Display device
    11.
    发明授权

    公开(公告)号:US12289972B2

    公开(公告)日:2025-04-29

    申请号:US17836386

    申请日:2022-06-09

    Abstract: Provided is display device comprising a substrate; a first semiconductor layer disposed on the substrate and having a plurality of transistors; a second semiconductor layer disposed on the first semiconductor layer and having a plurality of transistors; a first data conductive layer disposed on the second semiconductor layer; a first metal layer disposed on the first data conductive layer; and a second metal layer disposed on the first metal layer, wherein the first metal layer includes a first storage electrode and a first input electrode, the second metal layer includes a second storage electrode and a second input electrode, the first storage electrode and the second storage electrode configure a storage capacitor, and the first input electrode and the second input electrode configure an input capacitor.

    Substrate separation apparatus and method
    13.
    发明授权
    Substrate separation apparatus and method 有权
    基板分离装置及方法

    公开(公告)号:US09259910B2

    公开(公告)日:2016-02-16

    申请号:US14248983

    申请日:2014-04-09

    Abstract: Provided are a substrate separation apparatus and method. The substrate separation apparatus includes: an upper transfer part which fixes the upper substrate and transfers the upper substrate in a positive X-axis direction in an XY coordinate system composed of an X axis and a Y axis intersecting each other; and a lower transfer part which is installed under the upper transfer part with a gap therebetween and fixes and transfers the lower substrate, wherein the lower transfer part includes: a lower holding unit on which the lower substrate is placed; and a lower guide unit which includes path guides for guiding movement of the lower holding unit, wherein the path guides include a first path guide which is parallel to the X axis and a second path guide which is continuous with the first path guide and contacts a straight line having a negative slope in the XY coordinate system.

    Abstract translation: 提供了一种基板分离装置和方法。 基板分离装置包括:上部传送部,其固定上部基板,并在由X轴和Y轴相交的XY轴构成的XY坐标系中以正X轴方向传送上基板; 以及下部传送部件,其安装在上转印部分之下,其间具有间隙,并固定和传送下基板,其中下转印部分包括:下保持单元,下基板放置在下保持单元上; 以及下引导单元,其包括用于引导下保持单元的运动的路径引导件,其中,路径引导件包括平行于X轴的第一路径引导件和与第一路径引导件连续的第二路径引导件 在XY坐标系中具有负斜率的直线。

    Display device
    16.
    发明授权

    公开(公告)号:US11791253B2

    公开(公告)日:2023-10-17

    申请号:US17403853

    申请日:2021-08-16

    CPC classification number: H01L23/49838 H01L23/4985 H10K59/131

    Abstract: A display device comprises a pad terminal area and a first circuit board attached to the pad terminal area. The pad terminal area comprises a first pad terminal area having a first pad terminal row of first pad terminals and a second pad terminal area having a second pad terminal row of second pad terminals. The first circuit board comprises a first film having a first lead terminal row of first lead terminals and a second film having a second lead terminal row of second lead terminals. The first lead terminals are connected to the first pad terminals, the second lead terminals are connected to the second pad terminals, an end of the second film protrudes outward from an end of the first film, and the second pad terminal area overlaps an area between the end of the first film and the end of the second film.

    Display device and manufacturing method thereof

    公开(公告)号:US11114521B2

    公开(公告)日:2021-09-07

    申请号:US16562384

    申请日:2019-09-05

    Abstract: A display device includes a substrate and a pixel disposed on the substrate. The pixel includes a first transistor, a second transistor electrically connected to the first transistor, a third transistor electrically connected to the first transistor, and a light-emitting diode element electrically connected to at least one of the first transistor and the third transistor. The first transistor includes a first semiconductor member and a first gate electrode. The first semiconductor member includes an oxide semiconductor material. The first gate electrode is disposed between the first semiconductor member and the substrate. The second transistor includes a second semiconductor member and a second gate electrode. The second semiconductor member includes the oxide semiconductor material. The second semiconductor member is disposed between the second gate electrode and the substrate. The third transistor includes a third semiconductor member including silicon.

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