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公开(公告)号：US11205679B2
公开(公告)日：2021-12-21
申请号：US16794845
申请日：2020-02-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Eunsun Noh , Jeong-Heon Park , Ung Hwan Pi
Abstract: A magnetic memory device includes a conductive line extending in a first direction, a bottom electrode provided on a portion of a bottom surface of the conductive line, a free layer and a pinned layer stacked on the conductive line, a spacer layer between the free layer and the pinned layer, and a top electrode provided on a portion of a top surface of the pinned layer. The conductive line, the free layer, the pinned layer and the spacer layer have side surfaces perpendicular to the first direction, and the side surfaces are aligned with each other.
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公开(公告)号：US10825497B2
公开(公告)日：2020-11-03
申请号：US16369869
申请日：2019-03-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Hoon Kim , Hee Ju Shin , Ung Hwan Pi
Abstract: A semiconductor device includes a storage layer including at least one first magnetic layer and a reference layer facing the storage layer and including at least one second magnetic layer. The device also includes a tunnel barrier layer between the storage layer and the reference layer. The device further includes at least one spin-orbit torque line adjacent the storage layer.
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公开(公告)号：US12245518B2
公开(公告)日：2025-03-04
申请号：US17490353
申请日：2021-09-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ung Hwan Pi , Seonggeon Park , Jeong-Heon Park , Sung Chul Lee
Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a pinned layer on the first magnetic layer, and a second magnetic layer vertically overlapping with the pinned layer with the first magnetic layer interposed between the pinned layer and the second magnetic layer. The first magnetic layer includes, a plurality of magnetic domains arranged in the first direction, and at least one magnetic domain wall between the plurality of magnetic domains, and a magnetization direction of the second magnetic layer is substantially parallel to a top surface of the first magnetic layer.
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公开(公告)号：US20230274772A1
公开(公告)日：2023-08-31
申请号：US18096089
申请日：2023-01-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , Jaechun Jeon , Andrea Migliorini , Ung Hwan Pi
CPC classification number: G11C11/1673 , G11C11/1675 , H10B61/00 , H10N50/80
Abstract: A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.
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15.发明公开公开(公告)号：US20230209838A1
公开(公告)日：2023-06-29
申请号：US18171527
申请日：2023-02-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ung Hwan Pi , Dongkyu Lee
IPC: H10B61/00 , H01L23/528 , H01F10/32 , G11C11/16 , H10N50/80
CPC classification number: H10B61/00 , H01L23/528 , H01F10/329 , G11C11/161 , H01F10/3254 , H10N50/80
Abstract: Disclosed is a magnetic memory device including a first magnetic pattern that extends in a first direction and has a magnetization direction fixed in one direction, and a plurality of second magnetic patterns that extend across the first magnetic pattern. The second magnetic patterns extend in a second direction intersecting the first direction and are spaced apart from each other in the first direction. Each of the second magnetic patterns includes a plurality of magnetic domains that are spaced apart from each other in the second direction.
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Patent Agency Ranking
公开(公告)号：US20210104661A1
公开(公告)日：2021-04-08
申请号：US16901866
申请日：2020-06-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung Chul Lee , Kwang Seok Kim , Jangeun Lee , Ung Hwan Pi
Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.
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公开(公告)号：US20210027822A1
公开(公告)日：2021-01-28
申请号：US17039455
申请日：2020-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Hoon KIM , Hee Ju Shin , Ung Hwan Pi
Abstract: A semiconductor device includes a storage layer including at least one first magnetic layer and a reference layer facing the storage layer and including at least one second magnetic layer. The device also includes a tunnel barrier layer between the storage layer and the reference layer. The device further includes at least one spin-orbit torque line adjacent the storage layer.
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公开(公告)号：US10862025B2
公开(公告)日：2020-12-08
申请号：US16434478
申请日：2019-06-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Joonmyoung Lee , Ung Hwan Pi , Eunsun Noh , Yong Sung Park
Abstract: A magnetic memory device includes a first magnetic tunnel junction pattern on a substrate, a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern, and a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern. The conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.
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公开(公告)号：US12165683B2
公开(公告)日：2024-12-10
申请号：US18096161
申请日：2023-01-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , Jaechun Jeon , Andrea Migliorini , Ung Hwan Pi
Abstract: A magnetic memory device includes a conductive line that extends in a first direction, and a magnetic track line that extends in the first direction on a top surface of the conductive line. The conductive line may include a first region having a first width in a second direction, and a second region having a second width in the second direction. The first direction and the second direction are parallel to the top surface of the conductive line and are perpendicular to each other. The second width may be greater than the first width. The magnetic track line includes first domains arranged in the first direction on the first region of the conductive line, and second domains arranged in the first direction on the second region of the conductive line. A size of each of the second domains may be less than a size of each of the first domains.
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公开(公告)号：US12119036B2
公开(公告)日：2024-10-15
申请号：US18096089
申请日：2023-01-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , Jaechun Jeon , Andrea Migliorini , Ung Hwan Pi
CPC classification number: G11C11/1673 , G11C11/1675 , H10B61/00 , H10N50/80
Abstract: A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.
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