Abstract:
An exposure apparatus usable with synchrotron radiation source wherein the synchrotron radiation is generated by electron injection into a ring. The exposure apparatus is to transfer a semiconductor element pattern of a mask onto a semiconductor wafer by the synchrotron radiation. The apparatus includes a shutter for controlling the exposure of the wafer. The shutter controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined in response to the electron injection, and thereafter, the illuminance distribution is corrected in a predetermined manner. By this, the illuminance distribution data for controlling the shutter always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer are exposed with high precision.
Abstract:
A charged particle beam drawing apparatus includes an electrostatic lens including an electrode member and configured to project the plurality of charged particle beams onto the substrate via the electrode member. In the electrode member are formed a plurality of first openings via which the plurality of charged particle beams pass, and a plurality of second openings different from the plurality of first openings, a total area of the plurality of second openings being not smaller than a total area of the plurality of first openings.
Abstract:
An exposure apparatus which projects exposure light from a pattern of an illuminated original onto a substrate, comprises a projection system including an optical element and configured to project the exposure light onto the substrate, an enclosure configured to enclose the projection system, and a cleaning mechanism configured to clean the optical element by irradiating the optical element with ultraviolet light under an environment in which oxygen is present within the enclosure, the cleaning mechanism including a light source configured to generate ultraviolet light, a tubular member including an exit window and configured to partially enclose an optical path between the light source and the optical element, and a regulating device configured to regulate an environment of a space inside the tubular member so that a partial pressure of oxygen becomes lower in the space inside the tubular member than in a space which is outside the tubular member.
Abstract:
An exposure apparatus includes a chamber where an optical element having a capping layer is arranged, and exposes a substrate by using the optical element. The exposure apparatus includes a supply unit which supplies a material to repair the capping layer into the chamber, and a providing unit which provides electromagnetic waves to the optical element. The electromagnetic waves cause a photochemical reaction of the material to grow a layer on the capping layer so as to repair the capping layer.
Abstract:
An exposure apparatus which projects a pattern formed on a mask onto a substrate by using exposure light. The apparatus includes a shielding member which surrounds a light path space through which exposure light passes and has a passage which makes the light path space communicate with an ambient space, and a gas supply system which supplies inert gas to the light path space surrounded by the shielding member. A direction of the passage coincides with a flow direction of an ambient atmosphere which flows through the ambient space, and the passage includes a first passage and a second passage. The first passage is located at a position upstream, with respect to the flow direction, relative to the second passage, and the first passage is smaller in section than the second passage.
Abstract:
An X-ray mask structure and X-ray exposure method using the same are disclosed, wherein the mask has an X-ray absorptive material pattern, a supporting film for supporting the pattern, and a holding frame for holding the supporting film, wherein a suction port is arranged to be communicated with an external gas drawing system, and wherein a supply port is provided so that a gas can be supplied therethrough, for prevention of dust adhesion to the mask.
Abstract:
An X-ray exposure apparatus includes a partition structure for defining therein an ambience of one of an atmospheric pressure and a reduced pressure, for accommodating an X-ray mask and an article to be exposed, an X-ray window provided on the partition structure for spatially isolating the inside of the partition structure and an X-ray source, and having a function for transmitting therethrough an X-ray beam with which the article as placed inside the partition structure can be exposed through the X-ray mask, and a scanning mechanism for scanningly moving the X-ray window in a direction intersecting with an optical axis of the X-ray beam, in a single exposure and without interruption at least from just before the start of the exposure to just after the end of the exposure.
Abstract:
An electron beam exposure apparatus, which illuminates a mask with light emitted by a light source, photoelectrically converts the light patterned by the mask using a photoelectric converter, and exposes an object to be exposed with a patterned electron beam emitted by the photoelectric converter. The apparatus includes an electron optical system for imaging the electron beam emitted by the photoelectric converter onto the object, an axial shifter for shifting an optical center of the electron optical system in a direction perpendicular to an optical axis, an axial deflector for deflecting the electron beam that propagates in the electron optical system, a region limiter for limiting a region of the mask to be projected onto the object via the photoelectric converter and the electron optical system to a partial region of the mask, and a scan controller for scanning the object with the region-limited electron beam by changing the partial region to be limited while controlling the axial shifter and axial deflector.
Abstract:
An exposure apparatus for lithographically transferring a pattern of a mask onto a workpiece coated with a radiation sensitive material includes a first filter made the same material as of the substrate of the mask, a second filter formed by a base member made of the same material as the mask substrate and being coated with a radiation sensitive material, an illuminometer for measuring illuminance of light passed through the first and second filters, respectively, and a control device for determining an exposure time for lithographic transfer of the pattern of the mask onto the wafer, on the basis of a difference between a measured value as measured through the first filter and a measured value as measured through the second filter.
Abstract:
A processing apparatus includes a sealed vacuum chamber which contains a processing portion; a pressure controlling system which keeps the internal pressure of the sealed vacuum chamber constant at a predetermined level by exhausting the ambient gas in the sealed vacuum chamber; and an ambient gas recirculating system which recirculates the ambient gas exhausted from the sealed vacuum chamber back into the sealed vacuum chamber; wherein the ambient as recirculated by the ambient gas recirculating system is blown into the sealed vacuum chamber so that a gas flow is generated in a predetermined direction along the processing portion.