公开(公告)号：US5196954A

公开(公告)日：1993-03-23

申请号：US243218

申请日：1988-09-12

申请人： Shunpei Yamazaki ,  Takashi Inujima ,  Toshimitsu Konuma ,  Toshiji Hamatani ,  Akira Mase ,  Mitsunori Sakama ,  Minoru Miyazaki ,  Kaoru Koyanagi ,  Toshiharu Yamaguchi

发明人： Shunpei Yamazaki ,  Takashi Inujima ,  Toshimitsu Konuma ,  Toshiji Hamatani ,  Akira Mase ,  Mitsunori Sakama ,  Minoru Miyazaki ,  Kaoru Koyanagi ,  Toshiharu Yamaguchi

IPC分类号： G02F1/1333 ,  G02F1/1343 ,  G02F1/141

CPC分类号： G02F1/141 ,  G02F1/13439 ,  G02F1/133371 ,  G02F2203/30

摘要： A liquid crystal display of the chiral smectic type is caused to have grey scales, by applying a voltage of an intermediate level to the liquid crystal. Within each picture element of the display, there are a number of domains of the liquid crystal layer, some being transparent while the other being opaque rendering grey tone to the picture element.

摘要翻译： 通过向液晶施加中等水平的电压，使手性近晶型的液晶显示器具有灰度级。 在显示器的每个图像元素内，存在液晶层的多个域，一些是透明的，而另一个是对图像元素的不透明的灰色调。

公开(公告)号：US4799776A

公开(公告)日：1989-01-24

申请号：US34165

申请日：1987-03-02

申请人： Shunpei Yamazaki ,  Takashi Inujima ,  Akira Mase ,  Toshimitsu Konuma ,  Mitsunori Sakama ,  Toshiji Hamatani ,  Minoru Miyazaki ,  Kaoru Koyanagi ,  Toshiharu Yamaguchi

发明人： Shunpei Yamazaki ,  Takashi Inujima ,  Akira Mase ,  Toshimitsu Konuma ,  Mitsunori Sakama ,  Toshiji Hamatani ,  Minoru Miyazaki ,  Kaoru Koyanagi ,  Toshiharu Yamaguchi

IPC分类号： G02F1/133 ,  G02F1/1335 ,  G02F1/141 ,  G02F1/13

CPC分类号： G02F1/133553 ,  G02F1/141 ,  G02F2203/02

摘要： The liquid crystal display according to this invention comprises a liquid crystal cell having a pair of substrates with faced insides which are provided with electrodes, ferroelectric liquid crystal with a chiral smectic C phase in between said substrates and a polarizing plate on the light incidence side. One of said electrodes is a relfective electrode. The display is utilized with microcomputers, word processors, television or so on, and wherein, due to a small number of parts, the absorption loss of light is small and a reflective plate is prevented from being oxided and therefore degraded in reflection index, since it is not exposed to air.

摘要翻译： PCT No.PCT / JP86 / 00329 Sec。 371日期1987年3月2日 102（e）1987年3月2日PCT申请1986年6月27日PCT公布。 出版物WO87 / 00301 日本1987年1月15日。根据本发明的液晶显示器包括一个液晶单元，其具有一对具有面向内部的基板，其具有电极，在所述基板之间具有手性近晶C相的铁电液晶和极化 板在光入射侧。 所述电极之一是相对电极。 该显示器与微型计算机，文字处理器，电视机等一起使用，其中，由于少量的部件，光的吸收损失小，防止反射板氧化，因此反射指数降低，因为 它不会暴露在空气中。

公开(公告)号：US07491659B2

公开(公告)日：2009-02-17

申请号：US10737855

申请日：2003-12-18

申请人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C03C17/245 ,  C03C2218/1525 ,  C03C2218/153 ,  C23C16/402 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612

摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.

摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属得到改善。

公开(公告)号：US6025630A

公开(公告)日：2000-02-15

申请号：US190828

申请日：1998-11-12

申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

IPC分类号： H01L21/316 ,  H01L27/01 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L21/02131 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31629

摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.

