公开(公告)号：US11043433B2

公开(公告)日：2021-06-22

申请号：US16803459

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-yoon Ryu ,  Chung-sam Jun ,  Yu-sin Yang ,  Yun-jung Jee ,  Gil-woo Song

IPC: G06K9/00 ,  H01L21/66 ,  G06K9/20 ,  G06K9/46 ,  H01L21/77

Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

公开(公告)号：US20200208964A1

公开(公告)日：2020-07-02

申请号：US16715258

申请日：2019-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Duck-mahn OH ,  Jong-an Kim ,  Si-hyeon Choi ,  Young-hoon Sohn ,  Yu-sin Yang ,  Chi-hoon Lee

IPC: G01B11/06

Abstract: A method for nondestructive measurement of an underlying layer thickness includes irradiating, with a pump laser pulse, a sample to induce generation of an acoustic wave in the sample such that the acoustic wave propagates through the sample over time, where the sample includes a substrate, an underlying layer on the substrate, and an overlying layer on the underlying layer and the underlying layer is isolated from an exterior of the sample by at least the overlying layer, irradiating the sample with a probe laser pulse after irradiating the sample with the pump laser pulse, determining a reflectance variation of the sample over time, based on monitoring a variation of a reflection of the probe laser pulse from the sample over time, to generate a first graph showing a variation of reflectance of the sample over time, and determining a thickness of the underlying layer based on the first graph.

公开(公告)号：US20190130552A1

公开(公告)日：2019-05-02

申请号：US15984774

申请日：2018-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-hoon Sohn ,  Sung-yoon Ryu ,  Yu-sin Yang

IPC: G06T7/00 ,  G01N21/95 ,  H01L21/66 ,  H01L21/027 ,  G03F1/38 ,  G03F1/36

Abstract: A method of inspecting a defect including dividing a semiconductor substrate including the plurality of dies into a plurality of inspection regions, each of the plurality of inspection regions having at least one die, the semiconductor substrate including a pattern provided thereon, obtaining an optical image from each of the plurality of inspection regions, obtaining differential images between a reference region, and comparison regions, the reference region being one of the plurality of inspection regions, the comparison regions being regions other than the reference region from among the plurality of inspection regions, determining an abnormal pixel by performing a signal analysis with respect to respective signal intensities of same-location pixels in the differential images, and designating one or more possible weak patterns by comparing the abnormal pixel with a design pattern may be provided.

公开(公告)号：US10001444B2

公开(公告)日：2018-06-19

申请号：US14955635

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang-woong Ko ,  Sung-yoon Ryu ,  Young-hoon Sohn ,  Gil-woo Song ,  Tae-heung Ahn ,  Hyoung-jo Jeon ,  Sang-kyeong Han ,  Masahiro Horie ,  Woo-seok Ko ,  Yu-sin Yang ,  Sang-kil Lee ,  Byeong-hwan Jeon

IPC: G01N21/88 ,  G01J4/00 ,  G01N21/21 ,  G01N21/956 ,  G01N21/95

CPC classification number: G01N21/8806 ,  G01J4/00 ,  G01J2004/001 ,  G01N21/21 ,  G01N21/211 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/213 ,  G01N2021/8848

Abstract: A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.

公开(公告)号：US20160261786A1

公开(公告)日：2016-09-08

申请号：US14959443

申请日：2015-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-ho Ahn ,  Yu-sin Yang ,  Yun-jung Jee ,  Woo-seok Ko

IPC: H04N5/232 ,  G06T7/00 ,  H04N5/225 ,  H04N13/02

CPC classification number: H04N5/23212 ,  G06T7/0004 ,  G06T2207/30148 ,  H04N5/2256 ,  H04N13/20

Abstract: Provided is a wafer inspection apparatus using three-dimensional (3D) images, which apparatus may acquire a 3D image by adjusting a focal position at a high speed, and inspect a wafer by using the 3D image so that a 3D inspection operation may be precisely performed on patterns formed on the wafer at a high speed. The wafer inspection apparatus may include a stage on which a wafer is disposed, an optical apparatus configured to acquire an image of a pattern formed on the wafer by using a scan method, a focus adjusting unit configured to change a focal position of light irradiated to the wafer according to a scan speed of the optical apparatus, and an image processor configured to integrate images corresponding to focal positions and generate and analyze 3D images.

Abstract translation: 提供了使用三维（3D）图像的晶片检查装置，该装置可以通过高速调节焦点位置来获取3D图像，并且通过使用3D图像来检查晶片，使得3D检查操作可以精确地 以高速度在晶片上形成的图案上进行。 晶片检查装置可以包括设置晶片的台，配置为通过使用扫描方法获取形成在晶片上的图案的图像的光学装置，配置为改变照射到的光的焦点位置的聚焦调整单元 根据所述光学装置的扫描速度的所述晶片，以及被配置为对与焦点位置相对应的图像进行积分并生成和分析3D图像的图像处理器。

公开(公告)号：US09261532B1

公开(公告)日：2016-02-16

申请号：US14694115

申请日：2015-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-woo Kim ,  Woo-seok Ko ,  Young-hwan Kim ,  Jeong-hoi Kim ,  Baek-man Sung ,  Hyung-su Son ,  Chae-ho Shin ,  Yu-sin Yang ,  Jae-youn Wi ,  Sang-kil Lee ,  Chung-sam Jun

IPC: G01Q60/40

CPC classification number: G01Q60/40 ,  G01Q70/06

Abstract: A conductive atomic force microscope including a plurality of probe structures each including a probe and a cantilever connected thereto, a power supplier applying a bias voltage, a current detector detecting a first current flowing between a sample object and each of the probes and a second current flowing between a measurement object and each of the probes, and calculating representative currents for the sample and measurement objects based on the first and second currents, respectively, and a controller calculating a ratio between representative currents of the sample object measured by each of the probe structures, calculating a scaling factor for scaling the representative current with respect to the measurement object measured by each of the probes, and determine a reproducible current measurement value based on the second measurement current and the scaling factor may be provided.

Abstract translation: 一种导电原子力显微镜，包括多个探针结构，每个探针结构包括探针和连接到其上的悬臂，施加偏置电压的电源，检测在样品物体和每个探针之间流动的第一电流的电流检测器和第二电流 在测量对象和每个探针之间流动，并且基于第一和第二电流分别计算样本和测量对象的代表性电流，以及控制器，计算由每个探针测量的样本对象的代表性电流之间的比率 计算相对于由每个探针测量的测量对象的代表性电流的缩放因子，并且可以提供基于第二测量电流和缩放因子来确定可重现的电流测量值。