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公开(公告)号：US11183233B2
公开(公告)日：2021-11-23
申请号：US16566002
申请日：2019-09-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Yeop Baeck , Tae-Hyung Kim , Daeyoung Moon , Dong-Wook Seo , Inhak Lee , Hyunsu Choi , Taejoong Song , Jae-Seung Choi , Jung-Myung Kang , Hoon Kim , Jisu Yu , Sun-Yung Jang
IPC: G11C11/419 , G11C7/08 , H01L23/528 , H01L27/092 , H01L27/11
Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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公开(公告)号：US09099631B2
公开(公告)日：2015-08-04
申请号：US14594020
申请日：2015-01-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-In Yang , Tae-Hyung Kim , Si-Hyuk Lee , Sang-Yeob Song , Cheol-Soo Sone , Hak-Hwan Kim , Jin-Hyun Lee
CPC classification number: H01L33/62 , H01L33/0025 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
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公开(公告)号：US09293675B2
公开(公告)日：2016-03-22
申请号：US14594039
申请日：2015-01-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-In Yang , Tae-Hyung Kim , Si-Hyuk Lee , Sang-Yeob Song , Cheol-Soo Sone , Hak-Hwan Kim , Jin-Hyun Lee
CPC classification number: H01L33/62 , H01L33/0025 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
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公开(公告)号：US08975655B2
公开(公告)日：2015-03-10
申请号：US14483036
申请日：2014-09-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong-In Yang , Tae-Hyung Kim , Si-Hyuk Lee , Sang-Yeob Song , Cheol-Soo Sone , Hak-Hwan Kim , Jin-Hyun Lee
CPC classification number: H01L33/62 , H01L33/0025 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
Abstract translation: 半导体发光器件及其制造方法。 半导体发光器件包括依次堆叠在衬底上的第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，通过 基板与第一电极层电连接，第二触点通过基板，第一电极层和绝缘层与第二电极层连通。 第一电极层通过填充穿过第二电极层，第二半导体层和有源层的接触孔而电连接到第一半导体层，并且绝缘层围绕接触孔的内周表面以绝缘 来自第二电极层的第一电极层。
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公开(公告)号：US08877562B2
公开(公告)日：2014-11-04
申请号：US14253478
申请日：2014-04-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae-Hyung Kim , Cheol-soo Sone , Jong-in Yang , Sang-yeob Song , Si-hyuk Lee
CPC classification number: H01L33/38 , H01L33/0079 , H01L33/382 , H01L33/62 , H01L2224/16 , H01L2933/0066
Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.
Abstract translation: LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并连接到各个化合物层的第一和第二电极层。 绝缘层涂覆在不同于第一和第二电极层所在的区域中。 导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。 形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。 形成在另一个侧表面上的第二电极连接层连接到第二电极层。 通过在发光装置的相应侧表面上形成连接层，可以降低制造成本。
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Patent Agency Ranking
公开(公告)号：US11152058B2
公开(公告)日：2021-10-19
申请号：US16566002
申请日：2019-09-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Yeop Baeck , Tae-Hyung Kim , Daeyoung Moon , Dong-Wook Seo , Inhak Lee , Hyunsu Choi , Taejoong Song , Jae-Seung Choi , Jung-Myung Kang , Hoon Kim , Jisu Yu , Sun-Yung Jang
IPC: G11C11/419 , G11C7/08 , H01L23/528 , H01L27/092 , H01L27/11
Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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7.发明授权公开(公告)号：US10453521B2
公开(公告)日：2019-10-22
申请号：US15417807
申请日：2017-01-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Yeop Baeck , Tae-Hyung Kim , Daeyoung Moon , Dong-Wook Seo , Inhak Lee , Hyunsu Choi , Taejoong Song , Jae-Seung Choi , Jung-Myung Kang , Hoon Kim , Jisu Yu , Sun-Yung Jang
IPC: H01L27/11 , G11C11/419 , H01L23/528 , H01L27/092 , G11C7/08
Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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公开(公告)号：US09922724B2
公开(公告)日：2018-03-20
申请号：US15713936
申请日：2017-09-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae-Hyung Kim , Huichong Shin , Seokil Kim , Young Yun , Jonghyoung Lim , Youkeun Han
IPC: G11C7/10 , G11C29/34 , G06F3/06 , G06F12/1009 , G11C11/4093 , G11C11/4076 , G11C5/04
CPC classification number: G11C29/34 , G06F3/0613 , G06F3/0647 , G06F3/0656 , G06F3/0688 , G06F12/0868 , G06F12/1009 , G06F2212/1016 , G06F2212/1024 , G11C5/04 , G11C7/1045 , G11C7/109 , G11C11/4076 , G11C11/4093 , G11C29/06 , G11C29/26 , G11C2029/0407
Abstract: A method of operating a memory module including a plurality of semiconductor memory devices organized into a multi-rank memory on a DIMM and a memory buffer included on the DIMM, operatively coupled to the multi-rank memory, can be provided by mapping an access to the DIMM from a memory controller to semiconductor memory devices included in more than one rank within the multi-rank memory based on a mode register set signal and selectively linking rank control signals during a parallel bit test operation to the more than one rank within the multi-rank memory plurality of semiconductor memory devices.
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公开(公告)号：US20170092379A1
公开(公告)日：2017-03-30
申请号：US15207557
申请日：2016-07-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae-Hyung Kim , Huichong Shin , Seokil Kim , Young Yun , Jonghyoung Lim , Youkeun Han
IPC: G11C29/34 , G06F12/1009 , G06F3/06 , G11C11/4093 , G11C11/4076
CPC classification number: G11C29/34 , G06F3/0613 , G06F3/0647 , G06F3/0656 , G06F3/0688 , G06F12/0868 , G06F12/1009 , G06F2212/1016 , G06F2212/1024 , G11C5/04 , G11C7/1045 , G11C7/109 , G11C11/4076 , G11C11/4093 , G11C29/06 , G11C29/26 , G11C2029/0407
Abstract: A method of operating a memory module including a plurality of semiconductor memory devices organized into a multi-rank memory on a DIMM and a memory buffer included on the DIMM, operatively coupled to the multi-rank memory, can be provided by mapping an access to the DIMM from a memory controller to semiconductor memory devices included in more than one rank within the multi-rank memory based on a mode register set signal and selectively linking rank control signals during a parallel bit test operation to the more than one rank within the multi-rank memory plurality of semiconductor memory devices.
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公开(公告)号：US20230389258A1
公开(公告)日：2023-11-30
申请号：US18201465
申请日：2023-05-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eo Jin Lee , Ho Young Tang , Tae-Hyung Kim , Dae Young Moon
IPC: H10B10/00
CPC classification number: H10B10/125
Abstract: An integrated circuit includes a static random access memory (SRAM) device. The SRAM device includes an SRAM unit cell that includes a first output node to which a first pull-up transistor, a first pull-down transistor, and a second pull-down transistor are commonly connected, and a second output node to which a second pull-up transistor, a third pull-down transistor, and a fourth pull-down transistor are commonly connected. The first output node is connected to a first gate electrode, a second gate electrode, a first connection wiring line, a first node formation pattern, and a first active contact, and a layout of the first output node, the first gate electrode, the second gate electrode, the first connection wiring line, the first node formation pattern, and the first active contact forms a first fork shape.
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