公开(公告)号：US20060266957A1

公开(公告)日：2006-11-30

申请号：US11135307

申请日：2005-05-24

申请人： Shengwu Chang ,  Joseph Olson ,  Damian Brennan

发明人： Shengwu Chang ,  Joseph Olson ,  Damian Brennan

IPC分类号： H01J37/302

CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/24542 ,  H01J2237/30483 ,  H01J2237/31703

摘要： A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.

摘要翻译： 公开了一种用于离子注入机系统中均匀性调谐的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机系统中的均匀性调谐的方法。 该方法可以包括在沿着光束路径的多个预定位置处测量离子束。 该方法还可以包括至少部分地基于多个预定位置处的离子束测量来计算沿着光束路径的离子束分布。 该方法可以进一步包括至少部分地基于所计算的离子束分布来确定沿着光束路径的期望速度分布，使得当根据期望的速度分布扫描时，离子束沿着光束路径产生期望的离子束分布 。

公开(公告)号：US20060249696A1

公开(公告)日：2006-11-09

申请号：US11123082

申请日：2005-05-06

申请人： Shengwu Chang ,  Joseph Olson ,  Damian Brennan

发明人： Shengwu Chang ,  Joseph Olson ,  Damian Brennan

IPC分类号： H01J37/302 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J2237/30411 ,  H01J2237/31703

摘要： A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.

摘要翻译： 公开了一种用于调整离子注入机系统的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于调整具有多个光束线元件的离子注入系统的方法。 该方法可以包括在多个波束线元件之间建立一个或多个关系。 该方法还可以包括至少部分地基于一个或多个已建立的关系以协调的方式调整多个光束线元件以产生期望的光束输出。

公开(公告)号：US20060169911A1

公开(公告)日：2006-08-03

申请号：US11272193

申请日：2005-11-10

申请人： Anthony Renau ,  Joseph Olson ,  Shengwu Chang ,  James Buff

发明人： Anthony Renau ,  Joseph Olson ,  Shengwu Chang ,  James Buff

IPC分类号： H01J1/50

CPC分类号： H01J37/1475 ,  H01J37/026 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/0042 ,  H01J2237/055

摘要： A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.

摘要翻译： 公开了一种用于通过将电子限制在其磁性区域内以减少电子损失并因此提高低能量束的传输效率来改进邻近离子注入机的磁体的空间电荷中和的方法和装置。 提供了一种用于离子注入机的磁体的磁极构件，其包括具有与磁极构件相邻形成磁场浓度的多个磁场浓度构件的外表面。 遇到这种增加的磁场的电子沿着相同的磁场线被击退，而不是允许逃逸。 还提供了包括磁极的分析器磁体和离子注入机，从而实现了在离子注入机中提高低能量离子束空间电荷中和的方法。

公开(公告)号：US20060240651A1

公开(公告)日：2006-10-26

申请号：US11114593

申请日：2005-04-26

申请人： Anthony Renau ,  Dennis Rodier ,  Joseph Olson ,  Bret Adams

发明人： Anthony Renau ,  Dennis Rodier ,  Joseph Olson ,  Bret Adams

IPC分类号： H01L21/425

CPC分类号： H01L22/20

摘要： A method for processing a substrate, such as a semiconductor wafer, includes performing a measurement to determine a substrate parameter distribution to be compensated, determining an adjusted implant parameter distribution to compensate for the substrate parameter distribution, and implanting the substrate in accordance with the adjusted implant parameter distribution. The substrate parameter distribution to be compensated may result from another process step and may be uniform or non-uniform. In another embodiment, an implant parameter may be varied as a function of implant position on the substrate to achieve different substrate parameter values in different areas of the substrate.

