公开(公告)号：US5963790A

公开(公告)日：1999-10-05

申请号：US879367

申请日：1997-06-20

申请人： Yoshinori Matsuno ,  Hideo Naomoto ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Hajime Sasaki

发明人： Yoshinori Matsuno ,  Hideo Naomoto ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Hajime Sasaki

IPC分类号： H01L31/04 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18 ,  H01L33/00

CPC分类号： H01L31/022433 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  H01L33/0079 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： A method for producing a thin film solar cell includes preparing a substrate of a low purity material and having opposed front and rear surfaces; forming an insulating film on the front surface of the substrate; forming a second conductivity type active layer of a high purity material on the insulating film with a front surface exposed; forming a second conductivity type semiconductor region within the active layer, reaching the front surface, to produce a p-n junction for light-to-electricity conversion; forming an anti-reflection film on the front surface of the active layer, the anti-reflection film reducing reflection of incident light; forming a surface electrode in contact with the front surface of the active layer; adhering the front surface side of the active layer to a supporting plate and selectively etching the low purity substrate from the rear surface to form a supporting substrate supporting the active layer; and forming a rear electrode on the rear surface of the supporting substrate contacting the active layer.

摘要翻译： 一种制造薄膜太阳能电池的方法包括制备低纯度材料的基片并具有相对的前表面和后表面; 在所述基板的前表面上形成绝缘膜; 在绝缘膜上形成具有暴露的前表面的高纯度材料的第二导电型有源层; 在有源层内形成第二导电类型的半导体区域，到达前表面，以产生用于光电转换的p-n结; 在有源层的正面上形成防反射膜，防反射膜减少入射光的反射; 形成与所述有源层的前表面接触的表面电极; 将有源层的前表面侧粘附到支撑板上，并从后表面选择性地蚀刻低纯度基板以形成支撑有源层的支撑基板; 以及在与有源层接触的支撑基板的后表面上形成后电极。

公开(公告)号：US5472885A

公开(公告)日：1995-12-05

申请号：US344600

申请日：1994-11-18

申请人： Yoshinori Matsuno ,  Hideo Naomoto ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Hajime Sasaki

发明人： Yoshinori Matsuno ,  Hideo Naomoto ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Hajime Sasaki

IPC分类号： H01L31/04 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18 ,  H01L33/00

CPC分类号： H01L31/022433 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  H01L33/0079 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： A method for producing a thin-film solar cell includes successively depositing a lower anti-reflection film having a relatively large etching rate in a prescribed etchant and an upper anti-reflection film having a relatively small etching rate in the prescribed etchant on a photosensitive surface of a semiconductor substrate; patterning the upper anti-reflection film to form an aperture; and etching the lower anti-reflection film using the patterned upper anti-reflection film as a mask.

摘要翻译： 一种制造薄膜太阳能电池的方法包括在规定的蚀刻剂中依次沉积具有相对较大蚀刻速率的下部抗反射膜和在规定的蚀刻剂上具有相对较小的蚀刻速率的上部抗反射膜在感光表面上 的半导体衬底; 图案化上部抗反射膜以形成孔; 并使用图案化的上部抗反射膜作为掩模蚀刻下部抗反射膜。

公开(公告)号：US5397400A

公开(公告)日：1995-03-14

申请号：US94304

申请日：1993-07-21

申请人： Yoshinori Matsuno ,  Hideo Naomoto ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Hajime Sasaki

发明人： Yoshinori Matsuno ,  Hideo Naomoto ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Hajime Sasaki

IPC分类号： H01L31/04 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18 ,  H01L33/00 ,  H01L31/06

CPC分类号： H01L31/022433 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  H01L33/0079 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： A thin-film solar cell includes a thin active layer of high purity material having opposed front and rear surfaces for light-to-electricity conversion, a structure for supporting the thin active layer, and a rear electrode in contact with the rear surface of the active layer. The supporting structure includes a supporting substrate of a low purity material having opposed front and rear surfaces, on the front surface of which the rear surface of the active layer is disposed, and an insulating barrier layer interposed between the front surface of the supporting substrate and the rear surface of the active layer. The barrier layer prevents impurities in the supporting substrate from diffusing into the active layer. Since the supporting substrate comprises a low purity material, the quantity of the expensive high purity material can be reduced by reducing the thickness of the active layer, resulting in low production costs. Since the supporting substrate is present on the rear surface of the active layer, a surface electrode disposed on the front surface of the active layer is exposed. Therefore, when a solar cell module is fabricated using a plurality of the solar cells, a wire bonding process for connecting adjacent solar cells is easily carried out.

