利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

22 条记录 (耗时 0.032 秒)

    LITHIUM ION SECONDARY BATTERY AND METHOD FOR MANUFACTURING THE SAME
    11.
    发明申请
    LITHIUM ION SECONDARY BATTERY AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20200185763A1

    公开(公告)日：2020-06-11

    申请号：US16791328

    申请日：2020-02-14

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Tomoya FUTAMURA ,  Tamae MORIWAKA ,  Takahiro KAWAKAMI ,  Junpei MOMO ,  Nobuhiro INOUE

    IPC分类号： H01M10/0525 ,  H01M4/66 ,  H01M4/36 ,  H01M4/13 ,  H01M4/58 ,  H01M4/136

    摘要： A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.

    LITHIUM ION SECONDARY BATTERY AND METHOD FOR MANUFACTURING THE SAME
    13.
    发明申请
    LITHIUM ION SECONDARY BATTERY AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20220263119A1

    公开(公告)日：2022-08-18

    申请号：US17736687

    申请日：2022-05-04

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Tomoya FUTAMURA ,  Tamae MORIWAKA ,  Takahiro KAWAKAMI ,  Junpei MOMO ,  Nobuhiro INOUE

    IPC分类号： H01M10/0525 ,  H01M4/136 ,  H01M4/58 ,  H01M4/13 ,  H01M4/36 ,  H01M4/66

    摘要： A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.

    SEMICONDUCTOR DEVICE
    14.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190189622A1

    公开(公告)日：2019-06-20

    申请号：US16275380

    申请日：2019-02-14

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Tomoaki ATSUMI ,  Shuhei NAGATSUKA ,  Tamae MORIWAKA ,  Yuta ENDO

    IPC分类号： H01L27/115 ,  H01L29/24 ,  G11C11/24 ,  H01L27/06 ,  H01L27/1156 ,  H01L29/786 ,  G11C11/408 ,  G11C11/403 ,  G11C8/14 ,  G11C7/16 ,  H01L27/11551

    摘要： [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed.[Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j≥2, the jth sub memory cell is arranged over the j-1th sub memory cell.[Selected Drawing] FIG. 8

    SEMICONDUCTOR DEVICE
    17.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20170243874A1

    公开(公告)日：2017-08-24

    申请号：US15591150

    申请日：2017-05-10

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Tomoaki ATSUMI ,  Shuhei NAGATSUKA ,  Tamae MORIWAKA ,  Yuta ENDO

    IPC分类号： H01L27/115 ,  H01L29/24 ,  G11C11/24 ,  H01L29/786

    CPC分类号： H01L27/115 ,  G11C7/16 ,  G11C8/14 ,  G11C11/24 ,  G11C11/403 ,  G11C11/4085 ,  H01L27/0688 ,  H01L27/11551 ,  H01L27/1156 ,  H01L29/24 ,  H01L29/7869

    摘要： [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed.[Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j≧2, the jth sub memory cell is arranged over the j−1th sub memory cell.