公开(公告)号：US20140361844A1

公开(公告)日：2014-12-11

申请号：US14029931

申请日：2013-09-18

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  Daniel N. Koury, JR.

IPC: H03B5/30 ,  H03L1/02

CPC classification number: H02N1/00 ,  B81B3/0081 ,  H03B5/30 ,  H03H3/013 ,  H03H9/02259 ,  H03H2007/006 ,  H03H2009/02291 ,  H03H2009/02385 ,  H03H2009/0248 ,  H03H2009/2442 ,  H03L1/02 ,  H03L1/04 ,  Y10T29/49005 ,  Y10T29/49117

Abstract: A technique decouples a MEMS device from sources of strain by forming a MEMS structure with suspended electrodes that are mechanically anchored in a manner that reduces or eliminates transfer of strain from the substrate into the structure, or transfers strain to electrodes and body so that a transducer is strain-tolerant. The technique includes using an electrically insulating material embedded in a conductive structural material for mechanical coupling and electrical isolation. An apparatus includes a MEMS device including a first electrode and a second electrode, and a body suspended from a substrate of the MEMS device. The body and the first electrode form a first electrostatic transducer. The body and the second electrode form a second electrostatic transducer. The apparatus includes a suspended passive element mechanically coupled to the body and electrically isolated from the body.

Abstract translation: 一种技术通过形成具有悬挂电极的MEMS结构来将MEMS器件与应变源解耦，所述悬置电极机械地锚定以减少或消除应变从衬底转移到结构中的方式，或将应变传递到电极和体，使得换能器 是耐应变的。 该技术包括使用嵌入导电结构材料中的电绝缘材料进行机械耦合和电隔离。 一种装置包括包括第一电极和第二电极以及从MEMS器件的衬底悬挂的主体的MEMS器件。 主体和第一电极形成第一静电换能器。 主体和第二电极形成第二静电换能器。 该装置包括机械耦合到主体并与主体电隔离的悬置的被动元件。

公开(公告)号：US20140151820A1

公开(公告)日：2014-06-05

申请号：US13690112

申请日：2012-11-30

Applicant: SILICON LABORATORIES INC.

Inventor： Roger T. Howe ,  Emmanuel P. Quevy ,  Zhen Gu

IPC: H01L23/31 ,  H01L21/56

CPC classification number: H01L23/3171 ,  B81B7/0038 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity. The barrier may be substantially impermeable to gas migration from the integrated circuit.

Abstract translation: 用于形成封装的微机电系统（MEMS）器件的技术包括使用衬底形成集成电路，使用衬底形成阻挡层，以及使用衬底形成MEMS器件。 该方法包括将MEMS器件封装在空腔中。 屏障设置在集成电路和空腔之间，并且阻止集成电路脱气进入空腔。 阻挡层可能基本上不可渗透从集成电路的气体迁移。

公开(公告)号：US09602026B2

公开(公告)日：2017-03-21

申请号：US14029927

申请日：2013-09-18

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  Daniel N. Koury, Jr.

IPC: H02N1/00 ,  H03B5/30 ,  H03L1/02 ,  H03H3/013 ,  H03H9/02 ,  B81B3/00 ,  H03L1/04 ,  H03H7/00 ,  H03H9/24

CPC classification number: H02N1/00 ,  B81B3/0081 ,  H03B5/30 ,  H03H3/013 ,  H03H9/02259 ,  H03H2007/006 ,  H03H2009/02291 ,  H03H2009/02385 ,  H03H2009/0248 ,  H03H2009/2442 ,  H03L1/02 ,  H03L1/04 ,  Y10T29/49005 ,  Y10T29/49117

Abstract: A microelectromechanical system (MEMS) device includes a temperature compensating structure including a first beam suspended from a substrate and a second beam suspended from the substrate. The first beam is formed from a first material having a first Young's modulus temperature coefficient. The second beam is formed from a second material having a second Young's modulus temperature coefficient. The body may include a routing spring suspended from the substrate. The routing spring may be coupled to the first beam and the second beam. The routing spring may be formed from the second material. The first beam and the second beam may have lower spring compliance than the routing spring. The MEMS device may be a resonator and the temperature compensating structure may have dimensions and a location such that the temperature compensation structure modifies a temperature coefficient of frequency of the resonator independent of a mode shape of the resonator.

公开(公告)号：US20150266724A1

公开(公告)日：2015-09-24

申请号：US13901258

申请日：2013-05-23

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  David H. Bernstein

IPC: B81C1/00

CPC classification number: B81C1/0069 ,  B81C1/00349 ,  B81C1/00523 ,  G02B6/358 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/2457 ,  H03H2009/02496 ,  H03H2009/2442 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49165

Abstract: MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.

