Abstract:
Disclosed is a gate drive circuit. The circuit includes multiple stages of gate drive units, and a gate drive unit in each stage includes a pull-up control module which outputs a pull-up control signal based on a previous stage of gate drive signal, a first pull-up module connected to the pull-up control module, a boost module connected to the first pull-up module, a second pull-up module connected to the first pull-up module, and a pull-down module connected to the first pull-up module and the second pull-up module.
Abstract:
The invention provides a thin film transistor (TFT) array substrate and a display panel. The TFT array substrate is disposed with multiple pixels arranged in an array. Each pixel includes first through third sub-pixels sequentially arranged along a first direction. The first through third sub-pixels are connected to a same scan line. The TFT array substrate further is disposed with first through third data lines sequentially arranged along the first direction. The first through third data lines respectively are for driving the first through third sub-pixels. The first sub-pixel includes first and second areas, the second sub-pixel includes third and fourth areas, and the third sub-pixel includes fifth and sixth areas, arranged along a second direction. A voltage difference between a sub-pixel electrode in the sixth area and a common electrode is different from a voltage difference between a sub-pixel electrode in the fifth area and the common electrode.
Abstract:
The present embodiment is provided for a circuit of display panel, wherein comprising a signal wire extending along the first direction, a public electrode wire extending along the second direction, a pixel electrode, the first discharge circuit and the second discharge circuit, each signal wire is electrical connecting with the public electrode wire with the first discharge circuit and the second discharge circuit, the first discharge circuit and the second discharge circuit is in series, the pixel electrode is connecting on the intersection point between the first discharge circuit and the second discharge circuit.
Abstract:
An LTPS array substrate and a method for producing the same are proposed. The method includes: forming a gate of a thin-film transistor (TFT) of the LTPS array substrate on a substrate; forming a first insulating layer, a semiconductor layer, and a positive photoresist layer on the substrate one by one; exposing one side of the substrate on the opposite side of the gate for forming a polycrystalline silicon layer; forming a second insulating layer on the substrate of the polycrystalline silicon layer; forming a source and a drain of the TFT on the second insulating layer so that the source and the drain is electrically connected to the polycrystalline silicon layer via a contact hole. The use of masks in types and in numbers in the LTPS technology will be reduced. So, both of the processes and the production costs are reduced.
Abstract:
An array substrate is described. The array substrate with a polarity inversion of drive voltage signal in a plurality of data lines comprises a plurality of gate line sets being sequentially arranged, wherein each gate line set comprises two gate lines having an odd gate line and an even gate line respectively; a plurality of data line sets being sequentially arranged and vertically interlaced with the gate line sets, wherein each data line set comprises two data lines having an odd data line and an even data line respectively; wherein a plurality of sub-pixels are sequentially disposed between two adjacent gate line sets, connection positions of a portion of sub-pixels to the odd gate line and the even gate line in one gate line set respectively are changed in a predetermined amount of data line spaced apart.
Abstract:
A liquid crystal display panel and a fan-out area thereof are provided. The fan-out area is arranged in a peripheral circuit area of the liquid crystal display panel and includes a middle wire and multiple fan-out wires arranged at two sides thereof. The middle wire and the fan-out wires each are disposed with at least one first wire pattern. Along each of directions toward the middle wire, widths of the first wire patterns of different wires are successively increased and/or lengths of the first wire patterns are successively decreased. The first wire patterns of a same wire have same width and length. Accordingly, the present invention can reduce the resistance differences among the wires in the fan-out area, color washout and non-uniform brightness caused by the resistance differences can be relieved or avoided, and is beneficial to the narrow border design of the liquid crystal display panel.
Abstract:
The present invention provides an array substrate, a flat display panel and a manufacturing for the same. The array substrate includes a substrate, a common electrode disposed on the substrate, an insulation layer disposed on the common electrode, wherein, the insulation layer includes multiple first regions and multiple second regions, and the first regions and the second regions are disposed alternately, and multiple pixel electrodes respectively disposed on the first regions of the insulation layer. Wherein, a thickness of the first regions and a thickness of the second regions are different. Through above way, the electric field strength between pixel electrodes and the electric field strength above the pixel electrodes can be adjusted in order to increase the display quality of the flat display panel.
Abstract:
The present invention proposes a low temperature poly-silicon thin-film transistor having a dual-gate structure and a method for forming the low temperature poly-silicon thin-film transistor. The low temperature poly-silicon thin-film transistor includes: a substrate, one or more patterned amorphous silicon (a-Si) layers, disposed in a barrier layer on the substrate, for forming a bottom gate, an NMOS disposed on the barrier layer, and a PMOS disposed on the barrier layer. The NMOS comprises a patterned gate electrode (GE) layer as a top gate, and the patterned GE layer and the bottom gate formed by the one or more patterned a-Si layers form a dual-gate structure. The present invention proposes a low temperature poly-silicon thin-film transistor with a more stabilized I-V characteristic, better driving ability, low power consumption, and higher production yield.
Abstract:
A liquid crystal display panel and a display device are provided. The liquid crystal display panel comprises a plurality of pixel units arranged as an array. Each pixel unit comprises at least three sub pixels of different colors. In each pixel unit, a primary region of each of some of the sub pixels has a larger brightness than a secondary region thereof, and each of the rest sub pixels has a consistent brightness.
Abstract:
A display device and a testing line repairing method thereof is provided herein and the method comprises steps of: cutting off a connection between a first input end of a first thin film transistor (TFT), a first output end and a testing signal input line; and connecting a first dummy line and a testing signal output line by a laser welding method. The width-to-length ration in the display device of the present disclosure won't be varied and an abnormal display in the light-on testing won't happen.