公开(公告)号：US5397400A

公开(公告)日：1995-03-14

申请号：US94304

申请日：1993-07-21

申请人： Yoshinori Matsuno ,  Hideo Naomoto ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Hajime Sasaki

发明人： Yoshinori Matsuno ,  Hideo Naomoto ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Hajime Sasaki

IPC分类号： H01L31/04 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18 ,  H01L33/00 ,  H01L31/06

CPC分类号： H01L31/022433 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  H01L33/0079 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： A thin-film solar cell includes a thin active layer of high purity material having opposed front and rear surfaces for light-to-electricity conversion, a structure for supporting the thin active layer, and a rear electrode in contact with the rear surface of the active layer. The supporting structure includes a supporting substrate of a low purity material having opposed front and rear surfaces, on the front surface of which the rear surface of the active layer is disposed, and an insulating barrier layer interposed between the front surface of the supporting substrate and the rear surface of the active layer. The barrier layer prevents impurities in the supporting substrate from diffusing into the active layer. Since the supporting substrate comprises a low purity material, the quantity of the expensive high purity material can be reduced by reducing the thickness of the active layer, resulting in low production costs. Since the supporting substrate is present on the rear surface of the active layer, a surface electrode disposed on the front surface of the active layer is exposed. Therefore, when a solar cell module is fabricated using a plurality of the solar cells, a wire bonding process for connecting adjacent solar cells is easily carried out.

摘要翻译： 薄膜太阳能电池包括具有相对的用于光电转换的相对的前表面和后表面的高纯度材料的薄活性层，用于支撑薄活性层的结构和与所述薄电极的背面接触的后电极 活动层 支撑结构包括具有相对的前表面和后表面的低纯度材料的支撑衬底，其前表面上设置有源层的后表面，以及绝缘阻挡层，介于支撑衬底的前表面和 活性层的后表面。 阻挡层防止支撑衬底中的杂质扩散到有源层中。 由于支撑基板包括低纯度材料，所以通过减小活性层的厚度可以降低昂贵的高纯度材料的量，导致生产成本低。 由于支撑衬底存在于有源层的后表面上，所以露出有源层前表面上的表面电极。 因此，当使用多个太阳能电池制造太阳能电池模块时，容易进行用于连接相邻太阳能电池的引线接合工艺。

公开(公告)号：US5357124A

公开(公告)日：1994-10-18

申请号：US84952

申请日：1993-07-02

申请人： Kenichi Kajiwara ,  Satoshi Arimoto ,  Etsuji Omura

发明人： Kenichi Kajiwara ,  Satoshi Arimoto ,  Etsuji Omura

IPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/0045 ,  H01L33/0062

摘要： A superluminescent diode (SLD) includes a substrate, a double heterojunction structure including a first conductivity type first cladding layer, an undoped active layer, and a second conductivity type second cladding layer. A second conductivity type first diffused region having a stripe shape and a length extends from a front facet halfway to the rear facet through which current is injected into the active layer and a second conductivity type second diffused region spaced from the first diffused region extends through the second cladding layer and the active layer and into the first cladding layer between the first diffused region and the rear facet of the device. Even when operating at high light output power, light reflections are reduced so that the SLD operates with hardly any laser oscillation.

摘要翻译： 超发光二极管（SLD）包括基板，包括第一导电型第一包覆层，未掺杂有源层和第二导电型第二包覆层的双异质结结构。 具有条形形状和长度的第二导电类型的第一扩散区域从中间到后面的一个小面延伸，电流注入到有源层中，并且与第一扩散区域间隔开的第二导电类型的第二扩散区域延伸穿过 第二包覆层和有源层，并且进入第一扩散区域和器件的后面之间的第一包层。 即使在高光输出功率下工作时，也会减少光反射，使得SLD几乎不会发生激光振荡。

公开(公告)号：US5759292A

公开(公告)日：1998-06-02

申请号：US689002

申请日：1996-07-30

申请人： Satoshi Arimoto ,  Hiroaki Morikawa ,  Yoichiro Nishimoto

发明人： Satoshi Arimoto ,  Hiroaki Morikawa ,  Yoichiro Nishimoto

IPC分类号： H01L31/04 ,  H01L21/318 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0248

CPC分类号： H01L31/02168 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell has a high ability to prevent recombination of electrons near the cell surface, wherein a surface of a p-type substrate at a surface is provided with an n-type region subjected to a treatment with a phosphorus containing acid and a silicon nitride layer is then directly formed on the n-type region. The solar cell can be prepared at a low temperature by a method comprising 1) a step of subjecting the n-type region to a phosphorus containing acid treatment at a low temperature and 2) a step of forming a silicon nitride by a vacuum and thermal CVD method.

