公开(公告)号：US20210026188A1

公开(公告)日：2021-01-28

申请号：US16319649

申请日：2017-05-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu OHNO ,  Seiji YASUMOTO ,  Naoto GOTO ,  Hiroki ADACHI

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/1368

Abstract: A method for manufacturing a display device with low power consumption is provided.
A method for manufacturing a display device includes a step of forming a first layer over a substrate by using a material containing a resin or a resin precursor, a step of forming a first region and a second region thinner than the first region in the first layer, a step of forming a first resin layer including a first region and a second region thinner than the first region by performing first heat treatment on the first layer in a gas containing oxygen, a step of forming, over the first resin layer, a layer to be separated including a display element, and a step of separating the layer to be separated and the substrate from each other. A step of forming a conductive layer over the first resin layer in a position overlapping with the second region is included in the step of forming the layer to be separated. A step of exposing the conductive layer by removing the first resin layer is included after the step of separating the layer to be separated and the substrate from each other.

公开(公告)号：US20180085859A1

公开(公告)日：2018-03-29

申请号：US15707017

申请日：2017-09-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Seiji YASUMOTO ,  Naoto GOTO ,  Satoru IDOJIRI

IPC: B23K26/57 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1362

CPC classification number: B23K26/57 ,  G02F1/136286 ,  G02F2001/13613 ,  G02F2201/44 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3276 ,  H01L51/003 ,  H01L2227/326

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of the semiconductor device is increased. The semiconductor device is manufactured by performing a step of performing plasma treatment on a first surface of a substrate; a step of forming a first layer over the first surface with the use of a material containing a resin or a resin precursor; a step of forming a resin layer by performing heat treatment on the first layer; and a step of separating the substrate and the resin layer from each other. In the plasma treatment, the first surface is exposed to an atmosphere containing one or more of hydrogen, oxygen, and water vapor.

公开(公告)号：US20170033233A1

公开(公告)日：2017-02-02

申请号：US15219396

申请日：2016-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Naoto GOTO

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12 ,  G06F3/041 ,  H01L27/105 ,  H01L27/146 ,  C23C16/455 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78606 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  G06F1/1643 ,  G06F1/169 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04102 ,  G06F2203/04103 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14616 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a gate electrode over the second insulating film; a metal oxide film in contact with a side surface of the second insulating film; and a third insulating film over the oxide semiconductor film, the gate electrode, and the metal oxide film. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Abstract translation: 在包括氧化物半导体的晶体管中，抑制了电特性的变化，提高了可靠性。 晶体管包括在第一绝缘膜上的氧化物半导体膜; 氧化物半导体膜上的第二绝缘膜; 第二绝缘膜上的栅电极; 与所述第二绝缘膜的侧面接触的金属氧化物膜; 以及氧化物半导体膜上的第三绝缘膜，栅电极和金属氧化物膜。 氧化物半导体膜包括与栅电极重叠的沟道区域，与第三绝缘膜接触的源极区域和与第三绝缘膜接触的漏极区域。 源区和漏区含有氢，硼，碳，氮，氟，磷，硫，氯，钛和稀有气体中的一种或多种。

公开(公告)号：US20240423027A1

公开(公告)日：2024-12-19

申请号：US18706407

申请日：2022-11-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daiki NAKAMURA ,  Nozomu SUGISAWA ,  Masahiro KATAYAMA ,  Naoto GOTO ,  Kenichi OKAZAKI

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/38 ,  H10K71/60 ,  H10K102/00

Abstract: A display device with high display quality is provided. The display device includes a first organic insulating layer, a first inorganic insulating layer and a second inorganic insulating layer over the first organic insulating layer, a first light-emitting element, a second light-emitting element, and a second organic insulating layer. The first light-emitting element includes a first pixel electrode over the first inorganic insulating layer, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer. The second light-emitting element includes a second pixel electrode over the second inorganic insulating layer, a second EL layer over the second pixel electrode, and the common electrode over the second EL layer. The second organic insulating layer is provided between the first EL layer and the second EL layer, and the common electrode is provided over the second organic insulating layer. The first organic insulating layer includes a depressed portion in a region overlapping with the second organic insulating layer, the first inorganic insulating layer includes a first projecting portion overlapping with the depressed portion, and the second inorganic insulating layer includes a second projecting portion overlapping with the depressed portion.

公开(公告)号：US20240114755A1

公开(公告)日：2024-04-04

申请号：US18236965

申请日：2023-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Nozomu SUGISAWA ,  Yasumasa YAMANE ,  Daiki NAKAMURA ,  Tsunenori SUZUKI ,  Naoto GOTO ,  Yasutaka NAKAZAWA

IPC: H10K59/80 ,  H10K59/12

CPC classification number: H10K59/8793 ,  H10K59/1201

Abstract: A novel display apparatus that is highly convenient, useful, or reliable is provided. The display apparatus includes a first light-emitting device including a first electrode, a first layer, a first unit, and a second electrode and a second light-emitting device including a third electrode, a second layer, a second unit, and a fourth electrode. The first unit is between the first electrode and the second electrode and includes a first light-emitting material. The first layer is between the first unit and the first electrode and is in contact with the first electrode. The third electrode is adjacent to the first electrode. A first gap is between the third electrode and the first electrode. The second unit is between the third electrode and the fourth electrode and includes a second light-emitting material. The second layer is between the second unit and the third electrode and is in contact with the third electrode. The first layer and the second layer use a material having a first spin density and a material having a second spin density higher than the first spin density, respectively, each observed with an electron spin resonance (ESR) spectrometer when the material is in a film state.

