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    Semiconductor device and method for manufacturing the same
    12.
    发明授权
    Semiconductor device and method for manufacturing the same 有权

    公开(公告)号：US09905516B2

    公开(公告)日：2018-02-27

    申请号：US14847461

    申请日：2015-09-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

    IPC: H01L23/00 ,  H01L29/786

    CPC classification number: H01L23/564 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A metal oxide layer is in contact with an interlayer insulating layer covering a transistor, and has a stacked-layer structure including a first metal oxide layer having an amorphous structure and a second metal oxide layer having a polycrystalline structure. In the first metal oxide layer, there are no crystal grain boundaries, and grid intervals are wide as compared to those in a metal oxide layer in a crystalline state; thus, the first metal oxide layer easily traps moisture between the lattices. In the second metal oxide layer having a polycrystalline structure, crystal parts other than crystal grain boundary portions have dense structures and extremely low moisture permeability. Thus, the structure in which the metal oxide layer including the first metal oxide layer and the second metal oxide layer is in contact with the interlayer insulating layer can effectively prevent moisture permeation into the transistor.

    Semiconductor device and method for manufacturing the same
    13.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09142681B2

    公开(公告)日：2015-09-22

    申请号：US13623913

    申请日：2012-09-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

    IPC: H01L29/04 ,  H01L21/336 ,  H01L29/786

    CPC classification number: H01L23/564 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A metal oxide layer is in contact with an interlayer insulating layer covering a transistor, and has a stacked-layer structure including a first metal oxide layer having an amorphous structure and a second metal oxide layer having a polycrystalline structure. In the first metal oxide layer, there are no crystal grain boundaries, and grid intervals are wide as compared to those in a metal oxide layer in a crystalline state; thus, the first metal oxide layer easily traps moisture between the lattices. In the second metal oxide layer having a polycrystalline structure, crystal parts other than crystal grain boundary portions have dense structures and extremely low moisture permeability. Thus, the structure in which the metal oxide layer including the first metal oxide layer and the second metal oxide layer is in contact with the interlayer insulating layer can effectively prevent moisture permeation into the transistor.

    Abstract translation: 金属氧化物层与覆盖晶体管的层间绝缘层接触，并且具有包括具有非晶结构的第一金属氧化物层和具有多晶结构的第二金属氧化物层的层叠结构。 在第一金属氧化物层中，与结晶状态的金属氧化物层相比，不存在晶粒边界，栅格间隔宽， 因此，第一金属氧化物层容易捕获晶格之间的水分。 在具有多晶结构的第二金属氧化物层中，除了晶界部分之外的晶体部分具有致密的结构和极低的透湿性。 因此，包括第一金属氧化物层和第二金属氧化物层的金属氧化物层与层间绝缘层接触的结构可以有效地防止水分渗入晶体管。

    SEMICONDUCTOR DEVICE
    14.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140103335A1

    公开(公告)日：2014-04-17

    申请号：US14047209

    申请日：2013-10-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Mitsuo Mashiyama ,  Takuya Handa ,  Masahiro Watanabe ,  Hajime Tokunaga

    IPC: H01L29/786

    CPC classification number: H01L27/1248 ,  G02F1/1368 ,  H01L21/70 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/50

    Abstract: Stable electrical characteristics of a transistor including an oxide semiconductor layer are achieved. A highly reliable semiconductor device including the transistor is provided. The semiconductor device includes a multilayer film formed of an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the oxide layer, and a gate electrode overlapping with the multilayer film with the gate insulating film interposed therebetween. The oxide layer contains a common element to the oxide semiconductor layer and has a large energy gap than the oxide semiconductor layer. The composition between the oxide layer and the oxide semiconductor layer gradually changes.

    Abstract translation: 实现了包括氧化物半导体层的晶体管的稳定的电特性。 提供了包括晶体管的高可靠性半导体器件。 半导体器件包括由氧化物层和氧化物半导体层形成的多层膜，与氧化物层接触的栅极绝缘膜，以及与多层膜重叠的栅电极，其间插入有栅极绝缘膜。 氧化物层包含与氧化物半导体层共同的元素，并且具有比氧化物半导体层大的能隙。 氧化物层和氧化物半导体层之间的组成逐渐变化。

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