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公开(公告)号：US20100255655A1
公开(公告)日：2010-10-07
申请号：US12817840
申请日：2010-06-17
IPC分类号： H01L21/762
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31608
摘要： Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may further include depositing additional silicon oxide over the cured silicon oxide to fill the trench. The methods may also include removing the acidic vapor from the semiconductor processing chamber.
摘要翻译： 提供了在基板上固化氧化硅层的方法。 所述方法可以包括提供半导体处理室和衬底并形成填充衬底上的沟槽的一部分的氧化硅层的过程，所述氧化硅层包括作为形成副产物的碳物质。 所述方法还包括将酸性蒸汽引入半导体处理室，酸性蒸气与氧化硅层反应以从氧化硅层除去碳物质。 所述方法还可以包括在固化的氧化硅上沉积额外的氧化硅以填充沟槽。 所述方法还可以包括从半导体处理室去除酸性蒸汽。
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公开(公告)号：US07825044B2
公开(公告)日：2010-11-02
申请号：US12817840
申请日：2010-06-17
IPC分类号： H01L21/31 , H01L21/489
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31608
摘要： Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may further include depositing additional silicon oxide over the cured silicon oxide to fill the trench. The methods may also include removing the acidic vapor from the semiconductor processing chamber.
摘要翻译： 提供了在基板上固化氧化硅层的方法。 所述方法可以包括提供半导体处理室和衬底并形成填充衬底上的沟槽的一部分的氧化硅层的过程，所述氧化硅层包括作为形成副产物的碳物质。 所述方法还包括将酸性蒸汽引入半导体处理室，酸性蒸气与氧化硅层反应以从氧化硅层除去碳物质。 所述方法还可以包括在固化的氧化硅上沉积额外的氧化硅以填充沟槽。 所述方法还可以包括从半导体处理室去除酸性蒸汽。
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13.发明授权High quality silicon oxide films by remote plasma CVD from disilane precursors 有权通过远离等离子体CVD从乙硅烷前体获得高质量的氧化硅膜公开(公告)号：US08242031B2
公开(公告)日：2012-08-14
申请号：US12891426
申请日：2010-09-27
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56
摘要： A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.
摘要翻译： 一种在衬底上沉积含硅和氮的膜的方法。 该方法包括将含硅前体引入到包含基底的沉积室中，其中含硅前体包含至少两个硅原子。 该方法还包括用位于沉积室外部的远程等离子体系统产生至少一种自由基氮前体。 此外，该方法包括将自由基氮前体引入沉积室，其中自由基含氮和含硅前体将含硅和氮的膜反应并沉积在基底上。 此外，该方法包括在蒸汽环境中退火含硅和氮的膜以形成氧化硅膜，其中蒸汽环境包括水和酸性蒸汽。
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14.发明申请HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS 有权通过远程等离子体CVD从高性能前驱体制造的高品质硅氧烷膜公开(公告)号：US20090104755A1
公开(公告)日：2009-04-23
申请号：US11876538
申请日：2007-10-22
IPC分类号： H01L21/02
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56
摘要： A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.
摘要翻译： 一种在衬底上沉积含硅和氮的膜的方法。 该方法包括将含硅前体引入到包含基底的沉积室中，其中含硅前体包含至少两个硅原子。 该方法还包括用位于沉积室外部的远程等离子体系统产生至少一种自由基氮前体。 此外，该方法包括将自由基氮前体引入沉积室，其中自由基含氮和含硅前体将含硅和氮的膜反应并沉积在基底上。 此外，该方法包括在蒸汽环境中退火含硅和氮的膜以形成氧化硅膜，其中蒸汽环境包括水和酸性蒸汽。
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公开(公告)号：US08765573B2
公开(公告)日：2014-07-01
申请号：US13229673
申请日：2011-09-10
申请人： Abhijit Basu Mallick , Nitin Ingle
发明人： Abhijit Basu Mallick , Nitin Ingle
IPC分类号： H01L21/00 , H01L21/768 , H01L21/02 , H01L21/764
CPC分类号： H01L21/764 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/7682 , H01L21/76837 , H01L2221/1047
摘要： A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features.
摘要翻译： 在衬底上的相邻凸起特征之间形成气隙的方法包括使用可流动沉积工艺在相邻凸起特征之间的底部区域中形成含碳材料。 该方法还包括使用可流动的沉积工艺在含碳材料上形成含硅膜，其中含硅膜填充相邻凸起特征之间的上部区域并在相邻的凸起特征上延伸。 该方法还包括在升高的温度下将含碳材料和含硅材料固化一段时间，以形成相邻凸起特征之间的气隙。
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16.发明申请公开(公告)号：US20130217240A1
公开(公告)日：2013-08-22
申请号：US13590611
申请日：2012-08-21
IPC分类号： H01L21/02
CPC分类号： H01L21/02274 , C23C16/36 , H01L21/02167 , H01L21/02211 , H01L21/0234 , H01L21/31111
摘要： Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.
