公开(公告)号：US20230230868A1

公开(公告)日：2023-07-20

申请号：US18001033

申请日：2021-04-26

Applicant: Soitec

Inventor： Hugo Biard ,  Gweltaz Gaudin ,  Séverin Rouchier ,  Didier Landru

IPC: H01L21/683 ,  H01L21/324 ,  H01L21/322 ,  H01L21/18

CPC classification number: H01L21/6835 ,  H01L21/324 ,  H01L21/3221 ,  H01L21/187 ,  H01L2221/68381 ,  H01L2221/68368

Abstract: A temporary substrate, which is detachable at a detachment temperature higher than 1000° C. comprises:



a semiconductor working layer extending along a main plane,
a carrier substrate,
an intermediate layer having a thickness less than 20 nm arranged between the working layer and the carrier substrate,
a bonding interface located in or adjacent the intermediate layer,
gaseous atomic species distributed according to a concentration profile along the axis normal to the main plane, the atoms remaining trapped in the intermediate layer and/or in an adjacent layer of the carrier substrate with a thickness less than or equal to 10 nm and/or in an adjacent sublayer of the working layer with a thickness less than or equal to 10 nm when the temporary substrate is subjected to a temperature lower than the detachment temperature.

公开(公告)号：US20250063784A1

公开(公告)日：2025-02-20

申请号：US18718313

申请日：2022-12-13

Applicant: Soitec

Inventor： Hugo Biard ,  Eric Guiot

IPC: H01L29/16 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor structure, which includes a support substrate of polycrystalline silicon carbide and an active layer of single-crystal silicon carbide, involves: the formation of a support substrate including a stack of a first layer of polycrystalline SiC mainly of polytype 3C and of a second layer of polycrystalline SiC mainly of polytype 4H and/or 6H, the bonding of a donor substrate including an active layer of single-crystal SiC of polytype 4H or 6H to a face of polytype 4H and/or 6H of the support substrate, and the transfer of the active layer onto the support substrate.

公开(公告)号：US12198983B2

公开(公告)日：2025-01-14

申请号：US17756615

申请日：2020-10-26

Applicant: Soitec

Inventor： Ionut Radu ,  Hugo Biard ,  Christophe Maleville ,  Eric Guiot ,  Didier Landru

IPC: H01L21/78 ,  C23C16/32 ,  C30B25/20 ,  C30B29/36 ,  C30B31/22 ,  C30B33/10 ,  H01L21/02

Abstract: A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

公开(公告)号：US20240395603A1

公开(公告)日：2024-11-28

申请号：US18694369

申请日：2022-09-20

Applicant: Soitec

Inventor： Gweltaz Gaudin ,  Christophe Maleville ,  Sidoine Odoul ,  Ionut Radu ,  Hugo Biard

IPC: H01L21/763 ,  H01L21/762 ,  H01L29/16

Abstract: A method for manufacturing a composite structure having a layer of monocrystalline silicon carbide on a polycrystalline silicon carbide carrier substrate includes: providing an initial substrate of polycrystalline silicon carbide, having a front face and comprising grains, the average size of which is greater than 0.5 μm; forming a polycrystalline silicon carbide surface layer on the initial substrate to form the carrier substrate, the surface layer including grains having an average size of less than 500 nm and having a thickness of between 50 nm and 50 μm; preparing a free surface of the surface layer of the carrier substrate to obtain a roughness of less than 1 nm RMS; (d) a step of transferring the useful layer onto the carrier substrate, by applying molecular bonding, the surface layer located between the useful layer and the initial substrate. A carrier substrate and a composite structure are formed by the method.

公开(公告)号：US20240392476A1

公开(公告)日：2024-11-28

申请号：US18694796

申请日：2022-10-03

Applicant: Soitec

Inventor： Ionut Radu ,  Hugo Biard ,  Gweltaz Gaudin

IPC: C30B33/06 ,  C30B28/14 ,  C30B29/36 ,  C30B33/02

Abstract: A method of fabricating a composite structure including a thin layer of single-crystal silicon carbide on a polycrystalline SiC carrier substrate includes: forming a polycrystalline SiC layer on a donor substrate, at least a surface portion of which is made of single-crystal SiC; before or after forming the polycrystalline SiC layer, implanting ionic species into the surface portion of the donor substrate, so as to form a plane of weakness delimiting a thin single-crystal SiC layer to be transferred; after the implanting of the ionic species and the forming of the polycrystalline SiC layer, bonding the donor substrate and the polycrystalline SiC carrier substrate, the polycrystalline SiC layer being at the bonding interface; and detaching the donor substrate along the plane of weakness, so as to transfer the polycrystalline SiC layer and the thin single-crystal SiC layer onto the polycrystalline SiC carrier substrate.

公开(公告)号：US20230197435A1

公开(公告)日：2023-06-22

申请号：US17907517

申请日：2021-01-12

Applicant: Soitec

Inventor： Hugo Biard

IPC: H01L21/02 ,  C30B1/02 ,  C30B29/36 ,  C23C14/48 ,  C30B25/18 ,  C30B33/10 ,  C23C16/32 ,  C23C16/01

CPC classification number: H01L21/02002 ,  H01L21/02079 ,  C30B1/023 ,  C30B29/36 ,  C23C14/48 ,  C30B25/18 ,  C30B33/10 ,  C23C16/325 ,  C23C16/01

Abstract: A method for manufacturing a composite structure comprising a thin layer made of monocrystalline silicon carbide arranged on a carrier substrate made of silicon carbide, the method comprising: a) a step of providing a donor substrate made of monocrystalline silicon carbide, b) a step of ion implantation of light species into the donor substrate, to form a buried brittle plane delimiting the thin layer between the buried brittle plane and a free surface of the donor substrate, c) a succession of n steps of forming crystalline carrier layers, with n greater than or equal to 2; the n crystalline carrier layers being positioned on the front face of the donor substrate successively one on the other, and forming the carrier substrate; each formation step comprising: direct liquid injection chemical vapor deposition, at a temperature below 900° C., to form a carrier layer, the carrier layer being formed by an at least partially amorphous SiC matrix, and having a thickness of less than or equal to 200 microns; a crystallization heat treatment of the carrier layer, at a temperature of less than or equal to 1000° C., to form a crystalline carrier layer; d) a step of separation along the buried brittle plane, to form, on the one hand, a composite structure comprising the thin layer on the carrier substrate and, on the other hand, the rest of the donor substrate.

公开(公告)号：US20220415653A1

公开(公告)日：2022-12-29

申请号：US17756609

申请日：2020-10-26

Applicant: Soitec

Inventor： Hugo Biard

IPC: H01L21/02 ,  H01L21/306 ,  C30B29/36 ,  C30B25/20 ,  C23C14/48 ,  C23C16/448 ,  C23C16/32 ,  C23C16/56 ,  C23C16/01

Abstract: A process for manufacturing a composite structure comprises: a) providing an initial substrate made of monocrystalline silicon carbide, b) epitaxially growing a monocrystalline silicon carbide donor layer on the initial substrate to form a donor substrate 111, c) implanting ions into the donor layer to form a buried brittle plane defining the the donor layer, d) depositing, using liquid injection-chemical vapor deposition at a temperature below 1000° C., a carrier layer on the donor layer, the carrier layer comprising an at least partially amorphous SiC matrix, e) separating the donor substrate along the brittle plane to form an intermediate composite structure comprising the donor layer on the carrier layer f) heat treating the intermediate composite structure at a temperature of between 1000° C. and 1800° C. to crystallize the carrier layer and form the polycrystalline carrier substrate, and g) applying mechanical and/or chemical treatment(s) of the composite structure.