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    Semiconductor device
    11.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10685695B2

    公开(公告)日：2020-06-16

    申请号：US16405219

    申请日：2019-05-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chang Hoon Jeon ,  Yong Seok Kim ,  Jun Hee Lim

    IPC: G11C5/02 ,  G11C11/40 ,  G11C16/04 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582 ,  H01L29/49 ,  H01L29/51

    Abstract: A semiconductor device includes a memory cell region including memory cells arranged along channel holes, the channel holes being provided on a substrate to extend in a direction perpendicular to an upper surface of the substrate, and a peripheral circuit region disposed outside of the memory cell region and including low voltage transistors and high voltage transistors. The low voltage transistors include first transistors including a first gate dielectric layer and a first gate electrode layer including a metal, and the high voltage transistors include second transistors including a second gate dielectric layer having a dielectric constant lower than a dielectric constant of the first gate dielectric layer, and a second gate electrode layer including polysilicon.

    SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
    13.
    发明公开
    SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME 审中-公开

    公开(公告)号：US20240121963A1

    公开(公告)日：2024-04-11

    申请号：US18474307

    申请日：2023-09-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： So Hyun Lee ,  Kang-Oh Yun ,  Dong Jin Lee ,  Jun Hee Lim

    IPC: H10B43/40 ,  H10B43/27

    CPC classification number: H10B43/40 ,  H10B43/27

    Abstract: A semiconductor memory device includes: a substrate including a first region and a second region, the first region includes a peripheral circuit and a first active region (FAR), and the second region includes memory cell blocks. The FAR includes a FAR first extension extending in a first direction, a FAR second extension extending in a second direction, and a FAR third extension extending in a third direction. The FAR first extension, the FAR second extension, and the FAR third extension form an angle greater than 90 degrees relative to one another. The device includes a first pass transistor circuit configured to transmit driving signals, and the first pass transistor circuit includes a FAR first gate structure on the FAR first extension, a FAR second gate structure on the FAR second extension, a FAR third gate structure on the FAR third extension, and a first shared source/drain.

    Semiconductor device
    14.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10998301B2

    公开(公告)日：2021-05-04

    申请号：US16531778

    申请日：2019-08-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kohji Kanamori ,  Hyun Mog Park ,  Yong Seok Kim ,  Kyung Hwan Lee ,  Jun Hee Lim ,  Jee Hoon Han

    IPC: H01L25/18 ,  H01L23/00 ,  H01L27/11556 ,  H01L27/11582

    Abstract: A semiconductor device includes a first semiconductor structure including circuit devices and first bonding pads; and a second semiconductor structure connected to the first semiconductor structure, the second semiconductor structure including a base layer; a first memory cell structure including first gate electrodes and first channels penetrating through the first gate electrodes; a second memory cell structure including second gate electrodes and second channels penetrating through the second gate electrodes; bit lines between the first and the second memory cell structures, and electrically connected to the first and second channels in common; first and second conductive layers on the second surface of the base layer; a pad insulating layer having an opening exposing a portion of the second conductive layer; and second bonding pads disposed to correspond to the first bonding pads in a lower portion of the second memory cell structure.

    SEMICONDUCTOR DEVICE
    20.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200161301A1

    公开(公告)日：2020-05-21

    申请号：US16726322

    申请日：2019-12-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung Uk Han ,  Taek Yong Kim ,  Satoru Yamada ,  Jun Hee Lim ,  Ki Jae Hur

    IPC: H01L27/092 ,  H01L21/762 ,  H01L21/8238 ,  G11C11/408

    Abstract: A semiconductor device includes first and second active regions extending in a first direction on a substrate and spaced apart from each other in a second direction intersecting the first direction, wherein the first and second active regions overlaps with each other in the second direction, a third active region extending in the first direction on the substrate and spaced apart from the first active region in the second direction. The first active region is positioned between the second and third active regions in the second direction. The first and third active regions partially overlap in the second direction, and a device isolation film is configured to define the first to third active regions.

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