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公开(公告)号：US11132487B2
公开(公告)日：2021-09-28
申请号：US16856216
申请日：2020-04-23
发明人： Kyubin Han , Sangwook Kim
IPC分类号： G06F30/392 , H01L21/033
摘要： A layout of original pattern is rotated in a rotational direction to form a layout of rotation pattern. Vertices and segment points of the layout of rotation pattern are matched with ones of the reference points closest thereto, and the matched reference points are connected to form a layout of first modification pattern. A region of the layout of first modification pattern is enlarged to form a layout of second modification pattern. A layout of reference pattern having the same direction as the layout of rotation pattern is formed. A layout of target pattern is formed based on a region where the layouts of reference pattern and second modification pattern overlap. An optical proximity correction is performed on the layout of target pattern to form a layout of third modification pattern, which is rotated in a reverse rotational direction to form a layout of final pattern.
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公开(公告)号：US10824043B2
公开(公告)日：2020-11-03
申请号：US16134614
申请日：2018-09-18
发明人： Junghyun Park , Sangwook Kim , Sunil Kim
摘要： An optical modulation device and an apparatus including the same are provided. The optical modulation device may include a reflector, a nano-antenna array placed opposite to the reflector, and an active layer that is placed between the reflector and the nano-antenna array. The optical modulation device may further include a first insulating layer placed between the reflector and the active layer, a second insulating layer placed between the active layer and the nano-antenna array, and a wiring structure that electrically contacts the active layer. The wiring structure may be provided in at least one of a first place between the active layer and the first insulating layer and a second place between the active layer and the second insulating layer.
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公开(公告)号：US10452349B2
公开(公告)日：2019-10-22
申请号：US15263539
申请日：2016-09-13
发明人： Sangwook Kim , Hyunseok Shin , Seungnyun Kim , Yongsang Yun , Changryong Heo
摘要： The present disclosure provides an electronic device and methods for operating the electronic device. The electronic device may include: a housing having a coupling member removably attachable to an ear of a user; one or more microphones provided within the housing and configured to detect an external sound; at least one speaker provided within the housing; at least one communication circuit within the housing; a processor provided within the housing and electrically coupled to the one or more microphones, the at least one speaker, and the at least one communication circuit; and at least one memory provided within the housing, and electrically coupled to the processor. The memory may store instructions that cause, when executed, the processor to receive the detected external sound from the one or more microphones, to identify an direction of the external sound in relation to the user, to determine whether the direction of the external sound is within a predefined range, and to extract at least a portion of the external sound for further processing when the direction of the external sound is within the predefined range.
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公开(公告)号：US09836220B2
公开(公告)日：2017-12-05
申请号：US14791714
申请日：2015-07-06
发明人： Sung-Won Jeong , Sangwook Kim , Joonwon Lee , Jinkyu Jeong , Hwanju Kim
CPC分类号： G06F3/061 , G06F3/0659 , G06F3/0688 , G06F12/0284 , G06F12/08 , G06F2212/1016
摘要： A method of operating a data processing system includes transmitting process information indicating that a first process is classified as a critical process or a non-critical process to a kernel area, wherein the process information is generated in an application area, and the application area and the kernel area define a host. When the first process is classified as a critical process based on the process information, a first fastpath write signal is provided, using the kernel area, to a memory system to perform a fastpath write operation of first data for performing the first process. When the first process is classified as a non-critical process, a first slowpath write signal is provided to the memory system to perform a slowpath write operation of the first data. The fastpath write operation has a higher write speed than the slowpath write operation.
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公开(公告)号：US11973142B2
公开(公告)日：2024-04-30
申请号：US17888649
申请日：2022-08-16
发明人： Sangwook Kim , Yunseong Lee , Sanghyun Jo , Jinseong Heo
IPC分类号： H01L29/78 , H01L21/28 , H01L21/8234 , H01L27/088 , H01L29/51 , H01L29/66
CPC分类号： H01L29/78391 , H01L21/28185 , H01L21/823412 , H01L21/823418 , H01L21/823437 , H01L27/088 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/6684
摘要： An integrated circuit includes transistors respectively including channel layers in a substrate, source electrodes and drain electrodes respectively contacting both sides of the channel layers, gate electrodes on the channel layers, and ferroelectrics layers between the channel layers and the gate electrodes. Electrical characteristics of the ferroelectrics layers of at least two of the transistors are different. Accordingly, threshold voltages of the transistors are different from each other.
