中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

159 records (took 0.031 seconds)

    Magnetic memory device and element
    11.
    发明授权
    Magnetic memory device and element 有权

    公开(公告)号：US09735343B2

    公开(公告)日：2017-08-15

    申请号：US14590339

    申请日：2015-01-06

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.

    Memory apparatus and memory device
    15.
    发明授权
    Memory apparatus and memory device 有权
    存储设备和存储设备

    公开(公告)号：US09424903B2

    公开(公告)日：2016-08-23

    申请号：US14399268

    申请日：2013-03-06

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: G11C5/08 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22

    CPC classification number: H04W72/048 ,  G11C5/08 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1697 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H04W72/085 ,  H04W72/121

    Abstract: To provide a memory apparatus capable of operating at high speed with less current and inhibiting a decrease in an amplitude of a readout signal.A memory apparatus includes a memory device at least including a memory layer, a magnetic fixed layer, and an intermediate layer made of a non-magnetic body disposed between the memory layer and the magnetic fixed layer; current being capable of flowing in a lamination direction; a wiring for supplying current flowing to the lamination direction; and a memory control unit for storing information by flowing standby current at a predetermined level to the memory device via the wiring to incline the magnetization direction of the memory layer from the direction perpendicular to a film surface and flowing recording current that is higher than the standby current via the wiring to change the magnetization direction of the memory layer.

    Abstract translation: 提供能够以较低电流高速运行并且抑制读出信号的振幅降低的存储装置。 存储装置包括存储器件，其至少包括存储层，磁性固定层和由设置在存储层和磁性固定层之间的非磁性体制成的中间层; 电流能够沿层叠方向流动; 用于提供流向层叠方向的电流的布线; 存储器控制单元，用于通过经由布线将预定电平的待机电流从存储器层的磁化方向从垂直于膜表面的方向倾斜并且高于待机的流动记录电流来存储信息 电流通过布线改变存储层的磁化方向。

    STORAGE ELEMENT AND STORAGE DEVICE
    17.
    发明申请
    STORAGE ELEMENT AND STORAGE DEVICE 有权
    存储元件和存储设备

    公开(公告)号：US20160172583A1

    公开(公告)日：2016-06-16

    申请号：US15049418

    申请日：2016-02-22

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    IPC: H01L43/02 ,  H01L43/10

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

    Abstract: Provided is an information storage element comprising a first layer, an insulation layer coupled to the first layer, and a second layer coupled to the insulation layer opposite the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material. The insulation layer includes a non-magnetic material. The second layer includes a fixed magnetization. In an embodiment, the first layer has a transverse length that is approximately 45 nm or less and a volume that is approximately 2,390 nm3 or less. In a further embodiment, the second layer includes MgO and is capable of allowing electrons passing through the second layer reach the first layer before the electrons enter a non-polarized state.

    Abstract translation: 提供了一种信息存储元件，包括第一层，耦合到第一层的绝缘层和耦合到与第一层相对的绝缘层的第二层。 第一层能够根据磁性材料的磁化状态存储信息。 绝缘层包括非磁性材料。 第二层包括固定磁化。 在一个实施方案中，第一层具有约45nm或更小的横向长度和约2390nm 3或更小的体积。 在另一实施例中，第二层包括MgO，并且能够使电子通过第二层的电子在电子进入非极化状态之前到达第一层。

    Magnetic memory element and memory apparatus having multiple magnetization directions
    18.
    发明授权
    Magnetic memory element and memory apparatus having multiple magnetization directions 有权
    具有多个磁化方向的磁存储元件和存储装置

    公开(公告)号：US09331270B2

    公开(公告)日：2016-05-03

    申请号：US14330748

    申请日：2014-07-14

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: H01L29/82 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

    Abstract: A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.

    Abstract translation: 存储元件包括分层结构：具有根据信息改变的磁化方向的存储层，通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储层中，该信息包括第一铁磁 层，其具有从垂直于膜面的方向倾斜的磁化方向，层压在所述第一铁磁层上的接合层和层压在所述接合层上并通过所述接合层接合到所述第一铁磁性层的第二铁磁层， 从垂直于膜面的方向倾斜的磁化方向，具有固定的磁化方向的磁化固定层，设置在存储层和磁化固定层之间的中间层，并与第一铁磁体 层和与第二铁磁体接触的盖层 c层。

    Storage element and storage device
    19.
    发明授权
    Storage element and storage device 有权
    存储元件和存储设备

    公开(公告)号：US09324935B2

    公开(公告)日：2016-04-26

    申请号：US14334277

    申请日：2014-07-17

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    IPC: G11C11/14 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01F10/32 ,  H01L27/22

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

    Abstract: Provided is an information storage element comprising a first layer, an insulation layer coupled to the first layer, and a second layer coupled to the insulation layer opposite the first layer. The first layer has a transverse length that is approximately 45 nm or less, or an area that is approximately 1,600 nm2 or less, so as to be capable of storing information according to a magnetization state of a magnetic material. The magnetization state is configured to be changed by a current. The insulation layer includes a non-magnetic material. The second layer includes a fixed magnetization so as to be capable of serving as a reference of the first layer.

    Abstract translation: 提供了一种信息存储元件，包括第一层，耦合到第一层的绝缘层和耦合到与第一层相对的绝缘层的第二层。 第一层具有大约45nm或更小的横向长度或大约1,600nm2或更小的面积，以便能够根据磁性材料的磁化状态存储信息。 磁化状态被配置为由电流改变。 绝缘层包括非磁性材料。 第二层包括固定的磁化强度，以便能够作为第一层的参考。

    Memory device and access method
    20.
    发明授权
    Memory device and access method 有权
    内存设备和访问方式

    公开(公告)号：US09324424B2

    公开(公告)日：2016-04-26

    申请号：US14497978

    申请日：2014-09-26

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: G11C11/02 ,  G11C13/00 ,  G11C11/16

    CPC classification number: G11C13/003 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0002 ,  G11C13/0069 ,  G11C2213/74 ,  G11C2213/79

    Abstract: A memory device includes multiple bit lines extending in a first direction, multiple word lines extending in a second direction crossing the first direction, and multiple memory cells each coupled to corresponding two word lines and corresponding two bit lines. Each memory cell includes a memory element configured to store information on the basis of changes in resistance and two select transistors. One terminal of the memory element is coupled to one of the two bit lines corresponding to the memory cell; the other terminal is coupled to respective drains of the select transistors; respective sources of the select transistors are coupled to the other bit line; a gate of one of the select transistors is coupled to one of the two word lines corresponding to the memory cell; and a gate of the other is coupled to the other word line.

    Abstract translation: 存储器件包括在第一方向上延伸的多个位线，在与第一方向相交的第二方向上延伸的多个字线，以及分别耦合到对应的两个字线和对应的两个位线的多个存储器单元。 每个存储单元包括被配置为基于电阻变化存储信息的存储元件和两个选择晶体管。 存储元件的一个端子耦合到对应于存储器单元的两个位线之一; 另一个端子耦合到选择晶体管的相应的漏极; 选择晶体管的各个源耦合到另一位线; 选择晶体管之一的栅极耦合到对应于存储单元的两条字线之一; 并且另一个的门耦合到另一个字线。

Patent Agency Ranking