摘要翻译： 描述了在半导体衬底上形成电介质层的方法。 所述方法可以包括向化学气相沉积室提供含硅前体和通电的含氮前体。 含硅前体和带电的含氮前体可以在化学气相沉积室中反应，以在基底上沉积可流动的硅 - 碳 - 氮材料。 所述方法还可以包括处理可流动的硅 - 碳 - 氮材料以在半导体衬底上形成电介质层。
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17.发明申请WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS 审中-公开在可流动CVD过程中形成的介电材料上进行的湿氧化过程公开(公告)号：US20110151677A1
公开(公告)日：2011-06-23
申请号：US12643196
申请日：2009-12-21
IPC分类号： H01L21/316
CPC分类号： H01L21/02326 , H01L21/02343
摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
摘要翻译： 提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。 在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理 并在衬底上形成氧化介电材料。
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18.发明授权Wet oxidation process performed on a dielectric material formed from a flowable CVD process 有权在由可流动CVD工艺形成的电介质材料上进行湿氧化处理公开(公告)号：US09390914B2
公开(公告)日：2016-07-12
申请号：US13396410
申请日：2012-02-14
IPC分类号： H01L21/02
CPC分类号： H01L21/02326 , H01L21/02343
摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
摘要翻译： 提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。 在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理 并在衬底上形成氧化介电材料。
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公开(公告)号：US08580699B2
公开(公告)日：2013-11-12
申请号：US13197517
申请日：2011-08-03
申请人： Abhijit Basu Mallick
发明人： Abhijit Basu Mallick
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/401 , C23C16/45534 , C23C16/56 , H01L21/02216 , H01L21/0228 , H01L21/0234
摘要： Catalyzed atomic layer deposition from a reduced number of precursors is described. A deposition precursor contains silicon, oxygen and a catalytic ligand. A hydroxyl-terminated substrate is exposed to the deposition precursor to form a silicon bridge bond between two surface-bound oxygens. The surface-bound oxygens were part of two surface-bound hydroxyl groups and the adsorption of the deposition precursor liberates the hydrogens. The silicon atom is also chemically-bound to one or two additional oxygen atoms which were already chemically-bound to the silicon within a same deposition precursor molecule. At least one of the additional oxygen atoms is further chemically-bound to the catalytic ligand either directly or by way of a hydrocarbon chain. Further exposure of the substrate to moisture (H2O) results in displacement of the additional oxygen which are replaced by hydroxyl groups from the moisture. The surface is again hydroxyl-terminated and the process may be repeated. The catalytic nature of the reaction enables the deposition to occur at low substrate temperatures. The chemically-embedded nature of the catalyst increases the deposition per cycle thereby reducing the number of precursor exposures to grow a film of the same thickness.
摘要翻译： 描述了从减少数量的前体催化的原子层沉积。 沉积前体含有硅，氧和催化配体。 将羟基封端的衬底暴露于沉积前体以在两个表面结合的氧之间形成硅桥键。 表面结合的氧是两个表面结合的羟基的一部分，并且沉积前体的吸附释放出氢。 硅原子也与一个或两个另外的氧原子化学键合，这些氧原子已经在相同的沉积前体分子内与硅化学结合。 至少一个额外的氧原子进一步与催化配体直接或通过烃链进行化学键合。 底物进一步暴露于水分（H2O）会导致另外的氧被水分置换成羟基。 表面再次被羟基封端，并且可以重复该过程。 反应的催化性能使沉积在低的底物温度下发生。 催化剂的化学嵌入性质增加每个循环的沉积，从而减少前体曝光的数量以生长相同厚度的膜。
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公开(公告)号：US20130217243A1
公开(公告)日：2013-08-22
申请号：US13590761
申请日：2012-08-21
IPC分类号： H01L21/02
CPC分类号： H01L21/02356 , H01L21/02167 , H01L21/02211 , H01L21/02222 , H01L21/02274 , H01L21/02321 , H01L21/0234 , H01L21/31111 , H01L21/31155
摘要： Methods are described for forming and treating a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is ion implanted to increase etch tolerance, prevent shrinkage, adjust film tension and/or adjust electrical characteristics. Ion implantation may also remove components which enabled the flowability, but are no longer needed after deposition. Some treatments using ion implantation have been found to decrease the evolution of properties of the film upon exposure to atmosphere.
摘要翻译： 描述了用于在半导体衬底上形成和处理可流动的含硅 - 碳和氮的层的方法。 硅和碳组分可以来自含硅和碳的前体，而氮可以来自已经被活化以加速氮与含硅和碳的前体的反应的含氮前体 较低的沉积温度。 初始可流动的含硅碳和氮的层被离子注入以增加蚀刻耐受性，防止收缩，调节膜张力和/或调节电特性。 离子注入还可以去除能够流动的组分，但是在沉积后不再需要它们。 已经发现使用离子注入的一些处理降低了暴露于大气中的膜的性质的演变。
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