuation region.
Abstract:
An electrostatically actuated oscillating structure includes a first stator subregion, a second stator subregion, a first rotor subregion and a second rotor subregion. Torsional elastic elements mounted to the first and second rotor subregions define an axis of rotation. A mobile element is coupled to the torsional elastic elements. The stator subregions are electrostatically coupled to respective regions of actuation on the mobile element. The stator subregions exhibit an element of structural asymmetry such that the electrostatic coupling surface between the first stator subregion and the first actuation region differs from the electrostatic coupling surface between the second stator subregion and the second actuation region.
Abstract:
A microelectromechanical-acoustic-transducer assembly has: a first die integrating a MEMS sensing structure having a membrane, which has a first surface in fluid communication with a front chamber and a second surface, opposite to the first surface, in fluid communication with a back chamber of the microelectromechanical acoustic transducer, is able to undergo deformation as a function of incident acoustic-pressure waves, and faces a rigid electrode so as to form a variable-capacitance capacitor; a second die, integrating an electronic reading circuit operatively coupled to the MEMS sensing structure and supplying an electrical output signal as a function of the capacitive variation; and a package, housing the first die and the second die and having a base substrate with external electrical contacts. The first and second dice are stacked in the package and directly connected together mechanically and electrically; the package delimits at least one of the front and back chambers.
Abstract:
An electrostatically actuated oscillating structure includes a first stator subregion, a second stator subregion, a first rotor subregion and a second rotor subregion. Torsional elastic elements mounted to the first and second rotor subregions define an axis of rotation. A mobile element is coupled to the torsional elastic elements. The stator subregions are electrostatically coupled to respective regions of actuation on the mobile element. The stator subregions exhibit an element of structural asymmetry such that the electrostatic coupling surface between the first stator subregion and the first actuation region differs from the electrostatic coupling surface between the second stator subregion and the second actuation region.
Abstract:
Described herein is a semiconductor integrated device assembly, which envisages: a package defining an internal space; a first die including semiconductor material; and a second die, distinct from the first die, also including semiconductor material; the first die and the second die are coupled to an inner surface of the package facing the internal space. The second die is shaped so as to partially overlap the first die, above the inner surface, with a portion suspended in cantilever fashion above the first die, by an overlapping distance.
Abstract:
Described herein is an assembly for a MEMS sensor device, which envisages: a first body made of semiconductor material, integrating a micromechanical detection structure at a first main face thereof; a cap element, set stacked on the first main face of the first body, above the micromechanical detection structure; and an adhesion structure set between the first body and the cap element, defining a gap in a position corresponding to the micromechanical detection structure. At least one first opening is defined through the adhesion structure in fluidic communication with the gap.
Abstract:
Described herein is a semiconductor integrated device assembly, which envisages: a package defining an internal space; a first die including semiconductor material; and a second die, distinct from the first die, also including semiconductor material; the first die and the second die are coupled to an inner surface of the package facing the internal space. The second die is shaped so as to partially overlap the first die, above the inner surface, with a portion suspended in cantilever fashion above the first die, by an overlapping distance.
Abstract:
A magnetic-field sensor includes: a chip including a substrate having a first surface and an insulating layer covering the first surface; first and second magnetoresistors each extending into the insulating layer and having a main axis of magnetization and a secondary axis of magnetization; a first magnetic-field generator configured to generate a first magnetic field having field lines along the main axis of magnetization of the first magnetoresistor; a second magnetic-field generator configured to generate a second magnetic field having field lines along the main axis of magnetization of the second magnetoresistor. The main axes of magnetization extending transversely to each other and the secondary axes of magnetization extending transversely to each other. The first and second magnetoresistors extend into the insulating layer at a first distance and a second distance, respectively, that differ from one another, from the first surface.
Abstract:
A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.