摘要翻译： 用于处理诸如半导体晶片的衬底的方法包括执行测量以确定要补偿的衬底参数分布，确定调整的植入参数分布以补偿衬底参数分布，以及根据所调整的衬底参数分布来植入衬底 植入参数分布。 要补偿的衬底参数分布可以由另一个工艺步骤产生，并且可以是均匀的或不均匀的。 在另一个实施例中，植入参数可以作为衬底上的植入位置的函数而变化，以在衬底的不同区域中实现不同的衬底参数值。

公开(公告)号：US20060169915A1

公开(公告)日：2006-08-03

申请号：US11269033

申请日：2005-11-08

申请人： Joseph Olson ,  Anthony Renau ,  Donna Smatlak ,  Kurt Deckerlucke ,  Paul Murphy ,  Alexander Perel ,  Russell Low ,  Peter Kurunczi

发明人： Joseph Olson ,  Anthony Renau ,  Donna Smatlak ,  Kurt Deckerlucke ,  Paul Murphy ,  Alexander Perel ,  Russell Low ,  Peter Kurunczi

IPC分类号： H01L21/336 ,  H01J27/00

CPC分类号： H01J37/08 ,  H01J27/08 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/0825 ,  H01J2237/0827 ,  H01J2237/31701

摘要： Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.

摘要翻译： 提供了用于在冷操作模式中产生分子离子并用于在热操作模式中产生原子离子的离子源和方法。 在一些实施例中，第一和第二电子源位于电弧室的相对端。 第一电子源在冷操作模式下通电，并且第二电子源在热操作模式下通电。 在其他实施例中，电子以冷操作模式被引导通过阴极中的孔，并且在热操作模式中被引导到阴极。 在另外的实施例中，离子束发生器包括分子离子源，原子离子源和用于选择一个离子源的输出的开关元件。

公开(公告)号：US20060145095A1

公开(公告)日：2006-07-06

申请号：US11027371

申请日：2004-12-30

申请人： Joseph Olson ,  Anthony Renau

发明人： Joseph Olson ,  Anthony Renau

IPC分类号： H01J37/08

CPC分类号： H01J37/3171

摘要： A method for implanting ions into a workpiece, such as a semiconductor wafer, includes generating an ion beam, providing a workpiece support surface to support a workpiece during ion implantation, deflecting the ion beam to provide a desired incidence angle of the deflected ion beam relative to the workpiece support surface, and performing an implant with the ion beam deflected at the desired incidence angle relative to the workpiece support surface. The incidence angle may be measured, and the beam deflection may be adjusted based on a comparison of the measured incidence angle and the desired incidence angle.

摘要翻译： 用于将离子注入到诸如半导体晶片的工件中的方法包括产生离子束，在离子注入期间提供工件支撑表面以支撑工件，偏转离子束以提供偏转的离子束相对的期望入射角 并且以相对于工件支撑表面以期望的入射角偏转的离子束来执行植入。 可以测量入射角，并且可以基于测量的入射角和期望的入射角的比较来调整光束偏转。

公开(公告)号：US20050194550A1

公开(公告)日：2005-09-08

申请号：US10794850

申请日：2004-03-05

申请人： Russell Low ,  Joseph Olson ,  Curt Bergeron ,  Eric Cobb ,  Jeffrey Burgess

发明人： Russell Low ,  Joseph Olson ,  Curt Bergeron ,  Eric Cobb ,  Jeffrey Burgess

IPC分类号： H01J37/08

CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/06308 ,  H01J2237/082

摘要： A cathode system having a cathode element configured to extend through an aperture in a wall of an arc chamber of an ion implanter system. A gas flow through a spacing between the cathode element and the aperture is restricted by a restriction member. A method of ionizing a source gas and a cathode element incorporating the restriction member are also provided.