摘要翻译： 薄膜太阳能电池包括具有相对的用于光电转换的相对的前表面和后表面的高纯度材料的薄活性层，用于支撑薄活性层的结构和与所述薄电极的背面接触的后电极 活动层 支撑结构包括具有相对的前表面和后表面的低纯度材料的支撑衬底，其前表面上设置有源层的后表面，以及绝缘阻挡层，介于支撑衬底的前表面和 活性层的后表面。 阻挡层防止支撑衬底中的杂质扩散到有源层中。 由于支撑基板包括低纯度材料，所以通过减小活性层的厚度可以降低昂贵的高纯度材料的量，导致生产成本低。 由于支撑衬底存在于有源层的后表面上，所以露出有源层前表面上的表面电极。 因此，当使用多个太阳能电池制造太阳能电池模块时，容易进行用于连接相邻太阳能电池的引线接合工艺。

公开(公告)号：US5725006A

公开(公告)日：1998-03-10

申请号：US563420

申请日：1995-11-28

申请人： Yoshitatsu Kawama ,  Takashi Ishihara ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Akihiro Takami ,  Yoshinori Matsuno ,  Hideo Naomoto ,  Yoichiro Nishimoto

发明人： Yoshitatsu Kawama ,  Takashi Ishihara ,  Satoshi Arimoto ,  Hiroaki Morikawa ,  Akihiro Takami ,  Yoshinori Matsuno ,  Hideo Naomoto ,  Yoichiro Nishimoto

IPC分类号： E04D13/18 ,  G09F7/00 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/04 ,  H01L31/042 ,  H01L31/048 ,  H01L31/052

CPC分类号： H01L31/03529 ,  H01L31/0236 ,  H01L31/048 ,  Y02E10/50

摘要： A solar battery cell, solar battery module, and solar battery module group achieving high product value by enabling the display of surface patterns without reducing the power generating efficiency of the solar battery cells are provided. The direction and/or reflectance of reflected light incident to the surface of the solar battery cell are varied by controlling the distribution of the rough surface structure imparted to the solar battery cell surface. The direction or reflectance of reflected light incident to the surface of the solar battery cell is changed in part depending upon the part of the semiconductor solar battery cell surface to which the light is incident. Semiconductor solar battery cells with high product value can therefore be achieved because patterns with strong visual impact can be displayed and easily recognized without reducing the power generation efficiency of the solar battery cell.

摘要翻译： 提供了一种能够在不降低太阳能电池单元的发电效率的情况下实现表面图案的显示而实现高产品价值的太阳能电池单元，太阳能电池模块和太阳能电池模块组。 通过控制赋予太阳能电池单元表面的粗糙表面结构的分布来改变入射到太阳能电池单元的表面的反射光的方向和/或反射率。 入射到太阳能电池单元的表面的反射光的方向或反射率部分地取决于光入射的半导体太阳能电池单元表面的部分。 因此，可以在不降低太阳能电池单元的发电效率的情况下显示并容易地识别具有强烈的视觉冲击的图案，从而实现具有高产品值的半导体太阳能电池单元。

公开(公告)号：US06096569A

公开(公告)日：2000-08-01

申请号：US201660

申请日：1998-12-01

申请人： Yoshinori Matsuno ,  Yoshitatsu Kawama ,  Hiroaki Morikawa ,  Satoshi Arimoto ,  Hisao Kumabe ,  Toshio Murotani

发明人： Yoshinori Matsuno ,  Yoshitatsu Kawama ,  Hiroaki Morikawa ,  Satoshi Arimoto ,  Hisao Kumabe ,  Toshio Murotani

IPC分类号： H01L31/04 ,  H01L31/042 ,  H01L31/18

CPC分类号： H01L31/0504 ,  H01L31/022441 ,  H01L31/048 ,  H01L31/0516 ,  H01L31/1892 ,  Y02E10/50

摘要： A process of forming electrodes is simplified during modularizing of a solar battery. According to the manufacturing method and the manufacturing apparatus, a thin solar battery is manufactured at a reduced cost and with a better yield. Using a robot which includes a suction chip which can handle a semiconductor film 2 without any damage which is separated from a particular substrate 1, the semiconductor films 2 are each accurately placed through a transparent resin 3 onto a glass substrate 7 which serves as a window of a solar battery, and p-type and n-type electrodes are printed at a time on the semiconductor films 2 which are arranged. Further, since a monolithic tab electrode is soldered to connect the electrodes, the manufacturing processes of the solar battery are simplified.