摘要翻译： 太阳能电池具有防止细胞表面附近的电子复合的高能力，其中表面上的p型基板的表面设置有经受含磷酸和氮化硅处理的n型区域 然后在n型区域上直接形成层。 太阳能电池可以通过以下方法在低温下制备：1）在低温下对n型区域进行含磷酸处理的步骤，以及2）通过真空和热处理形成氮化硅的步骤 CVD法。

公开(公告)号：US5467731A

公开(公告)日：1995-11-21

申请号：US322375

申请日：1994-10-13

申请人： Satoshi Arimoto ,  Norio Hayafuji ,  Mikio Deguchi ,  Satoshi Hamamoto

发明人： Satoshi Arimoto ,  Norio Hayafuji ,  Mikio Deguchi ,  Satoshi Hamamoto

IPC分类号： H01L21/208 ,  H01L21/20 ,  C30B13/20

CPC分类号： H01L21/2022

摘要： A method for producing a semiconductor structure including a semiconductor film formed on a semiconductor substrate body via an insulating film includes: laminating a first insulating film, a first semiconductor film, and a second insulating film on the semiconductor substrate successively; forming stripe-shaped second semiconductor films of predetermined width on the second insulating film arranged periodically at a predetermined interval and covering these second semiconductor films with a third insulating film; performing zone melting recrystallization of the first semiconductor film from one end of the substrate to the opposite end along the stripe direction of the stripe-shaped second semiconductor film; etching the third insulating film and portions of the second insulating film not sandwiched by the first and second semiconductor films; oxidizing portions of the second semiconductor film and the first semiconductor film exposed in the etching step and etching and removing the second insulating film remaining after the previous etching. Thus, a semiconductor substrate including a recrystallized semiconductor film having removed sub-grain-boundaries generated during the zone melting recrystallization, is obtained by fewer process steps than in the prior art.

摘要翻译： 一种用于制造半导体结构的方法，该半导体结构包括通过绝缘膜形成在半导体衬底本体上的半导体膜，包括：依次在半导体衬底上层叠第一绝缘膜，第一半导体膜和第二绝缘膜; 在预定间隔周期性地布置的第二绝缘膜上形成预定宽度的条状第二半导体膜，并用第三绝缘膜覆盖这些第二半导体膜; 从所述基板的一端到所述条状的第二半导体膜的条带方向的相反端进行区域熔融再结晶的第一半导体膜; 蚀刻第三绝缘膜和未被第一和第二半导体膜夹持的第二绝缘膜的部分; 在蚀刻步骤中暴露的第二半导体膜和第一半导体膜的氧化部分，并蚀刻除去在先前蚀刻之后残留的第二绝缘膜。 因此，通过比现有技术更少的工艺步骤获得包括在区域熔融再结晶期间产生的去除亚晶界的再结晶半导体膜的半导体衬底。

公开(公告)号：US5210767A

公开(公告)日：1993-05-11

申请号：US757808

申请日：1991-09-11

申请人： Satoshi Arimoto ,  Naohito Yoshida

发明人： Satoshi Arimoto ,  Naohito Yoshida

IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S5/223

CPC分类号： H01L33/0062 ,  H01S5/2231 ,  H01S5/209

摘要： A semiconductor laser includes a first conductivity type semiconductor substrate; a first conductivity type semiconductor first cladding layer disposed on the substrate; a semiconductor active layer disposed on the first cladding layer; a second conductivity type semiconductor second cladding layer disposed on the active layer; a current concentration and collection structure for confining current flow to part of the active layer including a second conductivity type ridge structure disposed on the second cladding layer, a first conductivity type semiconductor current blocking layer disposed directly on the second cladding layer and adjacent to and contacting the ridge structure, the ridge structure including a semiconductor etch stopping layer different in composition from and disposed on the second cladding layer and a second conductivity type semiconductor third cladding layer disposed on and different in composition from the etch stopping layer, and a second conductivity type semiconductor transition layer; a second conductivity type semiconductor contacting layer contacting the current concentration and collection structure; and first and second electrodes respectively disposed on the substrate and the contacting layer.

公开(公告)号：US5182229A

公开(公告)日：1993-01-26

申请号：US798740

申请日：1991-11-27

申请人： Satoshi Arimoto

发明人： Satoshi Arimoto

IPC分类号： C30B31/02 ,  H01L21/18 ,  H01L21/225

CPC分类号： H01L21/2258 ,  H01L21/182 ,  Y10S148/16

摘要： A method for diffusing n type impurities from a solid phase source into a III-V compound semiconductor includes depositing an amorphous or polycrystalline selenium or sulfur film on the III-V compound semiconductor and diffusing selenium or sulfur from the film into the compound semiconductor by annealing. Highly controllable diffusion of n type impurities in a high concentration is achieved.

