Method of selecting live sugar beet seeds from a mixture of live and
dead seeds
    11.
    发明授权
    Method of selecting live sugar beet seeds from a mixture of live and dead seeds 失效
    从活的和死亡的种子的混合物中选择活的甜菜种子的方法

    公开(公告)号:US4837970A

    公开(公告)日:1989-06-13

    申请号:US37228

    申请日:1987-04-10

    申请人: Yukio Sasaki

    发明人: Yukio Sasaki

    IPC分类号: A01C1/00 A01C1/02 A01C1/06

    CPC分类号: A01C1/025 Y10S47/09

    摘要: A method for selecting live seeds of sugar beet (those which are able to germinate) from dead seeds (those which are unable to germinate) based on the case of seed-cap releasing. When immersed in water, live seeds absorb much water and expand appreciably, while dead seeds expand only slightly because less water is absorbed. This expansion of live seeds upon absorption of water makes the seed caps, closely fitted onto the outer shells of fruit, ready to be released. When mechanical vibrations are given to a mixture of water-soaked fruit, only the seed caps of expanded fruit are easily released. Thus live seeds of sugar beet can be effectively obtained by selecting out the fruit from which seed caps have been released.

    摘要翻译: 基于种子帽释放的情况,从死亡种子(那些不能发芽的)中选择甜菜(能够发芽的种子)的活种子的方法。 当浸入水中时,活的种子会吸收大量的水分,而且明显膨胀,而死亡的种子只有稍微扩张才会吸收较少的水分。 活的种子在吸收水后的膨胀使得紧密配合到水果外壳上的种子盖准备被释放。 当机械振动给水浸水果的混合物时,只有膨胀果实的种子盖容易释放。 因此,通过选择释放种子盖的果实,可以有效地获得甜菜的活种子。

    Light-emitting diode array
    12.
    发明授权
    Light-emitting diode array 有权
    发光二极管阵列

    公开(公告)号:US07112824B2

    公开(公告)日:2006-09-26

    申请号:US11002065

    申请日:2004-12-03

    IPC分类号: H01L33/00 B41J2/45

    CPC分类号: B41J2/45 H01L27/153

    摘要: A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, first electrodes each formed on at least part of an upper surface of each light-emitting portion, one second electrode formed directly on the conductive layer in each block, common switching wirings separately connected to the first electrodes, first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, n light-emitting portions (n is an even number) being arranged transversely in each block, and second grooves being formed in the conductive layer between adjacent light-emitting portions such that the second grooves are arranged short and long alternately, with the nearest one to the first groove being short.

    摘要翻译: 一种发光二极管阵列,其包括形成在基板上的导电层,形成在所述导电层上的多个分立的发光部,形成在所述导电层中的将所述发光部分分割成块的第一沟槽,每个形成的第一电极 在每个发光部分的上表面的至少一部分上,直接形成在每个块中的导电层上的一个第二电极,与第一电极分开连接的公共开关布线,分别连接到每个公共布线的第一接合焊盘,第一接合 每个连接到每个公共布线的焊盘和每个连接到每个第二电极的第二焊盘,在每个块中横向布置n个发光部分(n是偶数),并且在相邻光之间的导电层中形成第二凹槽 以使第二槽交替地布置成短而长,最靠近第一槽的一个是短的。

    Light emitting diode and light emitting diode array
    13.
    发明申请
    Light emitting diode and light emitting diode array 审中-公开
    发光二极管和发光二极管阵列

    公开(公告)号:US20060208265A1

    公开(公告)日:2006-09-21

    申请号:US11272761

    申请日:2005-11-15

    IPC分类号: H01L33/00

    摘要: A light emitting diode array comprises compound semiconductor layers epitaxially grown on a p-type GaAs conductive layer 11 formed on a semi-insulating GaAs substrate 30. The epitaxial layer is isolated and divided into a plurality of light emitting parts 1 which function as a light emitting diode. A Si-doped n-type GaAs buffer layer 31 is interposed between the semi-insulating GaAs substrate 30 and the p-type GaAs conductive layer 11. In the light emitting diode array comprising this epitaxial configuration, it is possible to prevent the short-circuit defect due to diffusion of p-type dopant from the p-type GaAs conductive layer into the semi-insulating GaAs substrate made by the LEC method.

