公开(公告)号：US20180294226A1

公开(公告)日：2018-10-11

申请号：US15946075

申请日：2018-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Boong Lee ,  Jung-Ho Do ,  Tae-Joong Song ,  Seung-Young Lee ,  Jong-Hoon Jung ,  Ji-Su Yu

IPC: H01L23/528 ,  H01L27/02 ,  H01L23/522 ,  H01L21/8234

Abstract: An integrated circuit including: a power rail including first and second conductive lines spaced apart from each other in a vertical direction, wherein the first and second conductive lines extend in parallel to each other in a first horizontal direction, and are electrically connected to each other, to supply power to a first standard cell, wherein the first and second conductive lines are disposed at a boundary of the first standard cell; and a third conductive line between the first and second conductive lines and extending in a second horizontal direction orthogonal to the first horizontal direction, to transfer an input signal or an output signal of the first standard cell.

公开(公告)号：US11955471B2

公开(公告)日：2024-04-09

申请号：US17584930

申请日：2022-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho Do ,  Dal-Hee Lee ,  Jin-Young Lim ,  Tae-Joong Song ,  Jong-Hoon Jung

IPC: H01L27/02 ,  G06F30/00 ,  G11C5/06 ,  G11C8/16 ,  G11C11/412 ,  H01L21/768 ,  H01L27/088 ,  H01L27/118

CPC classification number: H01L27/0207 ,  G06F30/00 ,  G11C5/063 ,  G11C8/16 ,  G11C11/412 ,  H01L21/76895 ,  H01L27/088 ,  H01L27/11807 ,  H01L2027/11875

Abstract: An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.

公开(公告)号：US11887914B2

公开(公告)日：2024-01-30

申请号：US18119560

申请日：2023-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Ho Do ,  Tae-Joong Song ,  Seung-Young Lee ,  Jong-Hoon Jung

IPC: H01L23/48 ,  H01L23/482 ,  H01L27/02 ,  H01L27/118 ,  H01L23/485 ,  H01L21/768 ,  G06F30/394 ,  G06F30/392

CPC classification number: H01L23/481 ,  G06F30/394 ,  H01L21/76895 ,  H01L23/482 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/11807 ,  G06F30/392 ,  H01L2027/11875

Abstract: An integrated circuit includes first and second active regions extending in a first direction, a first gate line extending in a second direction substantially perpendicular to the first direction and crossing the first and second active regions, and a first contact jumper including a first conductive pattern intersecting the first gate line above the first active region and a second conductive pattern extending in the second direction above the first gate line and connected to the first conductive pattern.

公开(公告)号：US11183497B2

公开(公告)日：2021-11-23

申请号：US16531327

申请日：2019-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Boong Lee ,  Jae-Ho Park ,  Sang-Hoon Baek ,  Ji-Su Yu ,  Seung-Young Lee ,  Jong-Hoon Jung

IPC: H01L27/092 ,  H01L29/06 ,  H01L27/02

Abstract: A semiconductor device includes first group active fins and a first diffusion prevention pattern. The first group active fins are spaced apart from each other in a second direction, and each of the first group active fins extends in a first direction different from the second direction on a first region of a substrate including the first region and a second region. The first diffusion prevention pattern extends on the first region of the substrate in the second direction through the first group active fins. The first group active fins include first and second active fins. The first diffusion prevention pattern extends through a central portion of the first active fin in the first direction to divide the first active fin, and extends through and contacts an end of the second active fin in the first direction.

公开(公告)号：US10803226B2

公开(公告)日：2020-10-13

申请号：US16589360

申请日：2019-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Ho Do ,  Jong-Hoon Jung ,  Seung-Young Lee ,  Tae-Joong Song

IPC: G06F30/392 ,  G03F7/20 ,  G03F1/70 ,  G06F30/20 ,  G06F30/39 ,  G06F30/398

Abstract: An integrated circuit includes: a lower layer including first and second lower patterns extending in a first direction; a first via arranged on the first lower pattern, and a second via arranged on the second lower pattern; a first upper pattern arranged on the first via; and a second upper pattern arranged on the second via, a first color is assigned to the first upper pattern, a second color is assigned to the second upper pattern, the first and second upper patterns are adjacent to each other in a second direction, and the first via is arranged in a first edge region of the first lower pattern, the first edge region being farther away from the second lower pattern than a second edge region of the first lower pattern, the second edge region being opposite to the first edge region.

