公开(公告)号：US20240363712A1

公开(公告)日：2024-10-31

申请号：US18505279

申请日：2023-11-09

申请人： Samsung Electronics Co., Ltd.

发明人： Sang Moon Lee ,  Jin Bum Kim ,  Hyo Jin Kim ,  Yong Jun Nam ,  In Geon Hwang

IPC分类号： H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/42392 ,  H01L21/823807 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/775 ,  H01L29/78696

摘要： A semiconductor device may include a substrate, an active pattern extended in a first horizontal direction on the substrate, a plurality of nanosheets stacked and spaced apart from each other in a vertical direction on the active pattern, a gate electrode extended in a second horizontal direction different from the first horizontal direction on the active pattern, the gate electrode surrounding the plurality of nanosheets, a source/drain region on both sides of the plurality of nanosheets in the first horizontal direction on the active pattern, a gate insulating layer between the plurality of nanosheets and the gate electrode, and a doping layer between the plurality of nanosheets and the gate insulating layer, the doping layer including silicon (Si) or silicon germanium (SiGe) and doped with a doping material, at least a portion of the doping layer overlapping an uppermost nanosheet of the plurality of nanosheets in the first horizontal direction.

公开(公告)号：US11735663B2

公开(公告)日：2023-08-22

申请号：US17565650

申请日：2021-12-30

申请人： Samsung Electronics Co., Ltd.

发明人： Jin Bum Kim ,  Gyeom Kim ,  Da Hye Kim ,  Jae Mun Kim ,  Il Gyou Shin ,  Seung Hun Lee ,  Kyung In Choi

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/7849 ,  H01L21/02236 ,  H01L21/02532 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/78696

摘要： Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

公开(公告)号：US11233150B2

公开(公告)日：2022-01-25

申请号：US16910819

申请日：2020-06-24

申请人： Samsung Electronics Co., Ltd.

发明人： Jin Bum Kim ,  Gyeom Kim ,  Da Hye Kim ,  Jae Mun Kim ,  Il Gyou Shin ,  Seung Hun Lee ,  Kyung In Choi

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

摘要： Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

公开(公告)号：US10811541B2

公开(公告)日：2020-10-20

申请号：US16254842

申请日：2019-01-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jin Bum Kim ,  Hyoung Sub Kim ,  Seong Heum Choi ,  Jin Yong Kim ,  Tae Jin Park ,  Seung Hun Lee

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L21/30

摘要： A semiconductor device includes a gate electrode extending in a first direction on a substrate, a first active pattern extending in a second direction intersecting the first direction on the substrate to penetrate the gate electrode, the first active pattern including germanium, an epitaxial pattern on a side wall of the gate electrode, a first semiconductor oxide layer between the first active pattern and the gate electrode, and including a first semiconductor material, and a second semiconductor oxide layer between the gate electrode and the epitaxial pattern, and including a second semiconductor material. A concentration of germanium of the first semiconductor material may be less than a concentration of germanium of the first active pattern, and the concentration of germanium of the first semiconductor material may be different from a concentration of germanium of the second semiconductor material.

公开(公告)号：US10084049B2

公开(公告)日：2018-09-25

申请号：US15685255

申请日：2017-08-24

申请人： Samsung Electronics Co., Ltd.

发明人： Jin Bum Kim ,  Gyeom Kim ,  Seok Hoon Kim ,  Tae Jin Park ,  Jeong Ho Yoo ,  Cho Eun Lee ,  Hyun Jung Lee ,  Sun Jung Kim ,  Dong Suk Shin

IPC分类号： H01L27/12 ,  H01L29/417 ,  H01L27/092 ,  H01L29/51 ,  H01L29/423 ,  H01L21/02 ,  H01L21/3205

CPC分类号： H01L29/41725 ,  H01L21/02425 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/823814 ,  H01L21/823821 ,  H01L23/485 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/42356 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7848 ,  H01L2924/0002

摘要： A semiconductor device includes: a substrate having an active region; a gate structure disposed in the active region; source/drain regions respectively formed within portions of the active region disposed on both sides of the gate structure; a metal silicide layer disposed on a surface of each of the source/drain regions; and contact plugs disposed on the source/drain regions and electrically connected to the source/drain regions through the metal silicide layer, respectively. The metal silicide layer is formed so as to have a monocrystalline structure.