摘要翻译： 在太阳能电池的模块化期间简化了形成电极的工艺。 根据制造方法和制造装置，以更低的成本和更好的产量制造薄的太阳能电池。 使用包括能够处理半导体膜2而不会从特定基板1分离的任何损伤的吸引芯片的机器人，将半导体膜2分别通过透明树脂3准确地放置在作为窗口的玻璃基板7上 的太阳能电池，并且在配置的半导体膜2上一次印刷p型和n型电极。 此外，由于整体式接片电极被焊接以连接电极，所以太阳能电池的制造工艺被简化。

公开(公告)号：US06261969B1

公开(公告)日：2001-07-17

申请号：US08777380

申请日：1996-12-27

申请人： Yoshinori Matsuno ,  Hiroaki Morikawa

发明人： Yoshinori Matsuno ,  Hiroaki Morikawa

IPC分类号： H01L21302

CPC分类号： H01L21/31111 ,  H01L21/78

摘要： The method of manufacturing a semiconductor apparatus can solve problems in that a semiconductor film is not separated completely from a substrate and a great quantity of etchant is required. Ammonium fluoride is added to a hydrofluoric acid solution, so as to improve the etching rate and promote separation of the semiconductor film from the substrate. A manufacturing apparatus according to the present invention is provided with a re-liquefying function capable of again liquefying vapor of hydrofluoric acid solution so as to use liquefied vapor as the etchant so that the etchant is saved.

摘要翻译： 制造半导体装置的方法可以解决半导体膜不完全从基板分离并且需要大量蚀刻剂的问题。 将氟化铵加入到氢氟酸溶液中，以提高蚀刻速率并促进半导体膜与基板的分离。 根据本发明的制造装置具有能够再次液化氢氟酸溶液的蒸气的再液化功能，以便使用液化蒸气作为蚀刻剂，从而节省蚀刻剂。

公开(公告)号：US08569123B2

公开(公告)日：2013-10-29

申请号：US13258941

申请日：2009-09-01

申请人： Yoshinori Matsuno ,  Kenichi Ohtsuka ,  Naoki Yutani ,  Kenichi Kuroda ,  Hiroshi Watanabe ,  Shozo Shikama

发明人： Yoshinori Matsuno ,  Kenichi Ohtsuka ,  Naoki Yutani ,  Kenichi Kuroda ,  Hiroshi Watanabe ,  Shozo Shikama

IPC分类号： H01L21/338

CPC分类号： H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/872

摘要： An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device includes: (a) performing ion implantation to a silicon carbide layer; (b) performing activation annealing to the ion-implanted silicon carbide layer 2; (c) removing a surface layer of the silicon carbide layer 2, to which the activation annealing has been performed, by dry etching; (d) forming a sacrificial oxide film on a surface layer of the silicon carbide layer, to which the dry etching has been performed, by performing sacrificial oxidation thereto; and (e) removing the sacrificial oxide film by wet etching.

摘要翻译： 本发明的目的是提供一种用于制造碳化硅半导体器件的方法，其中可以缩短去除牺牲氧化膜所需的时间，并且可以降低对碳化硅层的表面的损坏。 制造碳化硅半导体器件的方法包括：（a）对碳化硅层进行离子注入; （b）对离子注入碳化硅层2进行激活退火; （c）通过干蚀刻去除已经进行了活化退火的碳化硅层2的表面层; （d）通过对其进行牺牲氧化，在已经进行了干蚀刻的碳化硅层的表面层上形成牺牲氧化膜; 和（e）通过湿蚀刻去除牺牲氧化膜。

公开(公告)号：US20120028453A1

公开(公告)日：2012-02-02

申请号：US13258941

申请日：2009-09-01

申请人： Yoshinori Matsuno ,  Kenichi Ohtsuka ,  Naoki Yutani ,  Kenichi Kuroda ,  Hiroshi Watanabe ,  Shozo Shikama

发明人： Yoshinori Matsuno ,  Kenichi Ohtsuka ,  Naoki Yutani ,  Kenichi Kuroda ,  Hiroshi Watanabe ,  Shozo Shikama

IPC分类号： H01L21/265

CPC分类号： H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/872

摘要： An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device includes: (a) performing ion implantation to a silicon carbide layer; (b) performing activation annealing to the ion-implanted silicon carbide layer 2; (c) removing a surface layer of the silicon carbide layer 2, to which the activation annealing has been performed, by dry etching; (d) forming a sacrificial oxide film on a surface layer of the silicon carbide layer, to which the dry etching has been performed, by performing sacrificial oxidation thereto; and (e) removing the sacrificial oxide film by wet etching.