公开(公告)号：US20240040846A1

公开(公告)日：2024-02-01

申请号：US18264476

申请日：2022-01-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Rai SATO ,  Masahiro KATAYAMA ,  Naoto GOTO ,  Yasutaka NAKAZAWA ,  Kenichi OKAZAKI

IPC: H10K59/122 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/35

Abstract: A display device with high resolution is provided. A display device with a high aperture ratio is provided. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, a first EL layer, a second EL layer, and a common electrode. The first insulating layer covers end portions of the first pixel electrode and the second pixel electrode. The second insulating layer is provided over the first pixel electrode, the second pixel electrode, and the first insulating layer and covers an end portion of the first insulating layer. The first EL layer is provided over the first pixel electrode and the second EL layer is provided over the second pixel electrode. An end portion of the first EL layer and an end portion of the second EL layer face each other and overlap with the first insulating layer. The common electrode includes a portion overlapping with the first EL layer and a portion overlapping with the second EL layer. The first insulating layer includes an organic resin, and the second insulating layer includes an inorganic insulating material.

公开(公告)号：US20160276486A1

公开(公告)日：2016-09-22

申请号：US15070306

申请日：2016-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Takahiro IGUCHI ,  Naoto GOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics and improve reliability in a transistor including an oxide semiconductor film. Provided is a semiconductor device including a transistor including a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film as a second gate electrode over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second insulating film includes an excess oxygen region having a concentration gradient.

Abstract translation: 抑制包含氧化物半导体膜的晶体管的电特性变化和提高可靠性。 本发明提供一种半导体器件，包括晶体管，其包括第一栅电极，第一栅电极上的第一绝缘膜，第一绝缘膜上的第一氧化物半导体膜，电连接到第一氧化物半导体膜的源电极，漏电极 电连接到第一氧化物半导体膜，在第一氧化物半导体膜上方的第二绝缘膜，在第二绝缘膜上的作为第二栅电极的第二氧化物半导体膜，以及在第二氧化物半导体膜上的第三绝缘膜。 第二绝缘膜包括具有浓度梯度的过量氧区域。

公开(公告)号：US20140209897A1

公开(公告)日：2014-07-31

申请号：US14161975

申请日：2014-01-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke KUBOTA ,  Ryo HATSUMI ,  Masami JINTYOU ,  Takumi SHIGENOBU ,  Naoto GOTO

IPC: H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13415 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04108 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/127 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

Abstract translation: 提供了具有高开口率并且包括能够增加充电容量的电容器的半导体器件。 半导体器件包括：衬底上的晶体管，衬底上的第一透光导电膜，覆盖晶体管的氧化物绝缘膜，并且在第一透光导电膜上具有开口;氧化物绝缘膜上的氮化物绝缘膜 并且与开口部中的第一透光性导电膜接触，与该晶体管连接并具有开口部的凹部的第二透光性导电膜，以及第二透光性导电膜， 传输导电膜被填充。

公开(公告)号：US20240244887A1

公开(公告)日：2024-07-18

申请号：US18390937

申请日：2023-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka NAKAZAWA ,  Naoto GOTO ,  Kenichi OKAZAKI ,  Takayuki OHIDE

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/80

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/80515

Abstract: A method for manufacturing a novel display device that is highly convenient, useful, or reliable is to be provided. A first film is formed over a first electrode and a second electrode in a second step in the manufacturing method; a second film is formed over the first film in a third step; a third film is formed over the second film by a CVD method in a fourth step; part of the third film located above the second electrode is removed by an etching method to form a first layer overlapping with the first electrode in a fifth step; and part of the second film and part of the first film each located above the second electrode are removed by an etching method using the first layer to form a second layer and a first unit each overlapping with the first electrode in a sixth step.

公开(公告)号：US20240099069A1

公开(公告)日：2024-03-21

申请号：US18276078

申请日：2022-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Rai SATO ,  Masahiro KATAYAMA ,  Naoto GOTO ,  Yasutaka NAKAZAWA ,  Kenichi OKAZAKI

IPC: H10K59/122 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K59/1201

Abstract: A high-resolution display device is provided. A display device with both high display quality and high resolution is provided. The display device includes a first display element including a first pixel electrode, a first EL layer, and a common electrode; a second display element including a second pixel electrode, a second EL layer, and the common electrode; a first insulating layer covering an end portion of the first pixel electrode and an end portion of the second pixel electrode; a second insulating layer over the first insulating layer; and a third insulating layer over the second insulating layer. The first EL layer is placed over the first pixel electrode and the third insulating layer. The second EL layer is placed over the second pixel electrode and the third insulating layer.