公开(公告)号：US20120251738A1

公开(公告)日：2012-10-04

申请号：US13410545

申请日：2012-03-02

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/50 ,  C23C16/45517 ,  C23C16/45544

Abstract: Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced.

Abstract translation: 实施例涉及在注入的极性前体分子的路径上施加磁场以引起前体分子相对于基底表面的螺旋运动。 当极性前体分子到达基底表面时，极性前体分子由于其惯性而在表面上产生横向运动。 极性前体分子的这种侧向运动增加了分子在位置（例如成核位点，断裂键和阶梯表面位置）处发现并沉降或在基底表面上反应的机会。 由于极性前体分子的吸收或反应的机会增加，所以可以减少注射时间或注射次数。

公开(公告)号：US20120213945A1

公开(公告)日：2012-08-23

申请号：US13397590

申请日：2012-02-15

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/42 ,  C23C16/02

CPC classification number: C23C16/45534 ,  B05D1/36 ,  B05D1/38 ,  B05D1/60 ,  B05D1/62 ,  C23C16/345 ,  C23C16/45517 ,  C23C16/45553 ,  C23C16/513

Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.

Abstract translation: 实施例涉及在不同的沉积过程阶段使用自由基。 可以通过在远离衬底的电抗器中的电极上施加电压来产生自由基。 在分子层沉积（MLD），原子层沉积（ALD）和化学气相沉积（CVD）的不同阶段将基团注入到衬底上，以改善沉积层的特性，从而能够沉积不可行的材料和/或 增加沉积速率。 用于产生自由基的气体可包括惰性气体和其它气体。 基团可以分解前体，活化沉积层的表面或引起沉积的分子之间的交联。

公开(公告)号：US20120021252A1

公开(公告)日：2012-01-26

申请号：US13185793

申请日：2011-07-19

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C01F7/02 ,  H05H1/00 ,  B32B9/00 ,  C23C16/50

CPC classification number: C23C16/45534 ,  C23C16/45551 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32752 ,  H01J37/32779 ,  H01J2237/332

Abstract: Depositing one or more layers of material on a substrate using atomic layer deposition (ALD) followed by surface treating the substrate with radicals of inert gas before subjecting the substrate to further deposition of layers. The radicals of the inert gas appear to change the surface state of the deposited layer to a state more amenable to absorb subsequent source precursor molecules. The radicals of the inert gas disconnect bonding of molecules on the surface of the substrate, and render the molecules on the surface to have dangling bonds. The dangling bonds facilitate absorption of subsequently injected source precursor molecules into the surface. Exposure to the radicals of the inert gas thereby increases the deposition rate and improves the properties of the deposited layer.

Abstract translation: 使用原子层沉积（ALD）在衬底上沉积一层或多层材料，然后在使衬底进一步沉积层之前用惰性气体的自由基进行表面处理。 惰性气体的自由基似乎将沉积层的表面状态改变为更适于吸收后续的源前体分子的状态。 惰性气体的自由基分离在基底表面上的分子结合，并使表面上的分子具有悬挂键。 悬挂键有助于随后将注入的源前体分子吸收到表面中。 暴露于惰性气体的自由基因而增加了沉积速率并改善了沉积层的性能。

公开(公告)号：US20100041179A1

公开(公告)日：2010-02-18

申请号：US12539289

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L21/20 ,  H01L21/31 ,  H01L21/3205

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/3141 ,  H01L21/31604

Abstract: A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.

Abstract translation: 通过在具有凹部的基板上形成第一材料层来制造基板结构，使用与第一材料反应的第二材料从基板的除了凹部的部分除去第一材料层，并从 所述第一材料层使用与所述第一材料反应的第三材料。 制造器件的方法可以包括形成衬底结构的方法。

公开(公告)号：US20100006145A1

公开(公告)日：2010-01-14

申请号：US12498298

申请日：2009-07-06

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L31/00 ,  H01L31/18

CPC classification number: H01L31/02168 ,  H01L31/02165 ,  H01L31/022466 ,  Y02E10/50

Abstract: Example embodiments relate to a solar cell and a method for fabricating the same, and more particularly, to a solar cell in which a substrate capable of functioning as electrode is used and a method for fabricating the same. The solar cell may include a substrate and a semiconductor layer laminated on the substrate. The solar cell may include a conductive substrate. The substrate may be a flexible substrate having a coefficient of thermal expansion comparable to that of the semiconductor layer. The semiconductor layer may be formed on the substrate. The solar cell may include a front electrode formed on the semiconductor layer.