摘要翻译： 本发明的目的是提供一种用于制造碳化硅半导体器件的方法，其中可以缩短去除牺牲氧化膜所需的时间，并且可以降低对碳化硅层的表面的损坏。 制造碳化硅半导体器件的方法包括：（a）对碳化硅层进行离子注入; （b）对离子注入碳化硅层2进行激活退火; （c）通过干蚀刻去除已经进行了活化退火的碳化硅层2的表面层; （d）通过对其进行牺牲氧化，在已经进行了干蚀刻的碳化硅层的表面层上形成牺牲氧化膜; 和（e）通过湿蚀刻去除牺牲氧化膜。

公开(公告)号：US07847296B2

公开(公告)日：2010-12-07

申请号：US12066366

申请日：2006-04-24

申请人： Hiroshi Sugimoto ,  Yoshinori Matsuno ,  Kenichi Ohtsuka ,  Noboru Mikami ,  Kenichi Kuroda

发明人： Hiroshi Sugimoto ,  Yoshinori Matsuno ,  Kenichi Ohtsuka ,  Noboru Mikami ,  Kenichi Kuroda

IPC分类号： H01L29/15

CPC分类号： H01L29/8611 ,  H01L21/0445 ,  H01L29/045 ,  H01L29/0684 ,  H01L29/1608 ,  H01L29/6606

摘要： On a major surface of an n-type silicon carbide inclined substrate (2) is formed an n-type voltage-blocking layer (3) made of silicon carbide by means of epitaxial growth. On the n-type voltage-blocking layer (3) is formed a p-type silicon carbide region (4) rectangular when viewed from above. On the surface of the p-type silicon carbide region (4) is formed a p-type contact electrode (5). In the p-type silicon carbide region (4), the periphery of the p-type silicon carbide region (4) that is parallel with a (11-20) plane (14a) of the silicon carbide crystal, which is liable to cause avalanche breakdown, is located on the short side. In this manner, the dielectric strength of a silicon carbide semiconductor device can be improved.

摘要翻译： 在n型碳化硅倾斜衬底（2）的主表面上通过外延生长形成由碳化硅制成的n型压阻层（3）。 在从上方观察时，在n型电压阻挡层（3）上形成矩形的p型碳化硅区域（4）。 在p型碳化硅区域（4）的表面上形成p型接触电极（5）。 在p型碳化硅区域（4）中，与碳化硅晶体的（11-20）面（14a）平行的p型碳化硅区域（4）的周边易于引起 雪崩破裂，位于短边。 以这种方式，可以提高碳化硅半导体器件的介电强度。

公开(公告)号：US20060118812A1

公开(公告)日：2006-06-08

申请号：US11142322

申请日：2005-06-02

申请人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yoshinori Matsuno ,  Kenichi Kuroda ,  Hiroshi Sugimoto

发明人： Kenichi Ohtsuka ,  Yoichiro Tarui ,  Yoshinori Matsuno ,  Kenichi Kuroda ,  Hiroshi Sugimoto

IPC分类号： H01L29/74

CPC分类号： H01L29/0619 ,  H01L29/1608 ,  H01L29/872 ,  Y10S388/917

摘要： A semiconductor device includes an anode electrode in Schottky contact with an n-type drift layer formed in an SiC substrate and a JTE region formed outside the anode electrode. The JTE region is made up of a first p-type zone formed in an upper portion of the drift layer under an edge of the anode electrode and a second p-type zone formed outside the first p-type zone having a lower surface impurity concentration than the first p-type zone. The second p-type zone is provided 15 μm or more outwardly away from the edge of the anode electrode. The surface impurity concentration of the first p-type zone ranges from 1.8×1013 to 4×1013 cm−2, and that of the second p-type zone ranges from 1×1013 to 2.5×1013 cm−2.

摘要翻译： 半导体器件包括与形成在SiC衬底中的n型漂移层肖特基接触的阳极电极和形成在阳极电极外部的JTE区域。 JTE区域由在阳极电极的边缘的漂移层的上部形成的第一p型区域和形成在具有较低表面杂质浓度的第一p型区域外的第二p型区域构成 比第一个p型区域。 第二个p型区域距离阳极电极的边缘向外提供15个或更多个外部。 第一p型区域的表面杂质浓度范围为1.8×10 13〜4×10 -3 cm -2，而第二p型区域的表面杂质浓度为 型区域范围为1×10 13至2.5×10 13 cm -2。