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公开(公告)号：US10608173B2
公开(公告)日：2020-03-31
申请号：US16284439
申请日：2019-02-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yil-hyung Lee , Jong-Kyu Kim , Jongchul Park , Sang-Kuk Kim , Jongsoon Park , Hyeji Yoon , Woohyun Lee
Abstract: An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.
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公开(公告)号：US10121449B2
公开(公告)日：2018-11-06
申请号：US14591243
申请日：2015-01-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Soung-Kwan Kimn , Su-Hyun Kim , Dong-Hyun Jo , Dae-Sik Hwang , Seung-Ryong Kook , Jong-Kyu Kim
Abstract: An electronic device is provided comprising a processor configured to: identify one or more sink devices; for each sink device, generate a respective display data structure; for each sink device, generate a respective data stream, the respective data stream being generated by encoding content produced by one or more applications based on the respective display data structure of the sink device; and transmit, to each of the sink devices, that sink device's respective encoded data stream.
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13.发明授权公开(公告)号：US09912716B2
公开(公告)日：2018-03-06
申请号：US15184095
申请日：2016-06-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Heung-Ki Lee , Gil-Yoon Kim , Soung-Kwan Kim , Jong-Kyu Kim , Jong-Kyu Lim
IPC: H04N11/02 , H04L29/06 , H04N21/41 , H04N21/414 , H04N21/43 , H04N21/4363 , H04N21/4402 , H04N21/462
Abstract: A technique for transmitting a video stream between a first electronic device and a second electronic device is provided. The first device receives an encoded video stream and determines whether an encoding format of the encoded video stream is a format decodable by a second electronic device. If the format is decodable, the encoded video stream is transmitted without a re-encoding operation to the second device. The video stream is displayed at the first device delayed by a determined delay time enabling the video stream to be displayed at the second device substantially synchronized with the display at the first device.
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14.发明申请公开(公告)号：US20190272979A1
公开(公告)日：2019-09-05
申请号：US16413854
申请日：2019-05-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yil-Hyung Lee , Yoo-Chul Kong , Jong-Kyu Kim , Seok-Woo Nam , Jong-Soon Park , Kyoung-Sub Shin
Abstract: In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.
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公开(公告)号：US10361078B2
公开(公告)日：2019-07-23
申请号：US15661418
申请日：2017-07-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yil-hyung Lee , Jongchul Park , Jong-Kyu Kim , Jongsoon Park
IPC: H01L21/033 , H01L21/263 , H01L21/311
Abstract: A method of forming fine patterns includes forming an upper mask layer on a substrate, forming preliminary mask patterns on the upper mask layer, and forming upper mask patterns by etching the upper mask layer using the preliminary mask patterns as etch masks. Forming the upper mask patterns includes etching the upper mask layer by performing an etching process using an ion beam. The upper mask patterns include a first upper mask pattern formed under each of the preliminary mask patterns, and a second upper mask pattern formed between the preliminary mask patterns in a plan view and spaced apart from the first upper mask pattern.
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Patent Agency Ranking
16.发明授权公开(公告)号：US10199566B2
公开(公告)日：2019-02-05
申请号：US15220719
申请日：2016-07-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jung-Ik Oh , Jong-Kyu Kim , Jongchul Park , Gwang-Hyun Baek , Kyungrae Byun , Hyun-Woo Yang
Abstract: A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.
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公开(公告)号：US09997566B1
公开(公告)日：2018-06-12
申请号：US15602469
申请日：2017-05-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Kuk Kim , Jong-Kyu Kim , Jong-Chul Park , Jong-Soon Park , Hye-Ji Yoon , Woo-Hyun Lee
IPC: H01L43/12 , H01L27/22 , H01L43/02 , H01L43/08 , H01L29/423
CPC classification number: H01L27/228 , H01L27/222 , H01L29/4236 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Manufacturing an MRAM device may include forming an upper electrode on a magnetic tunnel junction stack, where the stack may include a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer that are sequentially formed on an insulating interlayer and a lower electrode contact on a substrate. The upper electrode may be formed on the middle electrode layer. An upper electrode protective structure may be formed to cover at least a sidewall and an upper surface of the upper electrode. The middle electrode layer, the magnetic tunnel junction layer and the lower electrode may be patterned by an etching process to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively. The upper electrode protective structure may isolate the upper electrode from exposure during the patterning, and the upper electrode protective structure may remain on the upper electrode subsequently to the patterning.
