公开(公告)号：US20220238633A1

公开(公告)日：2022-07-28

申请号：US17370361

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kiyoung LEE ,  Kookrin CHAR ,  Byunghoon NA ,  Hahoon LEE ,  Dowon SONG

IPC: H01L49/02

Abstract: A thin film laminate structure, an integrated device including the same, and a method of manufacturing the thin film laminate structure are provided. The thin film laminate structure includes two or more dielectric layers, wherein at least one of the dielectric layers of the thin film laminate structure includes a compound represented by Formula 1 and having a perovskite-type crystal structure having a B/B′ composition ratio different from that of a remainder of the dielectric layers: AB1-xB′xO3   wherein, in Formula 1, A, B, B′, and x are the same as defined in the specification.

公开(公告)号：US20200058741A1

公开(公告)日：2020-02-20

申请号：US16662872

申请日：2019-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Eunkyu LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/16 ,  H01L29/12 ,  H01L27/15 ,  H01L27/146 ,  H01L27/144 ,  H01L31/0352 ,  H01L51/00 ,  H01L51/05 ,  H01L31/101 ,  H01L31/028 ,  H01L31/09

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US20180145190A1

公开(公告)日：2018-05-24

申请号：US15603796

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung LEE ,  Jinseong HEO ,  Jaeho LEE ,  Haeryong KIM ,  Seongjun PARK ,  Hyeonjin SHIN ,  Eunkyu LEE ,  Sanghyun JO

IPC: H01L31/0216 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/18 ,  G01N21/59

CPC classification number: H01L31/02161 ,  G01N21/59 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/035218 ,  H01L31/1804 ,  Y02E10/544 ,  Y02E10/547

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US20170338260A1

公开(公告)日：2017-11-23

申请号：US15668997

申请日：2017-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Seongjun PARK ,  Kiyoung LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Jaeho LEE

IPC: H01L27/146 ,  H01L31/0224 ,  H01L29/786 ,  H01L31/10 ,  H01L27/144

CPC classification number: H01L31/1075 ,  H01L27/144 ,  H01L27/14603 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/66015 ,  H01L29/6603 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0326 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/105 ,  H01L31/109 ,  H01L31/1136 ,  H01L31/18 ,  Y02E10/547

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

公开(公告)号：US20250072016A1

公开(公告)日：2025-02-27

申请号：US18942910

申请日：2024-11-11

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kiyoung LEE ,  Kookrin CHAR ,  Byunghoon NA ,  Hahoon LEE ,  Dowon SONG

IPC: H01G4/30 ,  H01G4/12

Abstract: A thin film laminate structure, an integrated device including the same, and a method of manufacturing the thin film laminate structure are provided. The thin film laminate structure includes two or more dielectric layers, wherein at least one of the dielectric layers of the thin film laminate structure includes a compound represented by Formula 1 and having a perovskite-type crystal structure having a B/B′ composition ratio different from that of a remainder of the dielectric layers: AB1-xB′xO3   wherein, in Formula 1, A, B, B′, and x are the same as defined in the specification.

公开(公告)号：US20230074895A1

公开(公告)日：2023-03-09

申请号：US17984877

申请日：2022-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin LEE ,  Kiyoung LEE ,  Yongsung KIM ,  Eunsun KIM

IPC: H01L29/51 ,  H01L27/11585 ,  H01L27/11502 ,  C01G23/00 ,  C01G35/00

Abstract: A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1-xA′xB1-yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

公开(公告)号：US20230063896A1

公开(公告)日：2023-03-02

申请号：US17705818

申请日：2022-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Euncheol DO ,  Byunghoon NA ,  Kiyoung LEE ,  Jooho LEE

IPC: H01G4/10 ,  H01L49/02 ,  H01G4/33

Abstract: Provided are a capacitor and a method for manufacturing the capacitor, the capacitor including: a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer, including a binary metal oxide, between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer, including an anionized layer, between the dielectric layer and at least one of the first thin-film electrode layer or the second thin-film electrode layer. The interlayer has a same type of crystal structure as and a different composition from the dielectric layer, and the anionized layer includes at least one of a monovalent cation, a divalent cation, or a trivalent cation.

公开(公告)号：US20220115432A1

公开(公告)日：2022-04-14

申请号：US17555977

申请日：2021-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Eunkyu LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Jinseong HEO

IPC: H01L27/146 ,  H01L31/074 ,  H01L31/0264

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US20220093746A1

公开(公告)日：2022-03-24

申请号：US17541871

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Eunkyu LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/16 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US20200161432A1

公开(公告)日：2020-05-21

申请号：US16749367

申请日：2020-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Kiyoung LEE ,  Seongjun PARK

IPC: H01L29/16 ,  H01L31/113 ,  H01L31/028 ,  H01L45/00 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/08 ,  H01L29/267 ,  H01L33/26 ,  H01L29/778

Abstract: Example embodiments relate to a graphene device, methods of manufacturing and operating the same, and an electronic apparatus including the graphene device. The graphene device is a multifunctional device. The graphene device may include a graphene layer and a functional material layer. The graphene device may have a function of at least one of a memory device, a piezoelectric device, and an optoelectronic device within the structure of a switching device/electronic device. The functional material layer may include at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, a piezoelectric material, a light emission material, and a photoactive material.