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    Versatile Beam Glitch Detection System
    14.
    发明申请
    Versatile Beam Glitch Detection System 有权
    多功能光束检测系统

    公开(公告)号：US20120025107A1

    公开(公告)日：2012-02-02

    申请号：US12846313

    申请日：2010-07-29

    Applicant: Shu Satoh

    Inventor： Shu Satoh

    IPC: G21K5/10

    CPC classification number: H01J37/3045 ,  H01J37/3171 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/31703

    Abstract: A glitch duration threshold is determined based on an allowable dose uniformity, a number of passes of a workpiece through an ion beam, a translation velocity, and a beam size. A beam dropout checking routine repeatedly measures beam current during implantation. A beam dropout counter is reset each time beam current is sufficient. On a first observation of beam dropout, a counter is incremented and a position of the workpiece is recorded. On each succeeding measurement, the counter is incremented if beam dropout continues, or reset if beam is sufficient. Thus, the counter indicates a length of each dropout in a unit associated with the measurement interval. The implant routine stops only when the counter exceeds the glitch duration threshold and a repair routine is performed, comprising recalculating the glitch duration threshold based on one fewer translations of the workpiece through the beam, and performing the implant routine starting at the stored position.

    Abstract translation: 毛刺持续时间阈值基于允许的剂量均匀性，通过离子束的工件的通过次数，平移速度和光束尺寸来确定。 光束离子检测程序在植入期间重复测量束电流。 每次射束电流足够时，光束压差计数器都被复位。 在第一次观察光束偏移时，计数器递增，并记录工件的位置。 在每次后续的测量中，如果光束失效继续，计数器就会增加，如果光束足够，则重置。 因此，计数器指示与测量间隔相关联的单元中的每个压差的长度。 只有当计数器超过毛刺持续时间阈值并执行修复程序时，植入程序才停止，包括基于通过束的工件的一个较少的平移重新计算毛刺持续时间阈值，以及从存储位置开始执行注入程序。

    Method for improving implant uniformity during photoresist outgassing
    15.
    发明授权
    Method for improving implant uniformity during photoresist outgassing 有权
    在光致抗蚀剂除气期间改善植入物均匀性的方法

    公开(公告)号：US08080814B2

    公开(公告)日：2011-12-20

    申请号：US12717536

    申请日：2010-03-04

    Applicant: Shu Satoh

    Inventor： Shu Satoh

    IPC: H01J37/302 ,  H01J37/02

    CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31703

    Abstract: A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.

    Abstract translation: 提供了一种方法和装置，用于改善经历沿着束线的压力增加的离子束的植入物均匀性。 该方法包括产生主扫描波形，该主扫描波形以跨过工件的基本上恒定的速度移动离子束。 还产生具有固定高度和波形的补偿波形（例如，二次波形），并与主扫描波形（例如，通过可变混频器）混合以形成波束扫描波形。 可以通过瞬时真空压力信号来调节混合比，其可以以比连续修改扫描波形更高的速度和容易性执行。 该混合物提供包括非恒定斜率的波束扫描波形，当斜波在工件上移动时改变离子束的速度。 因此，具有非恒定斜率的合成光束扫描波形能够解释沿着快速扫描方向的剂量中的压力不均匀性。

    Method for Improving Implant Uniformity During Photoresist Outgassing
    16.
    发明申请
    Method for Improving Implant Uniformity During Photoresist Outgassing 有权
    改善光刻胶除气过程中种植体均匀性的方法

    公开(公告)号：US20110215262A1

    公开(公告)日：2011-09-08

    申请号：US12717536

    申请日：2010-03-04

    Applicant: Shu Satoh

    Inventor： Shu Satoh

    IPC: H01J37/302 ,  H01J37/02

    CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31703

    Abstract: A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.

    Abstract translation: 提供了一种方法和装置，用于改善经历沿着束线的压力增加的离子束的植入物均匀性。 该方法包括产生主扫描波形，该主扫描波形以跨过工件的基本上恒定的速度移动离子束。 还产生具有固定高度和波形的补偿波形（例如，二次波形），并与主扫描波形（例如，通过可变混频器）混合以形成波束扫描波形。 可以通过瞬时真空压力信号来调节混合比，其可以以比连续修改扫描波形更高的速度和容易性执行。 该混合物提供包括非恒定斜率的波束扫描波形，当斜波在工件上移动时改变离子束的速度。 因此，具有非恒定斜率的合成光束扫描波形能够解释沿着快速扫描方向的剂量中的压力不均匀性。

    Broad beam ion implantation architecture
    17.
    发明申请
    Broad beam ion implantation architecture 有权
    宽束离子注入架构

    公开(公告)号：US20080078956A1

    公开(公告)日：2008-04-03

    申请号：US11540897

    申请日：2006-09-29

    Applicant: Shu Satoh

    Inventor： Shu Satoh

    IPC: H01J37/08

    CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/14 ,  H01J2237/049 ,  H01J2237/055 ,  H01J2237/057

    Abstract: An ion implantation system for providing a mass analyzed ribbon beam that comprises an ion beam source that includes a plasma source and an extraction component, wherein the extraction component is configured to extract a diverging ion beam and direct the ion beam to a window frame magnet assembly. The window frame magnet assembly comprises two pairs of coils orthogonally arranged within a window shaped yoke to produce an independently controllable uniform cross-field magnetic field. The first set of coils create an uniform field across the width of the diverging beam to convert it to a uniform parallel broad ion beam. The second set of coils bend the sheet of the ion beam in orthogonal direction to give mass dispersion for ion mass selection.