摘要翻译： 将n型杂质从固相源扩散到III-V化合物半导体中的方法包括在III-V化合物半导体上沉积非晶或多晶硒或硫膜，并通过退火将膜从硒扩散到化合物半导体中的硒或硫 。 实现了高浓度的n型杂质的高度可控的扩散。

公开(公告)号：US5082798A

公开(公告)日：1992-01-21

申请号：US588808

申请日：1990-09-27

申请人： Satoshi Arimoto

发明人： Satoshi Arimoto

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/205

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  Y10S438/925

摘要： A crystal growth method using an atomic layer epitaxial growth method for growing a III-V compound semiconductor by metal organic chemical deposition in which group III and group V elements are supplied independently including doping with a group IV element as an amphoteric impurity by alternatingly epitaxially growing one atomic layer including the group IV element and one of the group III and group V elements and epitaxially growing one atomic layer of the other of the group III and V elements.

摘要翻译： 一种使用原子层外延生长方法的晶体生长方法，用于通过金属有机化学沉积生长III-V族化合物半导体，其中独立地提供III族和V族元素，包括用IV族元素掺杂作为两性杂质，通过交替外延生长 一个原子层，包括IV族元素和III族和V族元素中的一种，并且外延生长III族和V族元素中另一种的一个原子层。

公开(公告)号：US08603322B2

公开(公告)日：2013-12-10

申请号：US13599424

申请日：2012-08-30

申请人： Satoshi Arimoto

发明人： Satoshi Arimoto

IPC分类号： G01N27/403

CPC分类号： G01N27/3277 ,  G01N27/42

摘要： The purpose of the invention is to provide a method for accurately quantifying a chemical substance by a substitutional stripping voltammetry technique. A method is provided for quantifying a chemical substance contained in a sample solution, and the method comprises preparing a measurement system. The measurement system comprises a pair of working electrodes (a first and a second electrodes), a counter electrode, and a gel-coated electrode. This gel-coated electrode comprises an electrode surface, a stripping gel, and a protection gel, and the protection gel covers the stripping gel.

摘要翻译： 本发明的目的是提供一种通过取代溶出伏安法精确定量化学物质的方法。 提供了用于量化样品溶液中所含的化学物质的方法，该方法包括制备测量系统。 测量系统包括一对工作电极（第一和第二电极），对电极和凝胶涂覆电极。 该凝胶涂覆的电极包括电极表面，剥离凝胶和保护凝胶，并且保护凝胶覆盖剥离凝胶。

公开(公告)号：US08329023B2

公开(公告)日：2012-12-11

申请号：US13307612

申请日：2011-11-30

申请人： Satoshi Arimoto

发明人： Satoshi Arimoto

IPC分类号： G01N27/403

CPC分类号： G01N27/42

摘要： The purpose of the invention is to provide a method for quantifying a chemical substance with high accuracy using substitutional stripping voltammetry and a sensor chip used therefor.A sensor chip comprising a stripping electrode which is covered with stripping gel and a method utilizing the sensor chip. A reaction represented by the following formula (III) occurs at the stripping electrode. [Chem. 3] Ag+X⊖→AgX↓+e⊖  (III)

摘要翻译： 本发明的目的是提供一种使用替代溶出伏安法以高精度量化化学物质的方法和用于其的传感器芯片。 传感器芯片，其包括用剥离凝胶覆盖的剥离电极和利用传感器芯片的方法。 由剥离电极发生由下式（III）表示的反应。 [Chem。 3] Ag +X⊖→AgX↓+e⊖（III）

公开(公告)号：US06391145B1

公开(公告)日：2002-05-21

申请号：US09285264

申请日：1999-04-02

申请人： Yoichiro Nishimoto ,  Satoshi Arimoto ,  Keisuke Namba

发明人： Yoichiro Nishimoto ,  Satoshi Arimoto ,  Keisuke Namba

IPC分类号： H01L2100

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

摘要： In preparing a solar cell, minute projections and recesses are uniformly formed in a surface of a single crystal silicon substrate or a polycrystal silicon substrate by dipping in an etching liquid composed of a mixed acid which is composed mainly of a hydrofluoride acid, a nitric acid and a phosphoric acid in addition to a surface active agent. A solar cell having a substrate in which spherical projections and recesses are formed in a surface of it to which light is incident; an apparatus for producing efficiently a solar cell by realizing the above-mentioned process, and a wet etching apparatus to effect stably the above-mentioned process to thereby maintaining a concentration of a nitric acid to be constant, are provided.

摘要翻译： 在制备太阳能电池时，通过浸渍在由主要由氢氟酸，硝酸组成的混合酸组成的蚀刻液中，在单晶硅衬底或多晶硅衬底的表面中均匀地形成微小的突起和凹陷 以及除了表面活性剂之外的磷酸。 一种具有基板的太阳能电池，其中在其入射的光的表面上形成有球形的凸起和凹陷; 提供了通过实现上述工艺来有效地生产太阳能电池的装置，以及稳定地实现上述处理从而将硝酸浓度保持恒定的湿式蚀刻装置。