Abstract translation: 包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。 第一种材料具有与第二种材料不同的杨氏模量温度系数。 在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。 在一个这样的实施例中，第一材料是半导体，第二材料是电介质。 在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。 在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。 在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。

公开(公告)号：US09018715B2

公开(公告)日：2015-04-28

申请号：US13690112

申请日：2012-11-30

Applicant: Silicon Laboratories Inc.

Inventor： Roger T. Howe ,  Emmanuel P. Quevy ,  Zhen Gu

IPC: H01L23/31 ,  B81B7/00

CPC classification number: H01L23/3171 ,  B81B7/0038 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity. The barrier may be substantially impermeable to gas migration from the integrated circuit.

Abstract translation: 用于形成封装的微机电系统（MEMS）器件的技术包括使用衬底形成集成电路，使用衬底形成阻挡层，以及使用衬底形成MEMS器件。 该方法包括将MEMS器件封装在空腔中。 屏障设置在集成电路和空腔之间，并且阻止集成电路脱气进入空腔。 阻挡层可能基本上不可渗透从集成电路的气体迁移。

公开(公告)号：US09007119B2

公开(公告)日：2015-04-14

申请号：US14137499

申请日：2013-12-20

Applicant: Silicon Laboratories Inc.

Inventor： Aaron J. Caffee ,  Brian G. Drost ,  Emmanuel P. Quevy

IPC: H01L41/00 ,  H02N1/00 ,  B81B7/00

CPC classification number: H02N1/006 ,  B81B7/0045 ,  B81B7/008 ,  B81B2203/0118 ,  B81B2207/015 ,  B81B2207/03 ,  G01L25/00 ,  G01P15/097 ,  G01P15/125 ,  G01P2015/0831 ,  H03B5/30 ,  H03H9/02275 ,  H03H2009/0248 ,  H03H2009/02519 ,  H03L1/022 ,  H03L7/1976

Abstract: A method of operating a system including a MEMS device of an integrated circuit die includes generating an indicator of a device parameter of the MEMS device in a first mode of operating the system using a monitor structure formed using a MEMS structural layer of the integrated circuit die. The method includes generating, using a CMOS device of the integrated circuit die, a signal indicative of the device parameter and based on the indicator. The device parameter may be a geometric dimension of the MEMS device. The method may include, in a second mode of operating the system, compensating for a difference between a value of the signal and a target value of the signal. The method may include re-generating the indicator after exposing the MEMS device to stress and generating a second signal indicating a change in the device parameter.

Abstract translation: 一种操作包括集成电路管芯的MEMS器件的系统的方法包括：在使用由集成电路管芯的MEMS结构层形成的监视器结构的第一模式中，生成MEMS器件的器件参数的指示器 。 该方法包括使用集成电路管芯的CMOS器件产生指示器件参数并基于指示器的信号。 器件参数可以是MEMS器件的几何尺寸。 该方法可以包括在操作系统的第二模式中，补偿信号的值和信号的目标值之间的差异。 该方法可以包括在使MEMS器件暴露于应力之后重新产生指示符，并产生指示器件参数变化的第二信号。

公开(公告)号：US20140361661A1

公开(公告)日：2014-12-11

申请号：US14029927

申请日：2013-09-18

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  Daniel N. Koury, JR.

IPC: H02N1/00

CPC classification number: H02N1/00 ,  B81B3/0081 ,  H03B5/30 ,  H03H3/013 ,  H03H9/02259 ,  H03H2007/006 ,  H03H2009/02291 ,  H03H2009/02385 ,  H03H2009/0248 ,  H03H2009/2442 ,  H03L1/02 ,  H03L1/04 ,  Y10T29/49005 ,  Y10T29/49117

Abstract: A microelectromechanical system (MEMS) device includes a temperature compensating structure including a first beam suspended from a substrate and a second beam suspended from the substrate. The first beam is formed from a first material having a first Young's modulus temperature coefficient. The second beam is formed from a second material having a second Young's modulus temperature coefficient. The body may include a routing spring suspended from the substrate. The routing spring may be coupled to the first beam and the second beam. The routing spring may be formed from the second material. The first beam and the second beam may have lower spring compliance than the routing spring. The MEMS device may be a resonator and the temperature compensating structure may have dimensions and a location such that the temperature compensation structure modifies a temperature coefficient of frequency of the resonator independent of a mode shape of the resonator.