    摘要翻译: 发光二极管阵列包括在形成在半绝缘GaAs衬底30上的p型GaAs导电层11上外延生长的化合物半导体层。外延层被隔离并分成多个用作光的发光部分1 发光二极管。 在半绝缘GaAs衬底30和p型GaAs导电层11之间插入Si掺杂的n型GaAs缓冲层31.在包括该外延结构的发光二极管阵列中,可以防止短路, 由p型掺杂剂从p型GaAs导电层扩散到由LEC法制成的半绝缘GaAs衬底中的电路缺陷。

    Light-emitting diode array
    14.
    发明申请
    Light-emitting diode array 有权
    发光二极管阵列

    公开(公告)号:US20050269579A1

    公开(公告)日:2005-12-08

    申请号:US11002065

    申请日:2004-12-03

    CPC分类号: B41J2/45 H01L27/153

    摘要: A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, first electrodes each formed on at least part of an upper surface of each light-emitting portion, one second electrode formed directly on the conductive layer in each block, common switching wirings separately connected to the first electrodes, first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, n light-emitting portions (n is an even number) being arranged transversely in each block, and second grooves being formed in the conductive layer between adjacent light-emitting portions such that the second grooves are arranged short and long alternately, with the nearest one to the first groove being short.

    摘要翻译: 一种发光二极管阵列,其包括形成在基板上的导电层,形成在所述导电层上的多个分立的发光部,形成在所述导电层中的将所述发光部分分割成块的第一沟槽,每个形成的第一电极 在每个发光部分的上表面的至少一部分上,直接形成在每个块中的导电层上的一个第二电极,与第一电极分开连接的公共开关布线,分别连接到每个公共布线的第一接合焊盘,第一接合 每个连接到每个公共布线的焊盘和每个连接到每个第二电极的第二焊盘,在每个块中横向布置n个发光部分(n是偶数),并且在相邻光之间的导电层中形成第二凹槽 以使第二槽交替地布置成短而长,最靠近第一槽的一个是短的。

    Line change-over circuit and semiconductor memory using the same
    16.
    发明授权
    Line change-over circuit and semiconductor memory using the same 失效
    线路切换电路和使用其的半导体存储器

    公开(公告)号:US4641285A

    公开(公告)日:1987-02-03

    申请号:US640508

    申请日:1984-08-13

    CPC分类号: G11C29/78 G11C8/08

    摘要: The line change-over circuit suitable for the semiconductor memory having a redundancy memory column comprises a pair of transfer gate elements provided between a first node to which a first signal to be transmitted is supplied and a pair of transmission lines, first and second switch elements. The paired transfer gate elements are controlled on a switch in complementary manner each other according to a transfer signal. The first switch element is controlled on a switch according to the transfer signal, and the second switch element is controlled on a switch according to the first signal transmitted to one of the paired transmission lines. The first switch element turns one of the transmission lines to a fixed potential like ground potential when it is kept on, and the second switch element turns the other of the transmission lines to a fixed potential when it is kept on. The line change-over circuit in the above configuration is effective to prevent a floating state of the paired transmission lines.

    摘要翻译: 适用于具有冗余存储器列的半导体存储器的线转换电路包括一对传输门元件,其设置在提供有待传输的第一信号的第一节点与一对传输线之间,第一和第二开关元件 。 成对的传输门元件根据传输信号彼此互补地控制在开关上。 第一开关元件根据传输信号被控制在开关上,并且第二开关元件根据传输到一对传输线之一的第一信号被控制在开关上。 当第一开关元件保持接通时,第一开关元件将其中一个传输线转到固定电位,如接地电位,并且当第二开关元件保持接通时,第二开关元件将另一个传输线转到固定电位。 上述配置中的线路切换电路有效地防止成对的传输线路的浮动状态。

    5-Substituted-3-isoxazolecarboxylic acid derivatives
    17.
    发明授权
    5-Substituted-3-isoxazolecarboxylic acid derivatives 失效
    5-取代的3-异恶唑羧酸衍生物

    公开(公告)号:US4465631A

    公开(公告)日:1984-08-14

    申请号:US482544

    申请日:1983-04-06

    CPC分类号: C07D499/00

    摘要: A 5-substituted-3-isoxazolecarboxylic acid derivative of the general formula: ##STR1## wherein X stands for a phenyl group, thienyl group, furyl group or pyridyl group, each of which optionally may carry at least one substituent group; R stands for a phenyl group or hydroxyphenyl group; and A stands for a group of the formula: ##STR2## wherein Y stands for ##STR3## in which the carbon atom with which the carboxyl group combines with the nitrogen atom in A, M stands for a hydrogen atom or a substituent group, and Z stands for a hydrogen atom, hydroxy group, acyloxy group, carbamoyloxy group, aromatic heterocycle thio group or aromatic nitrogen-containing heterocycle quaternary ammonium group, is disclosed along with methods for producing these compounds.

    摘要翻译: 其中X代表苯基,噻吩基,呋喃基或吡啶基,其中每一个可以任选地带有至少一个取代基;一个5-取代的3-异恶唑羧酸衍生物,其通式如下: R代表苯基或羟基苯基; A代表下式的基团:其中Y代表其中羧基与A中的氮原子结合的碳原子,M代表氢原子或取代基的,以及 Z表示氢原子,羟基,酰氧基,氨基甲酰氧基,芳香族杂环硫基或芳香族含氮杂环季铵基,同时也包括这些化合物的制造方法。