摘要翻译： 一种具有阴极元件的阴极系统，其被配置为延伸穿过离子注入系统的电弧室的壁中的孔。 通过限制部件限制通过阴极元件和孔之间的间隔的气流。 还提供了一种电离源气体和结合有限制构件的阴极元件的方法。

公开(公告)号：US20060219954A1

公开(公告)日：2006-10-05

申请号：US11241894

申请日：2005-09-30

申请人： Russell Low ,  Joseph Olson ,  David Timberlake ,  James McLane ,  Mark Saunders ,  James Cummings ,  Thomas Callahan ,  Jonathan England

发明人： Russell Low ,  Joseph Olson ,  David Timberlake ,  James McLane ,  Mark Saunders ,  James Cummings ,  Thomas Callahan ,  Jonathan England

IPC分类号： H01J37/08 ,  G21K5/10

CPC分类号： H01J37/304 ,  H01J37/3171 ,  H01J2237/30455 ,  H01J2237/31761 ,  Y10S438/961

摘要： An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer. The operating parameter may be an output voltage of an extraction power supply, or other voltages and/or currents of beamline components that affect the path of the ion beam.

摘要翻译： 离子注入机包括静止的平面离子束的源，一组束线分量，其通过由第一操作参数值确定的沿正常光束路径引导离子束;终端，其通过正常光束路径机械扫描晶片 以及在注入期间响应于离子束中的毛刺的控制电路通过（1）立即将至少一个束线分量的操作参数改变为第二值，以将离子束引导离开正常光束路径，从而 在晶片上的植入转变位置处停止植入，（2）随后将晶片移动到植入恢复位置，其中晶片上的注入转变位置直接位于离子束的正常路径上，并且（3） 操作参数到其第一值以引导离子束沿着正常光束路径并在晶片上的注入转变位置处恢复离子注入。 操作参数可以是提取电源的输出电压，或影响离子束路径的束线组件的其他电压和/或电流。

公开(公告)号：US20060208203A1

公开(公告)日：2006-09-21

申请号：US11146064

申请日：2005-06-07

申请人： Atul Gupta ,  Joseph Olson

发明人： Atul Gupta ,  Joseph Olson

IPC分类号： H01J37/302 ,  H01J37/317

CPC分类号： H01L21/26586 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24528 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01L29/66803 ,  H01L29/785

摘要： A technique for ion beam angle process control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle process control in an ion implanter system. The method may comprise directing one or more ion beams at a substrate surface. The method may also comprise determining an average spread of incident angles at which the one or more ion beams strike the substrate surface. The method may further comprise adjusting the one or more ion beams based at least in part on the average spread of incident angles to produce a desired spread of ion beam incident angles.

摘要翻译： 公开了一种用于离子束角过程控制的技术。 在一个特定的示例性实施例中，该技术可以被实现为离子注入机系统中的离子束角度过程控制的方法。 该方法可以包括在衬底表面处引导一个或多个离子束。 该方法还可以包括确定一个或多个离子束撞击衬底表面的入射角的平均扩展。 该方法还可以包括至少部分地基于入射角的平均扩展来调整一个或多个离子束，以产生期望的离子束入射角的扩展。

公开(公告)号：US20060163489A1

公开(公告)日：2006-07-27

申请号：US11044659

申请日：2005-01-27

申请人： Russell Low ,  Eric Cobb ,  Joseph Olson ,  Leo Klos

发明人： Russell Low ,  Eric Cobb ,  Joseph Olson ,  Leo Klos

IPC分类号： H01J27/00

CPC分类号： H01J27/08

摘要： An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.

摘要翻译： 离子注入机具有源电弧室，该电弧室包括在电弧室的排斥端处的导电端壁，端壁具有围绕开口的中心部分。 陶瓷绝缘体固定在端壁的外表面上，例如通过外周螺纹与端壁的凹陷区域的周边处的配合螺纹啮合。 导电排斥器具有固定到绝缘体并延伸通过端壁开口的窄轴，以及设置在源弧室内与主体壁相邻的主体。 端壁，绝缘体和推斥器构造成在端壁的中心部分与（i）推斥体之间形成连续的真空间隙，（ii）推斥轴，和（iii）绝缘体。 绝缘体内表面可以具有脊状横截面。