摘要翻译： 通过使用具有乙氧基（例如TEOS）和氧作为原料的有机硅烷等离子体CVD，形成氧化硅膜以覆盖岛状非单晶硅区域，而氯化氢或含氯烃（例如三氯乙烯） 的含氟气体添加到等离子体CVD气氛中，优选为0.01〜1摩尔％的气氛，以减少形成的氧化硅膜的碱元素，提高膜的可靠性。 在形成氧化硅膜之前，可以在含有氧和氯化氢或含氯烃的等离子体气氛中处理硅区域。 在低温下得到氧化硅膜，在半导体器件中作为栅极绝缘膜具有高的可靠性。

公开(公告)号：US4959533A

公开(公告)日：1990-09-25

申请号：US259522

申请日：1988-10-18

申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Hisato Shinohara ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Takashi Inuzima

发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Hisato Shinohara ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Takashi Inuzima

IPC分类号： H01L27/146 ,  H04N1/031

CPC分类号： H04N1/0316 ,  H01L27/14623 ,  H01L27/14665 ,  H04N1/0313

摘要： An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.

公开(公告)号：US5866932A

公开(公告)日：1999-02-02

申请号：US734127

申请日：1996-10-21

申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

IPC分类号： H01L21/316 ,  H01L27/01 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L21/02131 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31629

摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.

公开(公告)号：US5837614A

公开(公告)日：1998-11-17

申请号：US781930

申请日：1997-01-07

申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

IPC分类号： H01L21/316 ,  H01L21/31

CPC分类号： H01L21/02131 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31629

摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.

公开(公告)号：US06323142B1

公开(公告)日：2001-11-27

申请号：US08706666

申请日：1996-09-06

申请人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

IPC分类号： H01L2100

CPC分类号： H01L21/02126 ,  C03C17/245 ,  C03C2218/1525 ,  C03C2218/153 ,  C23C16/402 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612

摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.

摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属得到改善。

公开(公告)号：US4936251A

公开(公告)日：1990-06-26

申请号：US725596

申请日：1985-04-22

申请人： Shunpei Yamazaki ,  Mamoru Tashiro ,  Minoru Miyazaki ,  Mitsunori Sakama ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Mamoru Tashiro ,  Minoru Miyazaki ,  Mitsunori Sakama ,  Takeshi Fukada

IPC分类号： C23C16/458 ,  C23C16/54

CPC分类号： C23C16/4587 ,  C23C16/54

摘要： A vapor phase reaction apparatus includes a reaction chamber defined by first and second walls fixed opposite each other. Third and fourth walls are introduced into the reaction chamber already having affixed to them a substrate for deposition. A reactive gas is introduced into the reaction chamber for chemical vapor deposition onto the substrate.

摘要翻译： 气相反应装置包括由彼此相对固定的第一和第二壁限定的反应室。 将第三和第四壁引入反应室中，已经固定在其上用于沉积的基底。 反应气体被引入到反应室中用于化学气相沉积到基底上。

公开(公告)号：US07465679B1

公开(公告)日：2008-12-16

申请号：US09466828

申请日：1999-12-20

申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02126 ,  H01L21/02131 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/31629

摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.

摘要翻译： 通过使用具有乙氧基（例如TEOS）和氧作为原料的有机硅烷通过等离子体CVD覆盖岛状非单晶硅区域，同时使用氯化氢或含氯烃（例如三氯乙烯） 的含氟气体添加到等离子体CVD气氛中，优选为0.01〜1摩尔％的气氛，以减少形成的氧化硅膜的碱元素，提高膜的可靠性。 在形成氧化硅膜之前，可以在含有氧和氯化氢或含氯烃的等离子体气氛中处理硅区域。 在低温下得到氧化硅膜，在半导体器件中作为栅极绝缘膜具有高的可靠性。