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公开(公告)号：US20180158867A1
公开(公告)日：2018-06-07
申请号：US15602469
申请日：2017-05-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Kuk KIM , Jong-Kyu Kim , Jong-Chul Park , Jong-Soon Park , Hye-Ji Yoon , Woo-Hyun Lee
CPC classification number: H01L27/228 , H01L27/222 , H01L29/4236 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: Manufacturing an MRAM device may include forming an upper electrode on a magnetic tunnel junction stack, where the stack may include a lower electrode layer, a magnetic tunnel junction layer and a middle electrode layer that are sequentially formed on an insulating interlayer and a lower electrode contact on a substrate. The upper electrode may be formed on the middle electrode layer. An upper electrode protective structure may be formed to cover at least a sidewall and an upper surface of the upper electrode. The middle electrode layer, the magnetic tunnel junction layer and the lower electrode may be patterned by an etching process to form a middle electrode, a magnetic tunnel junction pattern and a lower electrode, respectively. The upper electrode protective structure may isolate the upper electrode from exposure during the patterning, and the upper electrode protective structure may remain on the upper electrode subsequently to the patterning.
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19.发明授权公开(公告)号：US09905754B1
公开(公告)日：2018-02-27
申请号：US15630046
申请日：2017-06-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hye-Ji Yoon , Yoo-Chul Kong , Jong-Kyu Kim , Sang-Kuk Kim , Yil-Hyung Lee
CPC classification number: H01L43/12 , H01L27/222
Abstract: In a method of forming a pattern of a semiconductor device, a first mask layer and an anti-reflective coating layer may be sequentially formed on a substrate. A photoresist layer may be formed on the anti-reflective coating layer. The photoresist layer may be exposed and developed to form a first preliminary photoresist pattern. A first ion beam etching process may be performed on the first preliminary photoresist pattern to form a second preliminary photoresist pattern. A second ion beam etching process may be performed on the second preliminary photoresist pattern to form a photoresist pattern. A second incident angle of an ion beam in the second ion beam etching process may be greater than a first incident angle of an ion beam in the first ion beam etching process. The anti-reflective coating layer and the first mask layer may be etched using the photoresist pattern as an etching mask to form a mask structure.
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公开(公告)号：US09407895B2
公开(公告)日：2016-08-02
申请号：US14011085
申请日：2013-08-27
Applicant: Samsung Electronics Co. Ltd.
Inventor： You-Kyung Cho , Soung-Kwan Kimn , Jong-Kyu Kim , Tae-Hyung Kim , Jung-Wook Chai
CPC classification number: H04N9/87 , H04N5/765 , H04N5/783 , H04N21/41407 , H04N21/632
Abstract: A system for controlling a video is provided. The system includes a terminal which transmits a flush command to an external device to delete buffered data in a buffer of the external device when a search command for moving to a location of specific data of a video is generated while data of the video is streamed to the external device and which then transmits to the external device the specific data located in relation to the search command, and an external device which deletes the buffered data in the buffer when the flush command is received from the terminal while a video streamed from the terminal is reproduced and which buffers the specific data of the video received from the terminal in the buffer to be output.
Abstract translation: 提供了一种用于控制视频的系统。 该系统包括一个终端，当用于移动到视频的特定数据的位置的搜索命令生成视频的数据，同时将视频的数据流传输到外部设备的缓冲器中时，向外部设备发送刷新命令以删除外部设备的缓冲器中的缓冲数据， 外部设备，然后向外部设备发送与搜索命令相关的特定数据;以及外部设备，当从终端接收到视频流时，从终端接收到刷新命令时，删除缓冲器中的缓冲数据 被再现并且缓冲从缓冲器中的终端接收的视频的特定数据以被输出。
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