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公开(公告)号：US11824119B2
公开(公告)日：2023-11-21
申请号：US18060372
申请日：2022-11-30
发明人： Jinseong Heo , Sangwook Kim , Yunseong Lee , Sanghyun Jo
CPC分类号： H01L29/78391 , G11C11/223 , H01L29/40111 , H01L29/6684
摘要： A domain switching device includes a channel region, a source region and a drain region connected to the channel region, a gate electrode isolated from contact with the channel region, an anti-ferroelectric layer between the channel region and the gate electrode, a conductive layer between the gate electrode and the anti-ferroelectric layer to contact the anti-ferroelectric layer, and a barrier layer between the anti-ferroelectric layer and the channel region.
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公开(公告)号：US20230307553A1
公开(公告)日：2023-09-28
申请号：US18324638
申请日：2023-05-26
发明人： Jinseong Heo , Taehwan Moon , Hagyoul Bae , Seunggeol Nam , Sangwook Kim , Kwanghee Lee
CPC分类号： H01L29/86 , H10K10/50 , H10K19/00 , H10K19/201 , H10B69/00
摘要： A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.
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公开(公告)号：US11677025B2
公开(公告)日：2023-06-13
申请号：US17513050
申请日：2021-10-28
发明人： Yunseong Lee , Jinseong Heo , Sangwook Kim , Sanghyun Jo
IPC分类号： H01L29/78 , H01L29/51 , H01L29/423 , H01L21/02 , H01L29/66 , H01L29/08 , H01L21/28 , H10B51/30 , H01L27/1159
CPC分类号： H01L29/78391 , H01L21/022 , H01L21/0228 , H01L21/02175 , H01L29/0847 , H01L29/40111 , H01L29/42364 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/6684 , H01L21/02181 , H01L21/02189 , H01L27/1159
摘要： An electronic device includes a ferroelectric layer arranged on a channel region and a gate electrode arranged on the ferroelectric layer. The ferroelectric layer includes a plurality of first oxide monolayers and a second oxide monolayers that is arranged between the substrate and the gate electrode and include a material different from a material of the first oxide monolayers. The first oxide monolayers include oxide monolayers that are alternately formed and include materials different from one another.
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公开(公告)号：US11640980B2
公开(公告)日：2023-05-02
申请号：US17399175
申请日：2021-08-11
发明人： Kwanghee Lee , Sangwook Kim
IPC分类号： H01L29/423 , H01L27/088 , H01L29/78 , H01L29/06 , H01L29/24
摘要： A field-effect transistor includes a gate structure comprising a structure in which a first insulating layer, a first gate electrode, and a second insulating layer are sequentially stacked on a first conductive layer, the gate structure surrounding a first hole through the first insulating layer and exposing a part of the first conductive layer; a second conductive layer on the second insulating layer and surrounding a second hole connected to the first hole and exposing a part of the first conductive layer; a first gate insulating layer covering an inner wall of the gate structure exposed by the first hole; a semiconductor layer covering a part of the first conductive layer exposed through the first hole and the second hole, the first gate insulating layer, and the second conductive layer; a second gate insulating layer covering the semiconductor layer; and a second gate electrode filling the first and second holes.
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公开(公告)号：US11600712B2
公开(公告)日：2023-03-07
申请号：US16691772
申请日：2019-11-22
发明人： Sanghyun Jo , Sangwook Kim , Yunseong Lee , Jinseong Heo
摘要： A ferroelectric structure includes a first polarization enhancement film on a ferroelectric film, wherein the ferroelectric film has a first net polarization in a first direction oriented from the ferroelectric film toward the first polarization enhancement film. The first polarization enhancement film has a second net polarization in a second direction crossing the first direction.
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