Abstract translation: 微机电系统（MEMS）装置包括温度补偿结构，其包括从衬底悬挂的第一光束和从衬底悬挂的第二光束。 第一梁由具有第一杨氏模量温度系数的第一材料形成。 第二梁由具有第二杨氏模量温度系数的第二材料形成。 主体可以包括从基板悬挂的布线弹簧。 路由弹簧可以耦合到第一波束和第二波束。 路由弹簧可以由第二材料形成。 第一光束和第二光束可能具有比布线弹簧更低的弹性柔顺度。 MEMS器件可以是谐振器，并且温度补偿结构可以具有尺寸和位置，使得温度补偿结构独立于谐振器的模式形状来修改谐振器的频率的温度系数。

公开(公告)号：US20140306623A1

公开(公告)日：2014-10-16

申请号：US14137499

申请日：2013-12-20

Applicant: Silicon Laboratories Inc.

Inventor： Aaron J. Caffee ,  Brian G. Drost ,  Emmanuel P. Quevy

IPC: H02N1/00

CPC classification number: H02N1/006 ,  B81B7/0045 ,  B81B7/008 ,  B81B2203/0118 ,  B81B2207/015 ,  B81B2207/03 ,  G01L25/00 ,  G01P15/097 ,  G01P15/125 ,  G01P2015/0831 ,  H03B5/30 ,  H03H9/02275 ,  H03H2009/0248 ,  H03H2009/02519 ,  H03L1/022 ,  H03L7/1976

Abstract: A method of operating a system including a MEMS device of an integrated circuit die includes generating an indicator of a device parameter of the MEMS device in a first mode of operating the system using a monitor structure formed using a MEMS structural layer of the integrated circuit die. The method includes generating, using a CMOS device of the integrated circuit die, a signal indicative of the device parameter and based on the indicator. The device parameter may be a geometric dimension of the MEMS device. The method may include, in a second mode of operating the system, compensating for a difference between a value of the signal and a target value of the signal. The method may include re-generating the indicator after exposing the MEMS device to stress and generating a second signal indicating a change in the device parameter.

Abstract translation: 一种操作包括集成电路管芯的MEMS器件的系统的方法包括：在使用由集成电路管芯的MEMS结构层形成的监视器结构的第一模式中，生成MEMS器件的器件参数的指示器 。 该方法包括使用集成电路管芯的CMOS器件产生指示器件参数并基于指示器的信号。 器件参数可以是MEMS器件的几何尺寸。 该方法可以包括在操作系统的第二模式中，补偿信号的值和信号的目标值之间的差异。 该方法可以包括在使MEMS器件暴露于应力之后重新产生指示符，并产生指示器件参数变化的第二信号。

公开(公告)号：US20140253219A1

公开(公告)日：2014-09-11

申请号：US13786686

申请日：2013-03-06

Applicant: SILICON LABORATORIES INC.

Inventor： Aaron Caffee ,  Emmanuel P. Quevy

IPC: B81B7/00

CPC classification number: H02N1/006 ,  B81B7/0045 ,  B81B7/008 ,  B81B2203/0118 ,  B81B2207/015 ,  B81B2207/03 ,  G01L25/00 ,  G01P15/097 ,  G01P15/125 ,  G01P2015/0831 ,  H03B5/30 ,  H03H9/02275 ,  H03H2009/0248 ,  H03H2009/02519 ,  H03L1/022 ,  H03L7/1976

Abstract: A method for compensating for strain on a MEMS device includes generating a signal indicative of a strain on the MEMS device in a first mode of operating a system including the MEMS device. The method includes compensating for the strain in a second mode of operating the system based on the signal. Generating the signal may include comparing an indicator of a resonant frequency of the MEMS device to a predetermined resonant frequency of the MEMS device. Generating the signal may include comparing a first output of a strain-sensitive device to a second output of a strain-insensitive device and generating an indicator thereof. Generating the signal may include sensing a first capacitive transduction of strain-sensitive electrodes of the MEMS device in the first mode and generating the signal based thereon. The strain-sensitive electrodes of the MEMS device may be disabled in the second mode.

Abstract translation: 用于补偿MEMS器件上的应变的方法包括在以包括MEMS器件的系统操作的第一模式中产生指示MEMS器件上的应变的信号。 该方法包括基于该信号补偿在操作系统的第二模式中的应变。 生成信号可以包括将MEMS器件的谐振频率的指示符与MEMS器件的预定谐振频率进行比较。 生成信号可以包括将应变敏感器件的第一输出与应变不敏感器件的第二输出进行比较并产生其指示符。 生成信号可以包括在第一模式中感测MEMS器件的应变敏感电极的第一电容转换并且基于其产生信号。 可以在第二模式中禁用MEMS器件的应变敏感电极。