Oscillator device and manufacturing process of the same
    11.
    发明授权
    Oscillator device and manufacturing process of the same 有权
    振荡器和制造工艺相同

    公开(公告)号:US08988155B2

    公开(公告)日:2015-03-24

    申请号:US13689430

    申请日:2012-11-29

    Abstract: An oscillator device includes: a structural layer extending over a first side of a semiconductor substrate; a semiconductor cap set on the structural layer; a coupling region extending between and hermetically sealing the structural layer and the cap and forming a cavity within the oscillator device; first and second conductive paths extending between the substrate and the structural layer; first and second conductive pads housed in the cavity and electrically coupled to first terminal portions of the first and second conductive paths by first and second connection regions, respectively, which extend through and are insulated from the structural layer; a piezoelectric resonator having first and second ends electrically coupled, respectively, to the first and second conductive pads, and extending in the cavity; and third and fourth conductive pads positioned outside the cavity and electrically coupled to second terminal portions of the first and second conductive paths.

    Abstract translation: 振荡器装置包括:在半导体衬底的第一侧上延伸的结构层; 设置在结构层上的半导体盖; 耦合区域,其在所述结构层和所述盖之间延伸并且密封所述结构层和所述盖并在所述振荡器装置内形成空腔; 在基板和结构层之间延伸的第一和第二导电路径; 第一和第二导电焊盘,其容纳在所述空腔中,并且分别通过延伸穿过所述第一和第二导电路径并与所述结构层绝缘的第一和第二连接区域电连接到所述第一和第二导电路径的第一端子部分; 压电谐振器,其具有分别电耦合到第一和第二导电焊盘并且在空腔中延伸的第一和第二端; 以及第三和第四导电焊盘,其位于腔的外部并电耦合到第一和第二导电路径的第二端子部分。

    SEMICONDUCTOR INTEGRATED DEVICE ASSEMBLY AND RELATED MANUFACTURING PROCESS
    16.
    发明申请
    SEMICONDUCTOR INTEGRATED DEVICE ASSEMBLY AND RELATED MANUFACTURING PROCESS 有权
    半导体集成器件组件及相关制造工艺

    公开(公告)号:US20130334627A1

    公开(公告)日:2013-12-19

    申请号:US13916416

    申请日:2013-06-12

    Abstract: Described herein is a semiconductor integrated device assembly, which envisages: a package defining an internal space; a first die including semiconductor material; and a second die, distinct from the first die, also including semiconductor material; the first die and the second die are coupled to an inner surface of the package facing the internal space. The second die is shaped so as to partially overlap the first die, above the inner surface, with a portion suspended in cantilever fashion above the first die, by an overlapping distance.

    Abstract translation: 这里描述的是一种半导体集成器件组件,其设想为:限定内部空间的封装; 包括半导体材料的第一裸片; 以及与第一模具不同的第二模具,还包括半导体材料; 第一模具和第二模具耦合到面向内部空间的封装的内表面。 第二模具成形为使得第一模具在内表面上部分地以悬臂方式悬挂在第一模具上方的部分重叠距离。

    INTEGRATED MULTILAYER MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF
    19.
    发明申请
    INTEGRATED MULTILAYER MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF 有权
    集成多层磁阻传感器及其制造方法

    公开(公告)号:US20140015525A1

    公开(公告)日:2014-01-16

    申请号:US13929635

    申请日:2013-06-27

    CPC classification number: G01R33/096 G01R33/0017 G01R33/0052 G01R33/0206

    Abstract: A magnetic-field sensor includes: a chip including a substrate having a first surface and an insulating layer covering the first surface; first and second magnetoresistors each extending into the insulating layer and having a main axis of magnetization and a secondary axis of magnetization; a first magnetic-field generator configured to generate a first magnetic field having field lines along the main axis of magnetization of the first magnetoresistor; a second magnetic-field generator configured to generate a second magnetic field having field lines along the main axis of magnetization of the second magnetoresistor. The main axes of magnetization extending transversely to each other and the secondary axes of magnetization extending transversely to each other. The first and second magnetoresistors extend into the insulating layer at a first distance and a second distance, respectively, that differ from one another, from the first surface.

    Abstract translation: 磁场传感器包括:芯片,其包括具有覆盖第一表面的第一表面和绝缘层的基板; 第一和第二磁阻器各自延伸到绝缘层中并且具有主轴的磁化和次级磁化轴; 第一磁场发生器,被配置为产生具有沿着所述第一磁电阻的主磁化轴的场线的第一磁场; 第二磁场发生器被配置为产生具有沿着第二磁阻的主磁化轴的场线的第二磁场。 磁化的主轴线彼此横向延伸,磁化的副轴相互横向延伸。 第一和第二磁阻器分别从第一表面延伸到彼此不同的第一距离和第二距离处的绝缘层。

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