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    UNIT PIXEL, IMAGE SENSOR, AND VEHICLE
    12.
    发明申请
    UNIT PIXEL, IMAGE SENSOR, AND VEHICLE 有权

    公开(公告)号：US20230076177A1

    公开(公告)日：2023-03-09

    申请号：US17840033

    申请日：2022-06-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jung Wook Lim ,  Young Gu Jin

    IPC: B60R1/22 ,  H01L27/146

    Abstract: A unit pixel includes a first photoelectric converter, a first transfer transistor disposed between to the first photoelectric converter and a first node, a connection transistor disposed between and connected to a second node and the first node, a second transfer transistor disposed between and connected to a third node and the second node, a second photoelectric converter connected to the third node, and a storage metal-oxide semiconductor (MOS) capacitor connected to the third node. The storage MOS capacitor stores charges from the second photoelectric converter. For a first time period, first charges accumulated in the first photoelectric converter are transferred to the first node, for a second time period, second charges accumulated in the first photoelectric converter are transferred to the first node and the second node, and for a third time period, third charges accumulated in the second photoelectric converter are transferred to the first to third nodes.

    3D image sensor
    13.
    发明授权
    3D image sensor 有权

    公开(公告)号：US10991748B2

    公开(公告)日：2021-04-27

    申请号：US16124226

    申请日：2018-09-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Min-Sun Keel ,  Doo Won Kwon ,  Hyun Surk Ryu ,  Young Chan Kim ,  Young Gu Jin

    IPC: H01L27/146 ,  H01L23/00 ,  H04N13/204 ,  G06T7/521 ,  H04N5/378

    Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

    Semiconductor devices including infrared sensor with infrared photodiode and color sensor with color photodiode
    14.
    发明授权
    Semiconductor devices including infrared sensor with infrared photodiode and color sensor with color photodiode 有权

    公开(公告)号：US10707261B2

    公开(公告)日：2020-07-07

    申请号：US16284319

    申请日：2019-02-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Gu Jin ,  Doo Won Kwon

    IPC: H01L27/146 ,  H04N5/33 ,  H04N9/04

    Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.

    Semiconductor devices including first sensor with infrared photodiode and second sensor with color photodiode
    15.
    发明授权
    Semiconductor devices including first sensor with infrared photodiode and second sensor with color photodiode 有权

    公开(公告)号：US10283554B2

    公开(公告)日：2019-05-07

    申请号：US15450451

    申请日：2017-03-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young Gu Jin ,  Doo Won Kwon

    IPC: H01L27/146 ,  H04N5/33 ,  H04N9/04

    Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.

    Image sensor and devices having the same
    17.
    发明授权
    Image sensor and devices having the same 有权
    图像传感器和具有相同功能的设备

    公开(公告)号：US09380242B2

    公开(公告)日：2016-06-28

    申请号：US14496445

    申请日：2014-09-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seoung Hyun Kim ,  Mun Hwan Kim ,  Chan Hyung Kim ,  Jung Bin Yun ,  Young Gu Jin ,  Seung Won Cha

    IPC: H04N5/378 ,  H04N5/3745 ,  H04N9/04 ,  H01L27/146

    CPC classification number: H04N5/37457 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14645 ,  H04N9/045

    Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.

    Abstract translation: 根据示例实施例的图像传感器包括第一行中的第一像素和第二像素。 第一像素包括在半导体衬底中的第一深度处的第一光电转换元件，并且第一光电转换元件被配置为将第一可见光光谱转换为第一光电荷，并且第二像素包括第二光电转换元件 所述第二光电转换元件与所述第一光电转换元件在垂直方向上至少部分地重叠，并且所述第二光电转换元件被配置为将第二可见光光谱转换为第二光可变光谱， 照片费。

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