公开(公告)号：US10319668B2

公开(公告)日：2019-06-11

申请号：US15865941

申请日：2018-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Ho Do ,  Tae-Joong Song ,  Seung-Young Lee ,  Jong-Hoon Jung

IPC: G06F17/50 ,  H01L23/48 ,  H01L27/02 ,  H01L23/482

Abstract: An integrated circuit includes first and second active regions extending in a first direction, a first gate line extending in a second direction substantially perpendicular to the first direction and crossing the first and second active regions, and a first contact jumper including a first conductive pattern intersecting the first gate line above the first active region and a second conductive pattern extending in the second direction above the first gate line and connected to the first conductive pattern.

公开(公告)号：US10163879B2

公开(公告)日：2018-12-25

申请号：US14874989

申请日：2015-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Hoon Jung

IPC: H01L23/535 ,  H01L27/02 ,  H01L23/522 ,  H01L23/528 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L21/8234

Abstract: According to an exemplary embodiment of the present inventive concept, a semiconductor device is provided as follows. An active region is disposed in one side of a gate line. A non-active region is disposed in the other side of the gate line. A jumper pattern crosses a top portion of the gate line, overlapping the active region and the non-active region. A boundary between the active region and the non-active region is underneath the gate line.

公开(公告)号：US11626348B2

公开(公告)日：2023-04-11

申请号：US17075141

申请日：2020-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Ho Do ,  Tae-Joong Song ,  Seung-Young Lee ,  Jong-Hoon Jung

IPC: H01L23/48 ,  H01L23/482 ,  H01L27/02 ,  H01L27/118 ,  H01L23/485 ,  H01L21/768 ,  G06F30/394 ,  G06F30/392

Abstract: An integrated circuit includes first and second active regions extending in a first direction, a first gate line extending in a second direction substantially perpendicular to the first direction and crossing the first and second active regions, and a first contact jumper including a first conductive pattern intersecting the first gate line above the first active region and a second conductive pattern extending in the second direction above the first gate line and connected to the first conductive pattern.

公开(公告)号：US20220149032A1

公开(公告)日：2022-05-12

申请号：US17584930

申请日：2022-01-26

Applicant: Samsung Electronics, Co., Ltd.

Inventor： Jung-Ho Do ,  Dal-Hee Lee ,  Jin-Young Lim ,  Tae-Joong Song ,  Jong-Hoon Jung

IPC: H01L27/02 ,  H01L27/118 ,  G11C5/06 ,  G06F30/00 ,  G11C8/16 ,  G11C11/412 ,  H01L21/768 ,  H01L27/088

Abstract: An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.

公开(公告)号：US20210013149A1

公开(公告)日：2021-01-14

申请号：US17037569

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Boong Lee ,  Jung-Ho Do ,  Tae-Joong Song ,  Seung-Young Lee ,  Jong-Hoon Jung ,  Ji-Su Yu

IPC: H01L23/528 ,  H01L27/02 ,  H01L23/522 ,  H01L21/8234 ,  H01L27/118 ,  G06F30/327 ,  G06F30/394

Abstract: An integrated circuit including: a power rail including first and second conductive lines spaced apart from each other in a vertical direction, wherein the first and second conductive lines extend in parallel to each other in a first horizontal direction, and are electrically connected to each other, to supply power to a first standard cell, wherein the first and second conductive lines are disposed at a boundary of the first standard cell; and a third conductive line between the first and second conductive lines and extending in a second horizontal direction orthogonal to the first horizontal direction, to transfer an input signal or an output signal of the first standard cell.