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11.发明申请公开(公告)号：US20170236994A1
公开(公告)日：2017-08-17
申请号：US15582124
申请日：2017-04-28
Applicant: STMicroelectronics S.R.L.
Inventor： Angela Cimmino , Giovanna Salzillo , Valeria Casuscelli , Andrea Di Matteo
IPC: H01L41/187 , C04B35/626 , H01L41/35 , C04B35/64 , C04B35/624 , C04B35/49 , C04B35/622
CPC classification number: H01L41/1871 , C04B35/465 , C04B35/4682 , C04B35/49 , C04B35/62218 , C04B35/62222 , C04B35/624 , C04B35/6264 , C04B35/62675 , C04B35/62685 , C04B35/6325 , C04B35/63444 , C04B35/63488 , C04B35/64 , C04B2235/3208 , C04B2235/3215 , C04B2235/3232 , C04B2235/3234 , C04B2235/3236 , C04B2235/3244 , C04B2235/3249 , C04B2235/3251 , C04B2235/3262 , C04B2235/3293 , C04B2235/441 , C04B2235/449 , C04B2235/6567 , C04B2235/72 , C04B2235/768 , C04B2235/81 , C04B2235/96 , C08K3/08 , C09D1/00 , C09D7/61 , H01L41/35
Abstract: The present disclosure relates to a precursor solution for the preparation of a ceramic of the BZT-αBXT type, where X is selected from Ca, Sn, Mn, and Nb, and α is a molar fraction selected in the range between 0.10 and 0.90, said solution comprising: 1) at least one barium precursor compound; 2) a precursor compound selected from the group consisting of at least one calcium compound, at least one tin compound, at least one manganese compound, and at least one niobium compound; 3) at least one anhydrous precursor compound of zirconium; 4) at least one anhydrous precursor compound of titanium; 5) a solvent selected from the group consisting of a polyol and mixtures of a polyol and a secondary solvent selected from the group consisting of alcohols, carboxylic acids, ketones, and mixtures thereof; and 6) a chelating agent, as well as method of using the same.
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Patent Agency Ranking
公开(公告)号：US09588075B2
公开(公告)日：2017-03-07
申请号：US14200576
申请日：2014-03-07
Applicant: STMicroelectronics S.r.l.
IPC: C25D17/00 , G01N27/30 , G01N27/333 , G01N27/416
CPC classification number: G01N27/302 , G01N27/3335 , G01N27/4167
Abstract: The present disclosure relates to a sensor for detecting hydrogen ions in an aqueous solution comprising a support, a reference electrode, a working electrode and a counter electrode supported by said support, the reference electrode being made of a material comprising silver and silver chloride, the counter electrode being made of a conductive material. The working electrode comprises a substrate and a layer made of an inherently electrically conductive polymer of the polythiophene or polyaniline (PANI) or polypyrrole class.
Abstract translation: 本发明涉及一种用于检测水溶液中氢离子的传感器，包括载体，参比电极，工作电极和由所述载体支撑的对电极，参比电极由包含银和氯化银的材料制成， 对电极由导电材料制成。 工作电极包括基底和由聚噻吩或聚苯胺（PANI）或聚吡咯类的固有导电聚合物制成的层。
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13.发明授权Thin film transistors formed by organic semiconductors using a hybrid patterning regime 有权使用混合图案化方式由有机半导体形成的薄膜晶体管公开(公告)号：US09012259B2
公开(公告)日：2015-04-21
申请号：US14157097
申请日：2014-01-16
Applicant: STMicroelectronics S.r.l.
CPC classification number: H01L51/0545 , H01L51/0005 , H01L51/0023 , H01L51/0525
Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.
Abstract translation: 本公开描述了通过使用混合沉积/图案化方案在CMOS技术中形成底栅/底接触有机TFT的工艺策略。 为此，基于光刻工艺形成栅极电极，栅极电介质材料和漏极和源极电极，而通过使用空间选择性印刷工艺将有机半导体材料提供为最后层。
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公开(公告)号：US12058938B2
公开(公告)日：2024-08-06
申请号：US17722713
申请日：2022-04-18
Applicant: STMicroelectronics S.r.l.
Inventor： Maria Fortuna Bevilacqua , Flavio Francesco Villa , Rossana Scaldaferri , Valeria Casuscelli , Andrea Di Matteo , Dino Faralli
IPC: H10N30/30 , H02N2/18 , H10N30/01 , H10N30/03 , H10N30/06 , H10N30/082 , H10N30/853 , H10N30/87 , H10N30/88
CPC classification number: H10N30/308 , H02N2/186 , H10N30/01 , H10N30/03 , H10N30/06 , H10N30/082 , H10N30/304 , H10N30/8554 , H10N30/87 , H10N30/88
Abstract: A process for manufacturing a MEMS piezoelectric device includes: forming a membrane at a first surface of wafer of semiconductor material further having a second surface (the first and second surfaces being opposite along a vertical axis and extending parallel to a horizontal plane formed by first and second horizontal axes); forming a cavity within the wafer so that the membrane is suspended above the cavity; forming a piezoelectric material layer above a first surface of the membrane; forming an electrode arrangement in contact with the piezoelectric material layer; and forming a proof mass coupled to a second surface of the membrane opposite to the first surface along the vertical axis. The proof mass deforms the membrane in response to environmental mechanical vibrations. Forming the proof mass includes forming a connection element at a central position between the membrane and the proof mass in the direction of the vertical axis.
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公开(公告)号：US10429335B2
公开(公告)日：2019-10-01
申请号：US15658171
申请日：2017-07-24
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Fabrizio Porro , Valeria Casuscelli , Francesco Foncellino , Giovanna Salzillo , Luigi Giuseppe Occhipinti
Abstract: It is described an integrated gas sensor device comprising a silicon substrate and an oxide layer on the silicon substrate, as well as a working electrode, a counter electrode and a reference electrode, on the oxide layer, the working electrode and the counter electrode having respective active area exposed to an environmental air through at least a plurality of first openings and a plurality of second openings in the oxide layer in correspondence of the working electrode and of the counter electrode, further comprising an electrolyte layer portion and a hydrogel layer portion on the electrolyte layer portion, the electrolyte and hydrogel layer portions having a same size, suitable to cover at least the working, counter and reference electrodes, the hydrogel layer portion acting as a “quasi solid state” water reservoir.
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16.发明申请THIN FILM TRANSISTORS FORMED BY ORGANIC SEMICONDUCTORS USING A HYBRID PATTERNING REGIME 有权有机半导体使用混合布局方案形成的薄膜晶体管公开(公告)号：US20140199807A1
公开(公告)日：2014-07-17
申请号：US14157097
申请日：2014-01-16
Applicant: STMicroelectronics S.r.l.
IPC: H01L51/05
CPC classification number: H01L51/0545 , H01L51/0005 , H01L51/0023 , H01L51/0525
Abstract: The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.
Abstract translation: 本公开描述了通过使用混合沉积/图案化方案在CMOS技术中形成底栅/底接触有机TFT的工艺策略。 为此，基于光刻工艺形成栅极电极，栅极电介质材料和漏极和源极电极，而通过使用空间选择性印刷工艺将有机半导体材料提供为最后层。
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