Abstract translation: 示例性实施例涉及一种太阳能电池及其制造方法，更具体地说，涉及一种使用能够起电极作用的基板的太阳能电池及其制造方法。 太阳能电池可以包括层叠在基板上的基板和半导体层。 太阳能电池可以包括导电基板。 衬底可以是具有与半导体层的热膨胀系数相当的热膨胀系数的柔性衬底。 半导体层可以形成在基板上。 太阳能电池可以包括形成在半导体层上的前电极。

公开(公告)号：US20120114877A1

公开(公告)日：2012-05-10

申请号：US13285417

申请日：2011-10-31

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/452 ,  H05H1/24

CPC classification number: H01J37/32899 ,  C23C16/45538 ,  C23C16/45551

Abstract: Two or more plasma chambers are provided in a radical reactor to generate radicals of gases under different conditions for use in atomic layer deposition (ALD) process. The radical reactor has a body with multiple channels and corresponding process chambers. Each plasma chamber is surrounded by an outer electrode and has an inner electrode extending through the chamber. When voltage is applied across the outer electrode and the inner electrode with gas present in the plasma chamber, radicals of the gas is generated in the plasma chamber. The radicals generated in the plasma chamber are then injected into a mixing chamber for mixing with radicals of another gas from another plasma chamber, and injected onto the substrate. By providing two or more plasma chambers, different radicals of gases can be generated within the same radical reactor, which obviates the need for separate radical generators.

Abstract translation: 在自由基反应器中提供两个或更多个等离子体室，以在用于原子层沉积（ALD）工艺的不同条件下产生气体自由基。 自由基反应器具有多个通道的主体和相应的处理室。 每个等离子体室被外部电极包围，并且具有延伸穿过该室的内部电极。 当通过存在于等离子体室中的气体在外电极和内电极上施加电压时，在等离子体室中产生气体的自由基。 然后将等离子体室中产生的自由基注入到混合室中，以与来自另一等离子体室的另一种气体的自由基混合，并注入到基板上。 通过提供两个或更多个等离子体室，可以在相同的自由基反应器内产生不同的气体基团，这消除了对单独的自由基发生器的需要。

公开(公告)号：US20110290551A1

公开(公告)日：2011-12-01

申请号：US13107750

申请日：2011-05-13

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H05K5/00 ,  H05H1/24 ,  C23C16/40

CPC classification number: H01L51/5253 ,  H01L51/0096 ,  H01L2251/5338 ,  H01L2251/5369 ,  Y02E10/549

Abstract: A structure for protecting a device includes a first layer, one or more first microstructures on the first layer, and a second layer disposed on the first layer. The second layer is disposed on a surface of the first layer on which one or more microstructures are provided. The microstructure may have a hemispheric shape or other random shapes having a curved surface. Since the area of the interface surface between layers is increased due to the at least one microstructure, the stress per unit area of the interface surface is reduced. Further, the microstructure increases the length of the path that ambient species need to travel in order to reach a device or other active components, thereby reducing the amount of infiltrating ambient species.

Abstract translation: 用于保护装置的结构包括第一层，第一层上的一个或多个第一微结构和设置在第一层上的第二层。 第二层设置在其上设置有一个或多个微结构的第一层的表面上。 微结构可以具有半球形状或具有弯曲表面的其它随机形状。 由于至少一个微结构，由于层间界面的面积增加，因此界面表面的每单位面积的应力减小。 此外，微结构增加环境物质需要行进的路径的长度以便到达装置或其它活性组分，从而减少渗透环境物质的量。

公开(公告)号：US20110076421A1

公开(公告)日：2011-03-31

申请号：US12890504

申请日：2010-09-24

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50 ,  C23C16/458 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC classification number: C23C16/045 ,  C23C16/00 ,  C23C16/40 ,  C23C16/403 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/545

Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes first to third portions arranged along an arc of a circle. The first portion includes at least one first injection portion for injecting a material to a recess in the first portion. The second portion is adjacent to the first portion and has a recess communicatively connected to the recess of the first portion. The third portion is adjacent to the second portion and has a recess communicatively connected to the recess of the second portion and an exhaust portion for discharging the material from the vapor deposition reactor.

Abstract translation: 蒸镀反应器及薄膜形成方法。 气相沉积反应器包括沿圆弧排列的第一至第三部分。 第一部分包括用于将材料注射到第一部分中的凹部中的至少一个第一注射部分。 第二部分与第一部分相邻，并具有与第一部分的凹部通信连接的凹部。 第三部分与第二部分相邻并且具有与第二部分的凹部连通的凹部和用于从气相沉积反应器排出材料的排气部分。

公开(公告)号：US20100068413A1

公开(公告)日：2010-03-18

申请号：US12560690

申请日：2009-09-16

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: B01J19/08 ,  C23C16/54

CPC classification number: C23C16/50 ,  C23C16/45514 ,  C23C16/45595 ,  C23C16/54

Abstract: A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.

Abstract translation: 气相沉积反应器可以包括包括第一通道的第一电极和连接到第一通道的至少一个第一注入孔。 与第一电极电分离的第二电极和用于在第一电极和第二电极之间施加电力以从第一电极和第二电极之间的反应气体产生等离子体的电源。 还提供了使用蒸镀反应器形成薄膜的方法。

公开(公告)号：US20100041213A1

公开(公告)日：2010-02-18

申请号：US12539477

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: H01L21/20 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/02521 ,  C23C16/45551 ,  H01L21/4814

Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

Abstract translation: 气相沉积反应器包括填充有第一材料的腔室和腔室中的至少一个反应模块。 反应模块可以被配置为使得基板通过反应模块通过基板和反应模块之间的相对运动。 反应模块可以包括用于将第二材料注入基底的注射单元。 一种用于形成薄膜的方法包括将基板定位在室中，填充室中的第一材料，相对于室中的反应模块移动基板，以及在基板通过反应模块时将第二材料注入到基板。