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58 条记录 (耗时 0.027 秒)

    Nonvolatile memory device and methods of operating and fabricating the same
    13.
    发明授权
    Nonvolatile memory device and methods of operating and fabricating the same 有权
    非易失存储器件及其操作和制造方法

    公开(公告)号：US07872249B2

    公开(公告)日：2011-01-18

    申请号：US11723018

    申请日：2007-03-15

    申请人： Yoon-dong Park ,  Myoung-jae Lee ,  Dong-chul Kim ,  Seung-eon Ahn

    发明人： Yoon-dong Park ,  Myoung-jae Lee ,  Dong-chul Kim ,  Seung-eon Ahn

    IPC分类号： H01L47/00

    CPC分类号： H01L27/24 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C16/0475 ,  G11C2013/0073 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/76

    摘要： Provided is a nonvolatile memory device and method of operating and fabricating the same for higher integration and higher speed, while allowing for a lower operating current. The nonvolatile memory device may include a semiconductor substrate. Resistive layers each storing a variable resistive state may be formed on the surface of the semiconductor substrate. Buried electrodes may be formed on the semiconductor substrate under the resistive layers and may connect to the resistive layers. Channel regions may be formed on the surface of the semiconductor substrate and connect adjacent resistive layers to each other, but not to the buried electrodes. Gate insulating layers may be formed on the channel regions of the semiconductor substrate. Gate electrodes may be formed on the gate insulating layers and extend over the resistive layers.

    摘要翻译： 提供了一种非易失性存储器件及其操作和制造方法，用于更高的集成度和更高的速度，同时允许较低的工作电流。 非易失性存储器件可以包括半导体衬底。 各自存储可变电阻状态的电阻层可以形成在半导体衬底的表面上。 掩埋电极可以形成在半导体衬底下的电阻层下，并且可以连接到电阻层。 通道区域可以形成在半导体衬底的表面上，并且将相邻的电阻层彼此连接，而不是埋入电极。 栅极绝缘层可以形成在半导体衬底的沟道区上。 栅电极可以形成在栅极绝缘层上并在电阻层上延伸。

    Nonvolatile memory device and methods of operating and fabricating the same
    15.
    发明申请
    Nonvolatile memory device and methods of operating and fabricating the same 有权
    非易失存储器件及其操作和制造方法

    公开(公告)号：US20080012064A1

    公开(公告)日：2008-01-17

    申请号：US11723018

    申请日：2007-03-15

    申请人： Yoon-dong Park ,  Myoung-jae Lee ,  Dong-chul Kim ,  Seung-eon Ahn

    发明人： Yoon-dong Park ,  Myoung-jae Lee ,  Dong-chul Kim ,  Seung-eon Ahn

    IPC分类号： H01L29/76

    CPC分类号： H01L27/24 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C16/0475 ,  G11C2013/0073 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/76

    摘要： Provided is a nonvolatile memory device and method of operating and fabricating the same for higher integration and higher speed, while allowing for a lower operating current. The nonvolatile memory device may include a semiconductor substrate. Resistive layers each storing a variable resistive state may be formed on the surface of the semiconductor substrate. Buried electrodes may be formed on the semiconductor substrate under the resistive layers and may connect to the resistive layers. Channel regions may be formed on the surface of the semiconductor substrate and connect adjacent resistive layers to each other, but not to the buried electrodes. Gate insulating layers may be formed on the channel regions of the semiconductor substrate. Gate electrodes may be formed on the gate insulating layers and extend over the resistive layers.

    摘要翻译： 提供了一种非易失性存储器件及其操作和制造方法，用于更高的集成度和更高的速度，同时允许较低的工作电流。 非易失性存储器件可以包括半导体衬底。 各自存储可变电阻状态的电阻层可以形成在半导体衬底的表面上。 掩埋电极可以形成在半导体衬底下的电阻层下，并且可以连接到电阻层。 通道区域可以形成在半导体衬底的表面上，并且将相邻的电阻层彼此连接，而不是埋入电极。 栅极绝缘层可以形成在半导体衬底的沟道区上。 栅电极可以形成在栅极绝缘层上并在电阻层上延伸。

    Resistive random access memory device and methods of manufacturing and operating the same
    20.
    发明申请
    Resistive random access memory device and methods of manufacturing and operating the same 有权
    电阻式随机存取存储器件及其制造和操作方法

    公开(公告)号：US20080296550A1

    公开(公告)日：2008-12-04

    申请号：US12149809

    申请日：2008-05-08

    申请人： Chang-bum Lee ,  Young-soo Park ,  Xianyu Wenxu ,  Bo-soo Kang ,  Seung-eon Ahn

    发明人： Chang-bum Lee ,  Young-soo Park ,  Xianyu Wenxu ,  Bo-soo Kang ,  Seung-eon Ahn

    IPC分类号： H01L47/00

    CPC分类号： H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253

    摘要： Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first electrode, at least one second electrode spaced apart from the at least one first electrode, a first structure including a first resistance-changing layer between the at least one first and second electrodes, and a first switching element electrically connected to the first resistance-changing layer, wherein at least one of the first and second electrodes include an alloy layer having a noble metal and a base metal.

    摘要翻译： 提供可以是电阻随机存取存储器（RRAM）装置及其制造和操作方法。 电阻式随机存取存储器件可以包括至少一个第一电极，与至少一个第一电极间隔开的至少一个第二电极，包括在至少一个第一和第二电极之间的第一电阻变化层的第一结构，以及 电连接到第一电阻变化层的第一开关元件，其中第一和第二电极中的至少一个包括具有贵金属和贱金属的合金层。