公开(公告)号：US11063110B2

公开(公告)日：2021-07-13

申请号：US16164796

申请日：2018-10-19

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Geol Lee ,  Kyeong Su Ko ,  Sang Won Shin ,  Dong Min Lee ,  Sang Gab Kim ,  Sang Woo Sohn ,  Hyun Eok Shin ,  Shin Il Choi

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/56 ,  H01L23/528 ,  H01L23/532 ,  G02F1/1362

Abstract: A conductive pattern for a display device includes a first layer including aluminum or an aluminum alloy disposed on a substrate and forming a first taper angle with the substrate, and a second layer disposed on the first layer forming a second taper angle with the first layer, in which the second taper angle is smaller than the first taper angle.

公开(公告)号：US09410234B2

公开(公告)日：2016-08-09

申请号：US14670403

申请日：2015-03-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju Kang ,  Sang Woo Sohn ,  Sang Won Shin ,  Dong Hee Lee ,  Chang Oh Jeong

IPC: C23C14/34 ,  C23C14/04

CPC classification number: C23C14/044 ,  H01J37/34 ,  H01J37/3447

Abstract: Provided are a sputtering device and a method of forming a layer using the same.The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process.

Abstract translation: 提供溅射装置和使用其形成层的方法。 使用溅射装置形成层的方法包括：将基板放置在室内; 使用溅射工艺将从面向衬底的靶发射的靶颗粒沉积在衬底上; 并且水平移动多个屏蔽杆，其安装在设置在基板和靶之间的屏蔽掩模中，并且在溅射过程期间沿着第一方向彼此分离。

公开(公告)号：US09340868B2

公开(公告)日：2016-05-17

申请号：US13760758

申请日：2013-02-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin Ho Hwang ,  Do-Hyun Kim ,  Sang Won Shin ,  Woo Song Kim ,  Chang-Oh Jeong

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  C23C16/455 ,  C23C14/00 ,  H01J37/32

CPC classification number: C23C14/352 ,  C23C14/0063 ,  C23C14/35 ,  C23C16/455 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/3411 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3438

Abstract: A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.

Abstract translation: 溅射装置包括：溅射靶; 面向溅射靶的衬底支撑件，并且衬底被设置在衬底支撑件上; 位于所述基板支撑体上的所述溅射靶和所述基板之间的阳极掩模; 以及位于阳极掩模和溅射靶之间的气体分配构件，并且包括彼此分离的多个气体分配管。 每个气体分配管包括限定在其中的多个排放孔，并且气体被排出到被配置为接收溅射装置的真空室。

公开(公告)号：US11199935B2

公开(公告)日：2021-12-14

申请号：US16863394

申请日：2020-04-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Gyung Min Baek ,  Hyun Eok Shin ,  Ju Hyun Lee ,  Joon Yong Park ,  Sang Won Shin

IPC: G06F3/02 ,  G06F3/041 ,  G06F3/044 ,  G06F3/0488 ,  H01L27/32 ,  H01L51/52 ,  H03K17/96 ,  H04M1/23 ,  H05K3/18

Abstract: An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.

公开(公告)号：US10684698B2

公开(公告)日：2020-06-16

申请号：US15813331

申请日：2017-11-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Gyung Min Baek ,  Hyun Eok Shin ,  Ju Hyun Lee ,  Joon Yong Park ,  Sang Won Shin

IPC: G06F3/02 ,  G06F3/0488 ,  H03K17/96 ,  H04M1/23 ,  H05K3/18 ,  H01L27/32 ,  G06F3/044 ,  H01L51/52 ,  G06F3/041

Abstract: An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.

公开(公告)号：US10546959B2

公开(公告)日：2020-01-28

申请号：US15662502

申请日：2017-07-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sung Wook Woo ,  Chang Ho Lee ,  Kyung Lae Rho ,  Doo Hyoung Lee ,  Sung Chan Jo ,  Sang Woo Sohn ,  Sang Won Shin ,  Soo Im Jeong ,  Chang Yong Jeong

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/10

Abstract: A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

公开(公告)号：US10510900B2

公开(公告)日：2019-12-17

申请号：US15686415

申请日：2017-08-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Eok Shin ,  Sang Won Shin ,  Dong Min Lee ,  Ju Hyun Lee ,  Shin Il Choi

IPC: H01L29/786 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32

Abstract: A display device according to an exemplary embodiment of the present invention includes: a substrate; a gate line and a data line that are provided on the substrate and are insulated from each other; a thin film transistor that is connected with the gate line and the data line; and a pixel electrode that is connected with the thin film transistor, in which at least one of the gate line and the data line includes a metal layer and a blocking layer that contacts the metal layer, and the blocking layer includes a first metal from a first group including molybdenum (Mo) and tungsten (W), a second metal from a second group including vanadium (V), niobium (Nb), zirconium (Zr), and tantalum (Ta), and oxygen (O).

公开(公告)号：US20190324337A1

公开(公告)日：2019-10-24

申请号：US16460829

申请日：2019-07-02

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hong Sick Park ,  Hyun Eok Shin ,  Joon Yong Park ,  Gyung Min Baek ,  Sang Won Shin ,  Ju Hyun Lee

IPC: G02F1/1362 ,  H01L21/3213 ,  H01L29/49 ,  G02F1/1368 ,  G02F1/1335 ,  H01L27/12 ,  H01L21/285

Abstract: A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoxTayOz, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.

公开(公告)号：US20190157367A1

公开(公告)日：2019-05-23

申请号：US16250642

申请日：2019-01-17

Applicant: Samsung Display Co., Ltd.

Inventor： DONG HEE LEE ,  Hyun Ju Kang ,  Sang Won Shin

IPC: H01L27/32 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78645 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.

公开(公告)号：US10032927B2

公开(公告)日：2018-07-24

申请号：US15374189

申请日：2016-12-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi Kishimoto ,  Yoshinori Tanaka ,  Yeon Keon Moon ,  Sang Woo Sohn ,  Sang Won Shin ,  Takayuki Fukasawa

IPC: H01L29/786 ,  H01L29/26 ,  H01J37/34 ,  H01L29/66 ,  C23C14/34 ,  H01L29/417

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.