    Abstract translation: 一种用于提供质量分析的带状束的离子注入系统，其包括包括等离子体源和提取部件的离子束源，其中所述提取部件被配置为提取发散的离子束并将所述离子束引导到窗框磁体组件 。 窗框磁体组件包括正交布置在窗形磁轭内的两对线圈，以产生可独立控制的均匀的交叉磁场。 第一组线圈在发散光束的宽度上形成均匀的场，以将其转换成均匀的平行宽离子束。 第二组线圈在垂直方向上弯曲离子束的片材，以提供用于离子质量选择的质量分散。

    Indirectly heated button cathode for an ion source
    19.
    发明授权
    Indirectly heated button cathode for an ion source 有权
    用于离子源的间接加热按钮阴极

    公开(公告)号：US06878946B2

    公开(公告)日：2005-04-12

    申请号：US10259827

    申请日：2002-09-30

    Applicant: Marvin Farley ,  Takao Sakase ,  Shu Satoh ,  Geoffrey Ryding ,  Peter Rose ,  Christos Christou

    Inventor： Marvin Farley ,  Takao Sakase ,  Shu Satoh ,  Geoffrey Ryding ,  Peter Rose ,  Christos Christou

    IPC: H01J27/00 ,  H01J37/08

    CPC classification number: H01J37/08 ,  H01J1/20 ,  H01J1/26 ,  H01J27/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082

    Abstract: An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly P+++ for subsequent acceleration for high energy implantation.

    Abstract translation: 用于离子注入机的离子源的间接加热纽扣阴极具有由安装在轴环件中的塞片形成的纽扣件。 芯块与套环件绝热，使其能够在更高的温度下工作，从而使电子发射增强并集中在芯块的表面上。 lug lug piece piece piece。。。。。。。。。。 替代地，块塞可以是钽以提供较低的热离子功能。 在离子源中产生的浓缩等离子体有效地增强高电荷状态离子的产生，特别是用于高能量注入的后续加速的P +++。

    Ion implanter
    20.
    发明授权
    Ion implanter 有权
    离子注入机

    公开(公告)号：US06207959B1

    公开(公告)日：2001-03-27

    申请号：US09294995

    申请日：1999-04-20

    Applicant: Shu Satoh ,  Theodore H. Smick

    Inventor： Shu Satoh ,  Theodore H. Smick

    IPC: H01J3700

    CPC classification number: H01J37/3171 ,  H01J2237/20228

    Abstract: An ion implanter for sequentially processing single semiconductor wafers includes a scanning arm extending along a first axis. A wafer holder is mounted on a free end of the arm so as to be rotatable about a second axis centered on and perpendicular to the plane of the wafer. The wafer can be scanned through an ion beam by reciprocating the arm transversely of the first axis. A rotary motor is mounted in the scanning arm near the free end with its axis of rotation parallel to the first axis and perpendicular to the second axis. A right angle rotary drive connects the motor to the wafer holder. A hard stop is provided on the motor to prevent the wafer from being rotated by more than 360°. Connections to the wafer on the holder are provided by a flexible circuit coiled about the second axis. The scanning mechanism can itself be rotated about an axis parallel to the arm so as to tilt the scanning direction, the wafer holder is itself further rotatable about the arm axis relative to the scanning mechanism. This enables the wafer to be rotated to the horizontal when the mechanical scanning mechanism holds the arm with the wafer above the beam.

    Abstract translation: 用于顺序处理单个半导体晶片的离子注入机包括沿着第一轴延伸的扫描臂。 晶片保持器安装在臂的自由端上，以便围绕中心于晶片平面的第二轴可旋转。 可以通过横跨第一轴线的臂往复移动离子束来扫描晶片。 旋转马达安装在自由端附近的扫描臂中，其旋转轴线平行于第一轴线并垂直于第二轴线。 直角旋转驱动器将电机连接到晶片架。 在电机上设置了一个硬停止，以防止晶片旋转超过360°。 通过围绕第二轴线卷绕的柔性电路提供与支架上的晶片的连接。 扫描机构本身可以围绕平行于臂的轴线旋转以便使扫描方向倾斜，晶片保持器本身可相对于扫描机构围绕臂轴线进一步旋转。 这使得当机械扫描机构将晶片保持在晶片上方时，晶片能够旋转到水平线。

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